Patents by Inventor Yeonwoong Jung

Yeonwoong Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowire supercapacitors and method of manufacture
    Patent number: 10650982
    Abstract: A method for the fabrication of h-WO3/WS2 core/shell nanowires and their use in flexible supercapacitor applications. The novel nanowire assemblies exhibit multifold advantages desired for high-performance supercapacitors, including superior material properties and electrode design. The material design principle can be extended to other material systems, implying its great potential for a variety of energy storage devices compatible with emerging flexible and wearable technologies.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: May 12, 2020
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Yeonwoong Jung, Nitin Choudhary, Jayan Thomas
  • NANOWIRE SUPERCAPACITORS AND METHOD OF MANUFACTURE
    Publication number: 20180166223
    Abstract: A method for the fabrication of h-WO3/WS2 core/shell nanowires and their use in flexible supercapacitor applications. The novel nanowire assemblies exhibit multifold advantages desired for high-performance supercapacitors, including superior material properties and electrode design. The material design principle can be extended to other material systems, implying its great potential for a variety of energy storage devices compatible with emerging flexible and wearable technologies.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Inventors: Yeonwoong Jung, Nitin Choudhary, Jayan Thomas
  • Phase change memory devices with relaxed stress
    Patent number: 8759810
    Abstract: A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: June 24, 2014
    Assignee: The Trustees Of The University Of Pennsylvania
    Inventors: Ritesh Agarwal, Mukut Mitra, Yeonwoong Jung
  • SYSTEM AND METHOD FOR THE RELAXATION OF STRESS IN PHASE MEMORY DEVICES
    Publication number: 20120273746
    Abstract: A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.
    Type: Application
    Filed: September 24, 2010
    Publication date: November 1, 2012
    Applicant: THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA
    Inventors: Ritesh Agarwal, Mukut Mitra, Yeonwoong Jung