Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a support member which supports a substrate; a treatment liquid discharging member which discharges a treatment liquid containing a monomeric substance to the substrate located in the support member; and a light irradiator which irradiates light to the treatment liquid discharged to the substrate.

Abstract: Disclosed are relate to an apparatus for supplying a cleaning liquid to a substrate. The cleaning liquid supply unit includes a mixing container having a liquid mixing space in the interior thereof, a first supply member configured to supply a first liquid into the liquid mixing space, a second supply member configured to supply a second liquid that is different from the first liquid into the liquid mixing space, and a mixing member configured to mix the first liquid and the second liquid supplied into the liquid mixing space, and the mixing member may include a circulation line, through which the liquids in the liquid mixing space circulate, and a pressure adjusting member configured to provide a pressure to the liquids such that the liquids in the liquid mixing space flows into the circulation line and adjust the pressure.

Abstract: Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating method includes applying a treatment liquid containing a monomeric substance to a substrate that is intended to be cleaned, curing the treatment liquid with a cleaning film by irradiating light to the treatment liquid and polymerizing the monomeric substance, and removing the cleaning film.