Abstract: Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Abstract: Training chopsticks including a lower chopstick having a longitudinal end, an oppositely longitudinal end, an upper side, a lower side, a lateral side, and an oppositely lateral side; an upper chopstick having an upper side, a lower side, a longitudinal end, an oppositely longitudinal end, a lateral side, and an oppositely lateral side; at least a first arm having proximal and distal ends, the at least first arm's proximal end being fixedly attached to or formed wholly with the lower chopstick; a longitudinally extending slide track fixedly attached to or formed wholly with the upper chopstick; and a pin fixedly attached to or formed wholly with the at least first arm's distal end, the pin operatively engaging the longitudinally extending slide track.

Abstract: Training chopsticks including an upper chopstick having a forward end, a rearward end, an upper side, a lower side, a lateral side, and an oppositely lateral side; a lower chopstick having a forward end, a rearward end, an upper side, a lower side, a lateral side, and an oppositely lateral side; a first finger loop extending upwardly from the upper chopstick; a second finger loop extending downwardly from the upper chopstick; a third finger loop extending downwardly from the lower chopstick; a first slot attaching the first finger loop to the upper chopstick; a second slot attaching the second finger loop to the upper chopstick, the second mounting means positioning the second finger loop forwardly from the first finger loop; and a third slot attaching the third finger loop to the lower chopstick.

Abstract: A method of fabricating a semiconductor device (200) is described. According to a described embodiment, the method comprises: (i) forming a 111-V semiconductor material layer (206) comprising a substrate layer (208) and a device layer (210) attached to the substrate layer (208); and (ii) forming an electrically conductive interlayer (228) to the device layer (210) prior to bonding the electrically conductive interlayer (228) to a partially processed CMOS device layer (204) having at least one transistor (205).

Abstract: A wheeled hand truck incorporating a footplate; a segmented retainer flange; a left pin pivotally mounting a left segment of the retainer flange and allowing sliding flange motion to a clearance elevation; a right pin pivotally mounting a right segment of the retainer flange and allowing sliding flange motion to the clearance elevation; left and right stops extending downwardly from the left and right flange segments; and left and right pairs of sockets positioned for, upon alternative motions of the left and right flange segments toward and away from the clearance elevation, and upon forward and rearward pivoting of the left and right flange segments, alternately holding the left and right flange segments at laterally and forwardly extending positions.

Abstract: Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Abstract: A wheeled hand truck incorporating a footplate; a segmented retainer flange; a left pin pivotally mounting a left segment of the retainer flange and allowing sliding flange motion to a clearance elevation; a right pin pivotally mounting a right segment of the retainer flange and allowing sliding flange motion to the clearance elevation; left and right stops extending downwardly from the left and right flange segments; and left and right pairs of sockets positioned for, upon alternative motions of the left and right flange segments toward and away from the clearance elevation, and upon forward and rearward pivoting of the left and right flange segments, alternately holding the left and right flange segments at laterally and forwardly extending positions.

Abstract: A stopper assembly incorporating an elastic conical body having a forward end and a rearward end; a base attached to the conical body's rearward end; and a pair of sockets opening at the base; and a method for using the stopper assembly including steps of providing the stopper assembly and needle nose pliers; grasping the pliers' handles and splaying pliers' jaws; inserting the nose of each such jaw into one of the sockets; squeezing the pliers' handles for clamping the pair of sockets between the pliers' jaws; moving the pliers, the base, and the elastic conical body toward and into the port; and simultaneously driving and twisting the pliers and the stopper assembly.

Abstract: A turf aerator comprising a foot plate having an upper surface, a lower surface, a front end, a rearward end, a left side, and a right side; at least a first turf coring tine fixedly attached to and extending downwardly from the foot plate; a lever arm fixedly attached to and extending upwardly from the foot plate; and a ground contacting fulcrum fixedly attached to and extending rearwardly from the foot plate.

Abstract: A method and apparatus are described that control the supply of electrical power to one or more components of a computing device. Other embodiments are described and claimed.

Abstract: A method of manufacturing a 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and a dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Abstract: A thin Titanium underlayer 22 is included beneath a Titanium rich Titanium Nitride layer 28 in a metal line 20 on a silicon substrate to reduce stress voiding.

Abstract: A 3-D spiral stacked inductor is provided having a substrate with a plurality of turns in a plurality of levels wherein the number of levels increases from an inner turn to the outer turn of the inductor. First and second connecting portions are respectively connected to an inner turn and an outermost turn, and dielectric material contains the first and second connecting portions and the plurality of turns over the substrate.

Abstract: A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.

Abstract: A turf aerator consisting of a cast concrete roller having an axis of rotation, and having an annular surface displaced radially away from the axis of rotation; first and second radial arrays of tubular tines, each tine among the radial arrays having inner and outer ends, and having soil input and soil output ports; and mounting lug and tine receiving channel combinations attaching the radial arrays of tubular tines to opposite ends of the concrete roller so that the outer ends of such tines extend outwardly from the annular surface of the roller, and so that the inner ends of the tines extend inwardly from the annular surface.

Abstract: A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.

Abstract: A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.

Abstract: A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A first metal layer is deposited over the insulating layer. A capacitor dielectric layer is deposited overlying the first metal layer. A second metal layer is deposited overlying the capacitor dielectric layer and patterned to form a top metal electrode. A flowable material layer is deposited overlying the capacitor dielectric and the top metal electrode and anisotropically etched away to leave spacers on sidewalls of the top metal electrode. A photoresist mask is formed overlying the capacitor dielectric and the top metal electrode wherein the spacers provide extra photoresist thickness at the sidewalls of the top metal layer.