Patents by Inventor Yevgeny V. Anoikin

Yevgeny V. Anoikin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130003521
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media.
    Type: Application
    Filed: September 10, 2012
    Publication date: January 3, 2013
    Applicant: INTEL CORPORATION
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Patent number: 8264941
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.
    Type: Grant
    Filed: December 26, 2007
    Date of Patent: September 11, 2012
    Assignee: Intel Corporation
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Patent number: 7738350
    Abstract: According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: June 15, 2010
    Assignee: Intel Corporation
    Inventors: Donald Adams, Yevgeny V. Anoikin, Byong M. Kim
  • Publication number: 20100100991
    Abstract: A device to detect polarization of a ferroelectric material comprises a probe tip, a charge amplifier electrically connected with the probe tip to convert a charge coupled to the probe tip from the ferroelectric material into an output voltage. The ferroelectric material is oscillated at a reference signal so that a charge is coupled to the probe tip and converted to an output voltage by the charge amplifier. A lock-in amplifier that receives the reference voltage and applies the reference voltage to the output voltage to extract a signal output representing the polarization.
    Type: Application
    Filed: October 20, 2008
    Publication date: April 22, 2010
    Applicant: NANOCHIP, INC.
    Inventors: Byong M. Kim, Robert N. Stark, Quan Tran, Wade Hassler, Qing Ma, Donald E. Adams, Yevgeny V. Anoikin
  • Publication number: 20100002563
    Abstract: A media for storing information comprises a substrate, a conductive layer formed over the substrate, and a ferroelectric layer epitaxially formed on the conductive layer. The ferroelectric layer includes an a-lattice constant that is substantially matched to an a-lattice constant of the conductive layer and an average c-lattice constant that is longer than an average c-lattice constant of a bulk-grown ferroelectric layer.
    Type: Application
    Filed: July 1, 2008
    Publication date: January 7, 2010
    Applicant: NANOCHIP, INC.
    Inventors: Byong M. Kim, Jingwei Li, Pu Yu, Donald E. Adams, Ying-Hao Chu, Yevgeny V. Anoikin, Ramamoorthy Ramesh, Li-Peng Wang
  • Publication number: 20090168637
    Abstract: An arrangement, a method and a system to read information stored in a layer of ferroelectric media.
    Type: Application
    Filed: December 26, 2007
    Publication date: July 2, 2009
    Inventors: Quan Anh Tran, Byong M. Kim, Robert N. Stark, Nathan R. Franklin, Qing Ma, Valluri Rao, Donald E. Adams, Li-Peng Wang, Yevgeny V. Anoikin
  • Publication number: 20080318086
    Abstract: A system for storing information comprises a media including a ferroelectric layer and a passivation layer formed over the ferroelectric layer, and a tip arranged in approximate contact with the passivation layer. The tip detects a polarization signal that corresponds to changes in polarization of domains of the ferroelectric layer.
    Type: Application
    Filed: June 19, 2007
    Publication date: December 25, 2008
    Applicant: NANOCHIP, INC.
    Inventors: Byong Man Kim, Donald Edward Adams, Brett Eldon Huff, Yevgeny V. Anoikin, Robert N. Stark
  • Publication number: 20080316897
    Abstract: A method of forming a passivation layer over a ferroelectric layer of a ferroelectric media comprises introducing the ferroelectric layer to a plasma comprising one of oxygen, oxygen-helium, and oxygen-nitrogen-helium, etching a surface of the ferroelectric layer, forming one of a substantially oxygen enriched layer and a substantially hydroxyl enriched layer at the surface of the ferroelectric layer, introducing the ferroelectric layer to an environment comprising substantially nitrogen, and maintaining the ferroelectric layer within the environment so that nitrogen enriches the substantially oxygen enriched layer to form a passivation layer.
    Type: Application
    Filed: June 19, 2007
    Publication date: December 25, 2008
    Applicant: NANOCHIP, INC.
    Inventors: Byong Man KIM, Donald Edward ADAMS, Brett Eldon HUFF, Yevgeny V. ANOIKIN, Robert N. STARK
  • Publication number: 20080219133
    Abstract: According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
    Type: Application
    Filed: March 5, 2007
    Publication date: September 11, 2008
    Inventors: Donald Adams, Yevgeny V. Anoikin, Byong M. Kim