Patents by Inventor YewChung Sermon Wu
YewChung Sermon Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8906778Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.Type: GrantFiled: June 17, 2011Date of Patent: December 9, 2014Assignee: National Chiao Tung UniversityInventors: YewChung Sermon Wu, Bau-Ming Wang, Feng-Ching Hsiao
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Patent number: 8796071Abstract: The present invention related to a method for manufacturing a thermal dissipation substrate and a thermal dissipation substrate. The method includes steps of: (a) providing a substrate body having a surface; (b) forming a plurality of concave regions on the surface; and (c) filling the plurality of concave regions with a plurality of diamond materials. The thermal dissipation substrate includes: a substrate having a surface at a first horizontal; a plurality of regions formed on the surface at a second horizontal; and a plurality of diamond materials having a relatively high thermal coefficient and disposed on the plurality of regions.Type: GrantFiled: July 13, 2012Date of Patent: August 5, 2014Assignee: National Chiao Tung UniversityInventors: YewChung Sermon Wu, Tai-Min Chang, Yu Chia Chiu, Jen-Li Hu
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Publication number: 20130001752Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.Type: ApplicationFiled: March 8, 2012Publication date: January 3, 2013Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: YewChung Sermon Wu, Yu-Chung Chen
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Publication number: 20120273803Abstract: The present invention related to a method for manufacturing a thermal dissipation substrate and a thermal dissipation substrate. The method includes steps of: (a) providing a substrate body having a surface; (b) forming a plurality of concave regions on the surface; and (c) filling the plurality of concave regions with a plurality of diamond materials. The thermal dissipation substrate includes: a substrate having a surface at a first horizontal; a plurality of regions formed on the surface at a second horizontal; and a plurality of diamond materials having a relatively high thermal coefficient and disposed on the plurality of regions.Type: ApplicationFiled: July 13, 2012Publication date: November 1, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: YewChung Sermon Wu, Tai-Min Chang, Yu Chia Chiu, Jen-Li Hu
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Publication number: 20120231614Abstract: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.Type: ApplicationFiled: June 17, 2011Publication date: September 13, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: YewChung Sermon Wu, Bau-Ming Wang, Feng-Ching Hsiao
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Patent number: 7629209Abstract: A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.Type: GrantFiled: October 17, 2005Date of Patent: December 8, 2009Assignee: Chunghwa Picture Tubes, Ltd.Inventors: YewChung Sermon Wu, Chih-Yuan Hou, Guo-Ren Hu, Po-Chih Liu
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Patent number: 7455885Abstract: Manufacturing methods of using a metal imprint technique for growing carbon nanotubes on selective areas and the structures formed thereof are provided. One of the manufacturing methods includes steps of forming a first substrate with tapered structures applied with a metal catalyst, imprinting a second substrate on the first substrate for being a growth substrate, and growing carbon nanotubes on the growth substrate. The other manufacturing method includes steps of forming a first substrate with tapered structures, imprinting the first substrate on a second substrate applied with a metal catalyst for forming a second growth substrate, and growing carbon nanotubes on the second grown substrate. And, the formed structures of the present invention include a substrate, plural carbon nanotubes, and plural imprinted vestiges.Type: GrantFiled: April 11, 2006Date of Patent: November 25, 2008Assignee: National Chiao Tung UniversityInventors: YewChung Sermon Wu, Chi Wei Chao, Chih Yuan Hou
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Publication number: 20080116461Abstract: A manufacturing method of a semiconductor device, includes the following steps: providing a substrate with an insulated surface; forming an amorphous silicon layer on the insulated surface; imposing a catalytic metal element on the amorphous silicon layer; heating and catalyzing the amorphous silicon layer to form a poly-silicon layer; forming a diffusion layer and a gettering material layer on the poly-silicon layer in order; proceeding an annealing process on the gettering material layer and the poly-silicon layer to move the residual metal catalyst element from the poly-silicon layer toward the gettering material layer due to the concentration gradient; and removing the diffusion layer and the gettering material layer.Type: ApplicationFiled: June 19, 2007Publication date: May 22, 2008Inventors: YewChung-Sermon Wu, Chih-Yuan Hou, Chi-Ching Lin, Guo-Ren Hu
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Publication number: 20070087485Abstract: A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Inventors: YewChung Sermon Wu, Chih-Yuan Hou, Guo-Ren Hu, Po-Chih Liu
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Patent number: 6686257Abstract: A method for transferring an epitaxy layer is provided. The method includes steps of (a) providing a first substrate, (b) forming a first epitaxy layer on the first substrate, (c) forming a masking layer having at least a pattern on the first epitaxy layer, (d) forming a second epitaxy layer on the masking layer, (e) bonding a second substrate to the second epitaxy layer, and (f) removing the masking layer and separating the second epitaxy layer from the first epitaxy layer, thereby the second epitaxy layer being transferred to the second substrate.Type: GrantFiled: October 4, 2002Date of Patent: February 3, 2004Assignee: National Chiao Tung UniversityInventors: YewChung Sermon Wu, PeiYan Lin
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Publication number: 20040014297Abstract: A method for transferring an epitaxy layer is provided. The method includes steps of (a) providing a first substrate, (b) forming a first epitaxy layer on the first substrate, (c) forming a masking layer having at least a pattern on the first epitaxy layer, (d) forming a second epitaxy layer on the masking layer, (e) bonding a second substrate to the second epitaxy layer, and (f) removing the masking layer and separating the second epitaxy layer from the first epitaxy layer, thereby the second epitaxy layer being transferred to the second substrate.Type: ApplicationFiled: October 4, 2002Publication date: January 22, 2004Applicant: National Chiao Tung UniversityInventors: YewChung Sermon Wu, PeiYan Lin