Patents by Inventor Yew Heng Tan

Yew Heng Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a germanium-on-insulator substrate
    Patent number: 10049916
    Abstract: A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing (102) a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding (102) the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing (104) the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing (106) the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: August 14, 2018
    Assignees: Massachusetts Institute of Technology, Nanyang Technological University
    Inventors: Kwang Hong Lee, Chuan Seng Tan, Yew Heng Tan, Gang Yih Chong, Eugene A. Fitzgerald, Shuyu Bao
  • METHOD OF MANUFACTURING A GERMANIUM-ON-INSULATOR SUBSTRATE
    Publication number: 20170271201
    Abstract: A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing (102) a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding (102) the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing (104) the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing (106) the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.
    Type: Application
    Filed: May 22, 2015
    Publication date: September 21, 2017
    Applicants: Massachusetts Institute of Technology, Nanyang Technological University
    Inventors: Kwang Hong Lee, Chuan Seng Tan, Yew Heng Tan, Gang Yih Chong, Eugene A. Fitzgerald, Shuyu Bao