Abstract: A solid oxide fuel cell includes an anode layer, an electrolyte layer over a surface of the anode layer, and a cathode layer over a surface of the electrolyte layer. The cathode layer includes a cathode bulk layer, a porous cathode functional layer at an electrolyte, an intermediate cathode layer partitioning the cathode bulk layer and the porous cathode functional layer, the porous intermediate cathode layer having a porosity greater than that of the cathode bulk layer. The solid oxide fuel cells can be combined to form subassemblies that are bonded together to form solid oxide fuel cell assemblies.

Abstract: A solid oxide fuel cell (SOFC) includes a plurality of subassemblies. Each subassembly includes at least one subcell of a first electrode, a second electrode and an electrolyte between the first and second electrodes. A first bonding layer is at the second electrode and an interconnect layer is at the first bonding layer distal to the electrolyte. A second bonding layer that is compositionally distinct from the first bonding layer is at the interconnect layer, whereby the interconnect partitions the first and second bonding layers. A method of fabricating a fuel cell assembly includes co-firing at least two subassemblies using a third bonding layer that is microstructurally or compositionally distinct from the second bonding layer.

Abstract: A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a d50 that is greater than about 1 ?m and a d90 that is greater than about 2 ?m.

Abstract: A solid oxide fuel cell electrolyte is fabricated by combining an yttria-stabilized zirconia powder with ?-Al2O3 having a d50 particle size in a range of between about 10 nm and about 200 nm and Mn2O3 to form an electrolyte precursor composition, and then sintering the electrolyte precursor composition to thereby form the electrolyte. The ?-Al2O3 and Mn2O3 can be present in the electrolyte precursor composition in an amount in a range of between about 0.25 mol % and about 5 mol %. The electrolyte can be a component of a solid oxide fuel cell of the invention.

Abstract: A solid oxide fuel cell includes an anode layer, a cathode layer, and an electrolyte layer partitioning the anode layer and the cathode layer. The anode layer and the cathode layer are of about the same thickness and have about the same coefficient of thermal expansion (CTE).

Abstract: An anisotropic coefficient of thermal expansion (CTE) cathode of a solid oxide fuel cell (SOFC) is formed by placing a layer of perovskite powder between two platens, and sintering the layer while applying pressure to the platens, thereby forming the anisotropic CTE cathode. The perovskite can be lanthanum strontium manganite (LSM).

Abstract: A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns into the outer surface portion, and the skin impurity level is not greater than 80% of the bulk impurity level.

Abstract: A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReAyO1.5+2y, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si1?aGea), 0.25?y?1.2, and 0?a?1.

Abstract: An anisotropic coefficient of thermal expansion (CTE) cathode of a solid oxide fuel cell (SOFC) is formed by placing a layer of perovskite powder between two platens, and sintering the layer while applying pressure to the platens, thereby forming the anisotropic CTE cathode. The perovskite can be lanthanum strontium manganite (LSM).

Abstract: An interconnect material is formed by combining a lanthanum-doped strontium titanate with an aliovalent transition metal to form a precursor composition and sintering the precursor composition to form the interconnect material. The aliovalent transition metal can be an electron-acceptor dopant, such as manganese, cobalt, nickel or iron, or the aliovalent transition metal can be an electron-donor dopant, such as niobium or tungsten. A solid oxide fuel cell, or a strontium titanate varistor, or a strontium titanate capacitor can include the interconnect material that includes a lanthanum-doped strontium titanate that is further doped with an aliovalent transition metal.

Abstract: A solid oxide fuel cell (SOFC) includes a plurality of subassemblies. Each subassembly includes at least one subcell of a first electrode, a second electrode and an electrolyte between the first and second electrodes. A first bonding layer is at the second electrode and an interconnect layer is at the first bonding layer distal to the electrolyte. A second bonding layer that is compositionally distinct from the first bonding layer is at the interconnect layer, whereby the interconnect partitions the first and second bonding layers. A method of fabricating a fuel cell assembly includes co-firing at least two subassemblies using a third bonding layer that is microstructurally or compositionally distinct from the second bonding layer.

