Abstract: An apparatus for removing a photoresist layer from at least one alignment mark of a wafer is provided. The apparatus includes a holder, a solvent dispenser, and a suction unit. The holder is used to support the wafer, wherein the alignment mark is formed in a peripheral region of the wafer. The solvent dispenser is used to spray a solvent onto the photoresist layer on the alignment mark of the wafer to generate a dissolved photoresist layer. The suction unit is used to remove the dissolved photoresist layer and the solvent from the wafer through exhausting.

Abstract: An optical component packaging structure is provided. The optical component packaging structure includes a substrate, a far-infrared sensor chip, a metal covering cap and a light filter. The far-infrared sensor chip is disposed on the substrate and electrically connected to the substrate. The metal covering cap is disposed on the substrate and accommodating the far-infrared sensor chip. The metal covering cap has an opening exposing the far-infrared sensor chip. The light filter is disposed out of the opening and on the inner surface for covering the opening to filter the far-infrared light passing through. The far-infrared sensor chip is surrounded by the metal covering cap, the substrate and the light filter, and the metal covering cap is directly connected with the substrate.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: A treatment method of wastewater containing high-concentration boron includes steps as follows: pouring wastewater containing high-concentration boron into a PH value adjusting tank; pouring an alkaline solution into the PH value adjusting tank; pouring the wastewater containing boron into a boron-removing electrocoagulation tank, and an electric conducting electrolyte being provided for performing an electrocoagulation procedure; discharging sludge generated by the electrocoagulation procedure into a boron-contained sludge dewatering tank; outputting the wastewater containing boron into a first absorbing tank provided with a first absorbing material to perform an absorbing and filtering procedure; outputting the wastewater containing boron into a second absorbing tank provided with a second absorbing material to perform another absorbing and filtering procedure; and outputting the wastewater containing boron into a filtering tank to perform another filtering procedure for outputting the wastewater containing

Abstract: There is provided an optical sensor package including a substrate, a base layer, an optical detection region, a light source and a light blocking wall. The base layer is arranged on the substrate. The light detection region and the light source are arranged on the base layer. The light blocking wall is arranged on the base layer, and located between the light detection region and the light source to block light directly propagating from the light source to the light detection region.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: An apparatus for removing a photoresist layer from at least one alignment mark of a wafer is provided. The apparatus includes a holder, a solvent dispenser, and a suction unit. The holder is used to support the wafer, wherein the alignment mark is formed in a peripheral region of the wafer. The solvent dispenser is used to spray a solvent onto the photoresist layer on the alignment mark of the wafer to generate a dissolved photoresist layer. The suction unit is used to remove the dissolved photoresist layer and the solvent from the wafer through exhausting.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: The instant disclosure provides an optical component packaging structure which includes a far-infrared sensor chip, a first metal layer, a packaging housing and a covering member. The far-infrared sensor chip includes a semiconductor substrate and a semiconductor stack structure. The semiconductor substrate has a first surface, a second surface which is opposite to the first surface, and a cavity. The semiconductor stack structure is disposed on the first surface of the semiconductor substrate, and a part of the semiconductor stack structure is located above the cavity. The first metal layer is disposed on the second surface of the semiconductor substrate, the packaging housing is used to encapsulate the far-infrared sensor chip and expose at least a part of the far-infrared sensor chip, and the covering member is disposed above the semiconductor stack structure.

Abstract: A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 ?m to 400 ?m. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.

Abstract: A display device including a display unit and at least one lens module is provided. The at least one lens module includes a first lens barrel, a second lens barrel, at least one lens, and a driving unit. The first lens barrel is connected to the display unit. The second lens barrel includes a barrel body and a rack. The barrel body is screwed with the first lens barrel, and the rack is disposed around the barrel body. The at least one lens is disposed in the barrel body. The driving unit is engaged with the rack. The driving unit is adapted to drive the barrel body to rotate through the rack, such that the second lens barrel moves relatively to the first lens barrel to change a distance between the at least one lens and the display unit.

Abstract: A sensor chip package structure and a manufacturing method thereof are provided. The sensor chip package structure includes a substrate, a sensor chip and a wiring layer. The sensor chip is mounted on the substrate and has a top surface and a concave portion concaved from the top surface. The sensor chip has an active region formed on the top surface and the concave portion is located at one side of the active region. The concave portion has a depth of 100 ?m to 400 ?m. The wiring layer is disposed on the sensor chip and electrically connected to the active region. At least a portion of the wiring layer extends from the active region along a sidewall of the concave portion to a bottom surface of the concave portion.

Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Abstract: A chip package includes: a semiconductor chip having an upper surface and a lower surface opposite to each other, the semiconductor chip including an image sensor circuit; a metal heat conductive layer formed on the lower surface, for conducting or absorbing heat generated by the semiconductor chip; a bond pad formed on the upper surface, for electrically connecting with the image sensor circuit in the semiconductor chip, wherein the metal heat conductive layer conducts or absorbs heat generated by the semiconductor chip, to thereby reduce temperature of the image sensor circuit in the semiconductor chip and improve the performance of the circuit, wherein the metal heat conductive layer entirely covers the lower surface.

Abstract: The present invention discloses a chip package and a manufacturing method thereof. The chip package includes: a semiconductor chip having an upper surface and a lower surface opposite to each other; a metal heat conductive layer formed on the lower surface, for conducting or absorbing heat generated by the semiconductor chip; and a bond pad formed on the upper surface, for electrically connecting to a circuit in the semiconductor chip.