Patents by Inventor Yeuk-Fai Edwin Mok
Yeuk-Fai Edwin Mok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7311810Abstract: Embodiments of the invention generally provide an annealing apparatus and method for a semiconductor processing platform. The annealing apparatus includes a plurality of isolated annealing chambers, wherein each of the annealing chambers has a heating plate positioned in a sealed processing volume, a cooling plate positioned in the processing volume, and a substrate transfer mechanism positioned in the processing volume and configured to transfer substrates between the heating plate and the cooling plate. The annealing system further includes a gas supply source selectively in communication with each of the individual annealing chambers.Type: GrantFiled: April 13, 2004Date of Patent: December 25, 2007Assignee: Applied Materials, Inc.Inventors: Yeuk-Fai Edwin Mok, Son T. Nguyen
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Patent number: 7223323Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.Type: GrantFiled: July 8, 2003Date of Patent: May 29, 2007Assignee: Applied Materials, Inc.Inventors: Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher, Bernardo Donoso, Lily L. Pang, Svetlana Sherman, Henry Ho, Anh N. Nguyen, Alexander N. Lerner, Allen L. D'Ambra, Arulkumar Shanmugasundram, Tetsuya Ishikawa, Yevgeniy Rabinovich, Dmitry Lubomirsky, Yeuk-Fai Edwin Mok, Son T. Nguyen
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Patent number: 7138014Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.Type: GrantFiled: January 28, 2002Date of Patent: November 21, 2006Assignee: Applied Materials, Inc.Inventors: Joseph J. Stevens, Dmitry Lubomirsky, Ian Pancham, Donald J. K. Olgado, Howard E. Grunes, Yeuk-Fai Edwin Mok
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Patent number: 6869516Abstract: A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.Type: GrantFiled: October 18, 2002Date of Patent: March 22, 2005Assignee: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Michael X. Yang, Girish A. Dixit, Vincent E. Burkhart, Allen L. D'Ambra, Yeuk-Fai Edwin Mok, Harald Herchen
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Patent number: 6824612Abstract: A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.Type: GrantFiled: December 26, 2001Date of Patent: November 30, 2004Assignee: Applied Materials, Inc.Inventors: Joseph J. Stevens, Dmitry Lubomirsky, Ian Pancham, Donald J. Olgado, Howard E. Grunes, Yeuk-Fai Edwin Mok, Girish Dixit
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Publication number: 20040209414Abstract: Embodiments of the invention generally provide an annealing apparatus and method for a semiconductor processing platform. The annealing apparatus includes a plurality of isolated annealing chambers, wherein each of the annealing chambers has a heating plate positioned in a sealed processing volume, a cooling plate positioned in the processing volume, and a substrate transfer mechanism positioned in the processing volume and configured to transfer substrates between the heating plate and the cooling plate. The annealing system further includes a gas supply source selectively in communication with each of the individual annealing chambers.Type: ApplicationFiled: April 13, 2004Publication date: October 21, 2004Applicant: Applied Materials, Inc.Inventors: Yeuk-Fai Edwin Mok, Son T. Nguyen
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Publication number: 20040074777Abstract: A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.Type: ApplicationFiled: October 18, 2002Publication date: April 22, 2004Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Michael X. Yang, Girish A. Dixit, Vincent E. Burkhart, Allen L. D'Ambra, Yeuk-Fai Edwin Mok, Harald Herchen
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Patent number: 6689418Abstract: An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed.Type: GrantFiled: August 3, 2001Date of Patent: February 10, 2004Assignee: Applied Materials Inc.Inventors: Donald J. K. Olgado, Avi Tepman, Yeuk-Fai Edwin Mok, Arnold V. Kholodenko
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Publication number: 20040016637Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.Type: ApplicationFiled: July 8, 2003Publication date: January 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Michael X. Yang, Ming Xi, Russell C. Ellwanger, Eric B. Britcher, Bernardo Donoso, Lily L. Pang, Svetlana Sherman, Henry Ho, Anh N. Nguyen, Alexander N. Lerner, Allen L. D'Ambra, Arulkumar Shanmugasundram, Tetsuya Ishikawa, Yevgeniy Rabinovich, Dmitry Lubomirsky, Yeuk-Fai Edwin Mok, Son T. Nguyen
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Publication number: 20030213772Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.Type: ApplicationFiled: February 16, 2001Publication date: November 20, 2003Inventors: Yeuk-Fai Edwin Mok, Alexander Ko, Bernardo Donoso, Joseph J. Stevens
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Publication number: 20030141018Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.Type: ApplicationFiled: January 28, 2002Publication date: July 31, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Joseph J. Stevens, Dmitry Lubomirsky, Ian Pancham, Donald J. K. Olgado, Howard E. Grunes, Yeuk-Fai Edwin Mok
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Publication number: 20030118732Abstract: A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.Type: ApplicationFiled: December 26, 2001Publication date: June 26, 2003Inventors: Joseph J. Stevens, Dmitry Lubomirsky, Ian Pancham, Donald J. Olgado, Howard E. Grunes, Yeuk-Fai Edwin Mok, Girish Dixit
