Abstract: Aspects are provided which allow a UE to provide a CSI report including an expiration time to a base station to reduce the risk of improper scheduling decisions at the base station based on outdated CSI reports. The UE obtains a channel measurement signal from the base station. The UE identifies CSI based on the channel measurement signal and provides a CSI report to the base station including the CSI. The CSI report further includes an expiration time for the CSI report. The base station obtains the CSI report from the UE including the expiration time for the CSI report, and the base station processes downlink data for transmission based on the expiration time in the CSI report.

Abstract: Methods, systems, and devices for wireless communications are described. A network node may transmit a message to a user equipment (UE) indicating at least a first frequency range for uplink data and a second frequency range for the uplink data. The UE may apply a frequency offset for at least one of the first frequency range or the second frequency range based at least in part on the first frequency range, the second frequency range, or both, overlapping with a downlink portion of a sub band full duplex duration. The UE may transmit, during a first portion of the sub band full duplex duration, the uplink data in the first frequency range, the second frequency range, or a third frequency range based at least in part on applying the frequency offset for at least one of the first frequency range or the second frequency range.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive an indication of a first subset size parameter associated with a first priority, and an indication of a second subset size parameter associated with a second priority. The UE may determine a first set of HARQ-ACK/NACK feedback associated with downlink communications having the first priority and a second set of HARQ-ACK/NACK feedback associated with downlink communications having the second priority. The UE may select a first subset of HARQ-ACK/NACK feedback from the first set of HARQ-ACK/NACK feedback based on the first subset size parameter, and a second subset of HARQ-ACK/NACK feedback from the second set of HARQ-ACK/NACK feedback based on the second subset size parameter. The UE may transmit, during the uplink slot, the first subset and/or the second subset of HARQ-ACK/NACK feedback. Numerous other aspects are provided.

Abstract: Coronavirus Disease 2019 (COVID-19) remains a threat with the emergence of new variants, especially Delta and Omicron, without specific effective therapeutic drugs. The present invention provides a method and a composition for preventing and treating COVID-19 (SARS-CoV-2) coronavirus infection which includes administering to a subject in need thereof one or more therapeutically effective doses of Virofree which comprises a pharmaceutically acceptable combination of grape seed extract, acerola cherry extract, olive leaf extract, marigold extract, green tea extract, pomegranate extract, yeast beta-glucan and soya bean extract for a treatment period.

Abstract: Aspects described herein relate to receiving, from a base station, an uplink resource grant for transmitting uplink control information, where the uplink resource grant indicates an uplink control information format, bundling a number of instances of feedback in a number of feedback bits, where the number of feedback bits corresponds to the uplink control information format, and where the number of instances of feedback correspond to SPS downlink communications, and transmitting, to the base station and in the uplink control information, the number of feedback bits. Other aspects relate to transmitting the uplink resource grant, and receiving uplink control information based on the indicated uplink control information format.

Abstract: A semiconductor structure according to the present disclosure includes a conductive feature in a top portion of a substrate, a bottom electrode layer over and in electrical coupling with the conductive feature, an insulator layer over the bottom electrode layer, a semiconductor layer over the insulator layer, a ferroelectric layer over the semiconductor layer, and a top electrode layer over the ferroelectric layer. The semiconductor layer includes a plurality of portions with different thicknesses.

Abstract: A computing system with graphics processor boosting is shown. The computing system has a graphics processing unit controlling a display, a code memory storing instructions, and a processor operating the graphics processing unit to control the display. The processor is configured to execute the instructions retrieved from the code memory to implement a plurality of graphics processor boosting modules for the graphics processing unit, and implement an activation controller that controls activation of the different graphics processor boosting modules through different configuration interfaces with balances between the different graphics processor boosting modules.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.

Abstract: A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

Abstract: A tiller including a walking element configured to move the tiller, a tine rotatable about a rotational axis; a first motor configured to drive the walking clement to move the tiller, and a counterweight, wherein the tine is disposed on a first side of the tiller and wherein the counterweight is disposed on a second side of the tiller opposite the first side.

Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.

Abstract: A method for performing automatic activation control regarding VRS and associated apparatus are provided. The method applicable to a processing circuit may include: utilizing a rendering classifier to intercept at least one set of original graphic commands on a command path to obtain at least one rendering property, for classifying rendering corresponding to the at least one set of original graphic commands; utilizing the rendering classifier to classify the rendering into at least one predetermined rendering type among multiple predetermined rendering types according to the at least one rendering property, in order to determine at least one shading rate corresponding to the at least one predetermined rendering type for the rendering; and utilizing a shading rate controller to control the processing circuit to selectively activate a VRS function of the processing circuit, for rendering at the at least one shading rate corresponding to the at least one predetermined rendering type.

Abstract: The present invention relates to Ras inhibitors and to methods for preparing Ras inhibitors.

Abstract: The present disclosure provides bispecific binding proteins and fragments thereof which bind to human CD137 and a tumor associated antigen (e.g., Claudin-6, Claudin 18.2, or Nectin-4), to polynucleotide sequences encoding these antibodies and to cells producing them. The disclosure further relates to therapeutic compositions comprising these antibodies, and to methods of their use for cancer detection, prognosis and antibody-based immunotherapy.

Abstract: Polyvinyl alcohol (PVA) gel and polyurethane (PU)ZPVA gel and gel beads, methods for making gel and gel beads with immobilized substances such as microorganisms, cells, enzymes, and/or other materials, methods for using gel and gel beads in various applications (e.g., wastewater treatment), and apparatus for manufacturing such gel and gel beads, are described.

Abstract: A conductive film includes a substrate and a first metal nanowire layer. The first metal nanowire layer is disposed on a first surface of the substrate. The first metal nanowire layer has an anisotropy value larger than or equal to 2.8 and smaller than or equal to 4.0.

Abstract: Described herein is a temperature sensing module for determining and adjusting temperature of dual inline memory module (DIMM) of an information handling system. The temperature sensing module includes a flexible printed circuit (FPC) and a temperature sensor integrated into the FPC. The temperature sensor is configured to contact and receive temperature the DIMM. The received temperature is used to adjust temperature of the DIM by heating a heating pad. Fasteners are to connect the temperature sensing module to the DIMM.

Abstract: A method for collecting residues of curable material includes: performing a curing process on a semiconductor wafer in a chamber, where the semiconductor wafer is held by a wafer cassette, and residues of curable material is formed in the chamber; and collecting the residues of curable material. A first portion of the residues dripping from a ceiling of the chamber is directed toward a tray using a flow-directing structure, where the flow-directing structure is below the ceiling of the chamber, the flow-directing structure includes a central opening and a slanted surface sloped to direct the first portion of the residues toward the central opening. The first portion of the residues is collected on a collecting surface of the tray which covers the central opening of the flow-directing structure.

Abstract: A conductive film includes a substrate and a first metal nanowire layer. The first metal nanowire layer is disposed on a first surface of the substrate. The first metal nanowire layer has an anisotropy value larger than or equal to 2.8 and smaller than or equal to 4.0.