Abstract: A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect.

Abstract: A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect).

Abstract: A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.

Abstract: A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first and the second LED device are formed on a common substrate and are separated by a gap. At least one polymer material substantially fills the gap. An interconnect, formed on top of the at least one polymer material, electrically connects the first electrode and the second electrode.

Abstract: A method for forming a light-emitting-diode (LED) array is disclosed includes forming an LED structure on a substrate. The LED structure is divided into at least a first LED device and a second LED device with a gap between the first LED device and the second LED device. At least one polymer material is deposited over the LED structure to substantially fill the gap with the at least one polymer material. Portions of the at least one polymer material are removed to expose a first electrode of the first LED device and a second electrode of the second LED device. An interconnect is formed on top of the at least one polymer material electrically connecting the first and second electrode.

Abstract: A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.

Abstract: A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode.

Abstract: A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode.

Abstract: The present invention provides compositions of protein mimetics and methods of using same against HIV-1, SARS-coV and the like. In one aspect, the present invention relates to a protein mimetic for preventing HIV-1 entry to host cells of a living subject through membrane fusion, wherein HIV-1 contains at least one envelope glycoprotein gp41 that has a plurality of peptides in a pre-hairpin state. In one embodiment, the protein mimetic comprises at least two monomeric peptide strands and an interstrand linker coupling the monomeric peptide strands. The coupled monomeric peptide strands prevent the plurality of trimeric gp41 in a pre-hairpin state from transiting to a six-helix hairpin bundle, thereby inhibiting HIV-1 entry to the host cells through membrane fusion.