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Patent number: 6537011Abstract: A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.Type: GrantFiled: July 31, 2000Date of Patent: March 25, 2003Assignee: Applied Materials, Inc.Inventors: Danny Wang, Dmitry Lubomirsky, Erwin Polar, Brigitte Stoehr, Mark Wiltse, Yeuk-Fai Edwin Mok, Frank C. Ma
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Publication number: 20030034617Abstract: A wafer chuck is provided, having a wafer chucking surface, and a plunger consisting either of a body that extends at least partially along the outer perimeter of the wafer chucking surface, or a plurality of pins positioned outside the wafer chucking surface. The plunger may be normally biased to extend past the wafer chucking surface and/or may be adapted not to rotate with the wafer chucking surface. The plunger bias may be achieved via one or more vacuum bellows.Type: ApplicationFiled: August 13, 2002Publication date: February 20, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Bernardo Donoso, Yeuk-Fai Edwin Mok
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Patent number: 6516815Abstract: The present invention provides an apparatus for etching a substrate, comprising: a container; a substrate support disposed in the container; a rotation actuator attached to the substrate support; and a fluid delivery assembly disposed in the container to deliver an etchant to a peripheral portion of a substrate disposed on the substrate support. Preferably, the substrate support comprises a vacuum chuck and the fluid delivery assembly comprises one or more nozzles. The invention also provide a method for etching a substrate, comprising: rotating a substrate positioned on a rotatable substrate support; and delivering an etchant to a peripheral portion of the substrate. Preferably, the substrate is rotated at between about 100 rpm and about 1000 rpm, and the etchant is delivered in a direction that is substantially tangent to the peripheral portion of the substrate at an incident angle between about 0 degrees and about 45 degrees from a surface of substrate.Type: GrantFiled: July 9, 1999Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: Joe Stevens, Donald Olgado, Alex Ko, Yeuk-Fai Edwin Mok
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Publication number: 20030024557Abstract: An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed.Type: ApplicationFiled: August 3, 2001Publication date: February 6, 2003Inventors: Donald J.K. Olgado, Avi Tepman, Yeuk-Fai Edwin Mok, Arnold V. Kholodenko
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Patent number: 6466426Abstract: A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.Type: GrantFiled: August 3, 1999Date of Patent: October 15, 2002Assignee: Applied Materials Inc.Inventors: Yeuk-Fai Edwin Mok, Dmitry Lubomirsky, Dennis Koosau, Danny Wang, Senh Thach, Paul Exline
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Publication number: 20020113039Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.Type: ApplicationFiled: February 16, 2001Publication date: August 22, 2002Inventors: Yeuk-Fai Edwin Mok, Alexander Ko, Bernardo Donoso, Joseph J. Stevens
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Patent number: 6178920Abstract: The present invention employs an internal inductive antenna capable of generating a helicon wave for generating a plasma. One embodiment of the present invention employs loop type antenna secured within a bell shaped portion of the chamber. Another embodiment employs a flat coil type antenna secured within the chamber. In the preferred embodiments, the internal antenna of the present invention is constructed to prevent sputtering of the antenna. The antenna may be formed of a non-sputtering conductive material, or may formed a conductive material surrounded, completely or partially, by a non-sputtering jacket. In one embodiment, the non-sputtering jacket may be coupled to the chamber wall so that heat generated by the antenna is transferred between the jacket and the chamber wall by conduction. Preferably, the non-sputtering jacket is formed of a material that also is electrically insulative with the surface of the antenna exposed to plasma being segmented to inhibit eddy current in conductive deposits.Type: GrantFiled: June 18, 1999Date of Patent: January 30, 2001Assignee: Applied Materials, Inc.Inventors: Yan Ye, Allan D'Ambra, Yeuk-Fai Edwin Mok, Richard E. Remington, James E. Sammons, III
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Patent number: 6158384Abstract: The present invention employs a plurality of small inductive antennas to generate a processing plasma. In one embodiment, small coil antennas are secured within the chamber so that both of the pole regions of the antennas couple power to the plasma. The antennas may be oriented so that poles regions are anywhere from perpendicular, to parallel to a chamber wall. The number, location, and orientation of the small antennas within the chamber may be selected to optimize plasma characteristics. In addition, the antennas may be secured to top, side, or bottom walls to improve plasma characteristics; and power deposition within the processing chamber may be adjusted by changing the orientation of the coils, and the magnitude and phase relationship of RF power through the individual antennas. Process gas may be selectively delivered to areas of high power deposition such as adjacent pole regions or through the center of a coil or loop antenna to control plasma characteristics.Type: GrantFiled: June 18, 1999Date of Patent: December 12, 2000Assignee: Applied Materials, Inc.Inventors: Yan Ye, Allan D'Ambra, Yeuk-Fai Edwin Mok, Richard E. Remmington, James E. Sammons, III