Abstract: A bipolar transistor includes an emitter, a base, a collector, an additional base semiconductor region having the same conductivity type as the base, arranged at the emitter and constituting a connection with the emitter. A first electrical connection connects the additional base semiconductor region with the base, thereby short-circuiting the additional base semiconductor region relative to the base, such that the additional base semiconductor region and base together constitute a combined base of the transistor. A further semiconducting collector region has the same conductivity type as the collector. A second electrical connection connects the further semiconductor connecting region and the collector, thereby short-circuiting the further semiconducting collector region and the collector, such that the additional semiconducting collector region and the collector together constitute a combined collector of the transistor.