Abstract: An OLED including an anode, a cathode, and an organic layer between the anode and the cathode, where the organic layer includes a compound having the formula [LA]3-nIr[LB]n is disclosed.

Abstract: Disclosed is a device that includes an emissive material or region including a host that is doped with a first material as an emitter that is an acceptor and a phosphorescent-capable second material as a sensitizer. The first material and the second material each has a first singlet state and a first triplet state. The first triplet state of the second material is not lower than the first triplet state of the first material. The second material transfers excitons to the first material and the excitons that transition to the first triplet state of the first material can be activated to the first singlet state of the first material through a thermal activation process.

Abstract: Provided are organometallic compounds including a ligand LA having a structure of Also provided are formulations comprising these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: Provided are organometallic compounds comprising a ligand which is at least a two-dentate ligand which comprises at least one 5-membered nitrogen containing heterocyclic ring, the nitrogen of which is bonded to the central metal atom. Also provided are formulations comprising these organometallic compounds. Further provided are organic light emitting devices (OLEDs) and related consumer products that utilize these organometallic compounds.

Abstract: Provided are multicyclic organic electroluminescent compounds having a ligand LA of Formula I shown below: Also provided are OLEDs and related consumer products that contain an organic layer having these organic electroluminescent compounds.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A moisture-absorbing dry electrode and smart clothing. The moisture-absorbing dry electrode includes a substrate and a moisture-absorbing electrode. The substrate has a surface. The moisture-absorbing electrode includes at least one moisture-absorbing conductive film, and the moisture-absorbing conductive film is used to absorb moisture and disposed on the surface of the substrate. The material of the moisture-absorbing conductive film includes a uniform mixture of carbon paste, a moisture-absorbing material and a cross-linking agent, and the moisture-absorbing material includes a nanomaterial or an inorganic adsorbent material, or a combination thereof.

Abstract: In an embodiment, a device includes: an interposer including: a back-side redistribution structure; an interconnection die over the back-side redistribution structure, the interconnection die including a substrate, a through-substrate via protruding from the substrate, and an isolation layer around the through-substrate via; a first encapsulant around the interconnection die, a surface of the first encapsulant being substantially coplanar with a surface of the isolation layer and a surface of the through-substrate via; and a front-side redistribution structure over the first encapsulant, the front-side redistribution structure including a first conductive via that physically contacts the through-substrate via, the isolation layer separating the first conductive via from the substrate.

Abstract: Organic light emitting materials and devices comprising phosphorescent metal complexes comprising ligands comprising aryl or heteroaryl groups substituted at both ortho positions are described. An organic light emitting device, comprising: an anode, a hole transport layer; an organic emissive layer comprising an emissive layer host and an emissive dopant; an electron impeding layer; and electron transport layer, and a cathode disposed, in that order, over a substrate.

Abstract: Provided are organometallic compounds having a structure of Formula I: Also provided are formulations comprising these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: Provided are organometallic compounds comprising a ligand comprising at least two moieties A and B which are linked by a linking group L2, wherein the ligand is coordinated to a central metal atom M. Also provided are formulations comprising these organometallic compounds. Further provided are organic light emitting devices (OLEDs) and related consumer products that utilize these organometallic compounds.

Abstract: A compound is disclosed that has a metal coordination complex structure having at least two ligands coordinated to the metal; wherein the compound has a first substituent R1 at one of the ligands' periphery; wherein a first distance is defined as the distance between the metal and one of the atoms in R1 where that atom is the farthest away from the metal among the atoms in R1; wherein the first distance is also longer than any other atom-to-metal distance between the metal and any other atoms in the compound; and wherein when a sphere having a radius r is defined whose center is at the metal and the radius r is the smallest radius that will allow the sphere to enclose all atoms in the compound that are not part of R1, the first distance is longer than the radius r by at least 2.9 ?.

Abstract: A compound comprising a first ligand LA of Formula I, is provided. In Formula I, each of moieties A, B, C, and D are a monocyclic ring or a polycyclic fused ring system; Z is N, P, B, CR, SiR, or GeR; each of Z1 to Z10 is independently C or N; each of K1 and K2 is a direct bond or a linker; each R, RA, RB, RC, RD, R?, and R? is hydrogen or a General Substituent defined herein; and any two substituents may be joined or fused to form a ring. Formulations, OLEDs, and consumer products containing the same are also provided.

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a bottom package having a first sidewall and a second sidewall opposite to each other; a hybrid path layer disposed on the bottom package, wherein the hybrid path layer comprises an optical path layer and an electrical path layer, and at least one optical path of the optical path layer extends from the first sidewall of the bottom package beyond a center of the bottom package; and a plurality of dies bonded onto the hybrid path layer.

Abstract: The present disclosure provides a chemical solution preparation system and method. The chemical solution preparation system includes: a first mixing system, configured to mix a first chemical solution and a first diluent to obtain a first mixture; a second mixing system, configured to mix a second chemical solution and a second diluent to obtain a second mixture; a third mixing system, configured to mix the first mixture, the second mixture, and a third diluent to obtain a third mixture; an output system, configured to output the third mixture to a spray apparatus of the chemical mechanical polishing device; a sampling system, configured to collect a sample of the third mixture output from the output system; and a monitoring system, configured to monitor a status of the first mixture, a status of the second mixture, and a status of the third mixture.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via.

Abstract: A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.

Abstract: A semiconductor package includes an encapsulated semiconductor device, a backside redistribution structure, and a front side redistribution structure. The encapsulated semiconductor device includes an encapsulating material and a semiconductor device encapsulated by the encapsulating material. The backside redistribution structure is disposed on a backside of the encapsulated semiconductor device and includes a redistribution circuit layer and a first patterned dielectric layer. The redistribution circuit layer has a circuit pattern and a dummy pattern electrically insulated from the circuit pattern. The dummy pattern is overlapped with the semiconductor device from a top view of the semiconductor package. The first patterned dielectric layer is disposed on the redistribution circuit layer and includes a marking pattern disposed on the dummy pattern and revealing a part of the dummy pattern.