Patents by Inventor Yeu-wei Harn

Yeu-wei Harn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11139371
    Abstract: A two-dimensional (2D) semiconductor with geometry structure and generating method thereof is disclosed herein and the method includes following steps: forming a nano-layer; disposing a 2D material on a substrate; forming a medium layer on the 2D material; transferring the medium layer and the 2D material to the nano-layer; removing the medium layer and leaving the 2D material on a surface of the nano-layer. In accordance with the generating method for 2D semiconductor with geometry structure, a nano microstructure is implemented to enhance and control the 2D materials for field emission and photon emission efficiency.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: October 5, 2021
    Assignee: National Tsing Hua University
    Inventors: Tung-han Yang, Yeu-wei Harn, Xin-quan Zhang, I-tung Chen, Yi-hsien Lee
  • Publication number: 20200111868
    Abstract: A two-dimensional (2D) semiconductor with geometry structure and generating method thereof is disclosed herein and the method includes following steps: forming a nano-layer; disposing a 2D material on a substrate; forming a medium layer on the 2D material; transferring the medium layer and the 2D material to the nano-layer; removing the medium layer and leaving the 2D material on a surface of the nano-layer. In accordance with the generating method for 2D semiconductor with geometry structure, a nano microstructure is implemented to enhance and control the 2D materials for field emission and photon emission efficiency.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Inventors: Tung-han Yang, Yeu-wei Harn, Xin-quan Zhang, I-tung Chen, Yi-hsien Lee