Patents by Inventor Yeou-Sung Lin

Yeou-Sung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210231570
    Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer.
    Type: Application
    Filed: December 28, 2020
    Publication date: July 29, 2021
    Applicant: Industrial Technology Research Institute
    Inventors: Yan-Rung Lin, Chih-Hsiang Liu, Chung-Lun Kuo, Hsiang-Chun Wei, Yeou-Sung Lin, Chieh-Yi Lo
  • Patent number: 9857314
    Abstract: A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: January 2, 2018
    Assignee: Industrial Technology Research Institute
    Inventors: Fu-Cheng Yang, Chia-Liang Yeh, Wei-Hsiung Tsai, Keng-Li Lin, Yeou-Sung Lin, Mao-Sheng Huang