Abstract: A solid oxide fuel cell includes an anode layer, an electrolyte layer over a surface of the anode layer, and a cathode layer over a surface of the electrolyte layer. The cathode layer includes a cathode bulk layer, a porous cathode functional layer at an electrolyte, an intermediate cathode layer partitioning the cathode bulk layer and the porous cathode functional layer, the porous intermediate cathode layer having a porosity greater than that of the cathode bulk layer. The solid oxide fuel cells can be combined to form subassemblies that are bonded together to form solid oxide fuel cell assemblies.

Abstract: A solid oxide fuel cell electrolyte is fabricated by combining an yttria-stabilized zirconia powder with ?-Al2O3 having a d50 particle size in a range of between about 10 nm and about 200 nm and Mn2O3 to form an electrolyte precursor composition, and then sintering the electrolyte precursor composition to thereby form the electrolyte. The ?-Al2O3 and Mn2O3 can be present in the electrolyte precursor composition in an amount in a range of between about 0.25 mol % and about 5 mol %. The electrolyte can be a component of a solid oxide fuel cell of the invention.

Abstract: A semiconductor processing component can include SiC, wherein the semiconductor processing component has an impurity ratio less than 34:1. The impurity ratio can be a ratio of a first average impurity concentration to a second impurity level, wherein the first average impurity concentration is an average impurity concentration of a impurity from an exposed surface of the semiconductor processing component to a depth of 0.2 microns from the exposed surface, and the second average impurity concentration is an average impurity concentration of the impurity from a depth of 0.8 microns from the exposed surface to a depth of 1.0 micron from the exposed surface.

Abstract: Methods of forming ceramic components are disclosed. One method calls for chemical vapor depositing a ceramic material over a substrate having first and second opposite surfaces to define a coated structure, the ceramic material forming a layer overlying both the first and second opposite surfaces. The layer and the substrate have a difference in thermal expansion coefficients of at least 0.5 ppm/K. The substrate is removed, leaving behind the layer. Ceramic components and coated structures are also disclosed.

Abstract: A solid oxide fuel cell (SOFC) includes a plurality of sub-cells. Each sub-cell includes a first electrode in fluid communication with a source of oxygen gas, a second electrode in fluid communication with a source of a fuel gas, and a solid electrolyte between the first electrode and the second electrode. The SOFC further includes an interconnect between the sub-cells. The interconnect includes a first layer in contact with the first electrode of each sub-cell, and a second layer in contact with the second electrode of each sub-cell. The first layer includes at least one material selected from the group consisting of a doped M-ferrite based perovskite, a doped M?-ferrite based perovskite, a doped MM?-ferrite based perovskite and a doped M?-chromite based perovskite, wherein M is an alkaline earth metal and M? is a rare earth metal. The second layer includes a doped M?-titanate based perovskite, wherein M? is an alkaline earth metal.

Abstract: A solid oxide fuel cell (SOFC) includes a plurality of sub-cells. Each sub-cell includes a first electrode in fluid communication with a source of oxygen gas, a second electrode in fluid communication with a source of a fuel gas, and a solid electrolyte between the first electrode and the second electrode. The SOFC further includes an interconnect between the sub-cells. In one embodiment, the SOFC has a first surface in contact with the first electrode of each sub-cell and a second surface that is in contact with the second electrode of each sub-cell; and the interconnect consists essentially of a doped M-titanate based perovskite, wherein M is an alkaline earth metal. In another embodiment, the interconnect includes a first layer in contact with the first electrode of each sub-cell, and a second layer in contact with the second electrode of each sub-cell. The first layer includes an electrically conductive material selected from the group consisting of an metal, a metal alloy and a mixture thereof.

Abstract: A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level.

Abstract: A high purity ceramic article having a typical pore size of at least about 15 ?m and an active impurity concentration of less than about 400 ppm can be prepared by molding ceramic powder, sintering to vaporize any active impurity components, washing to dissolve any remaining active impurity components with an acid solution, and oxidizing to remove any residual active impurity components.

Abstract: A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReAyO1.5+2y, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si1?aGea), 0.25?y?1.2, and 0?a?1.