Abstract: A method and system of automatic beam energy control. First, a substrate is provided. Next, hydrogen content of the substrate is measured to determine whether hydrogen content exceeds a critical hydrogen content limit. A warning is issued when hydrogen content exceeds a critical hydrogen content limit. Substrate thickness is measured when hydrogen content does not exceed a critical hydrogen content limit. A database comprising a plurality of beam energy values individually absorbed by substrates of different thicknesses is provided. An appropriate beam energy level corresponding to the measured thickness is provided by the database. Finally, beam energy is delivered to the substrate accordingly.

Abstract: An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

Abstract: A method of fabricating an organic electroluminescent device. A substrate comprising an organic electroluminescent unit thereon is provided. A passivation layer is formed on the substrate to cover the organic electroluminescent layer. An ion beam is provided to perform a surface treatment on the passivation layer. A plastic layer is formed on the passivation layer. The steps of forming the passivation layer, providing the ion beam and forming the plastic layer are repeated at least once to enhance device reliability. In addition, a solid passivation layer is formed by the steps of forming the passivation layer, providing the ion beam and forming the plastic layer.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor. The method includes steps of: first, a substrate is provided and a buffer layer is then formed over the substrate. Next, a low surface energy material layer is formed over the buffer layer and then a first amorphous silicon layer is formed on the low surface energy material layer, or on a buffer layer processed by hydrogen plasma. The first amorphous silicon layer is completely melted by a laser annealing step so that the liquid first amorphous silicon layer sequentially transforms into a number of polysilicon seeds being uniformly distributed on the low surface energy material layer. A second amorphous silicon layer is further formed over the low surface energy material layer and covers the polysilicon seeds.

Abstract: A method for grinding lens is provided in the invention. First, a lens which has an optical surface and a surface-to-be-grinded is placed on a polishing pad. Next, cover up the lens with a fluid guiding tube wherein the fluid guiding tube has a fluid inlet and a fluid outlet with the fluid outlet being situated at the top of the polishing pad for accommodating the lens. After that, a fluid is introduced into the fluid guiding tube through the fluid inlet and is discharged from the fluid outlet, and the flow of the fluid follows the normal direction of the optical surface and applies force evenly thereon. Last, the polishing pad is moved along with the tangent line of its surface for the surface-to-be-grinded to be grinded.

Abstract: A method for grinding lens is provided in the invention. First, a lens which has an optical surface and a surface-to-be-grinded is placed on a polishing pad. Next, cover up the lens with a fluid guiding tube wherein the fluid guiding tube has a fluid inlet and a fluid outlet with the fluid outlet being situated at the top of the polishing pad for accommodating the lens. After that, a fluid is introduced into the fluid guiding tube through the fluid inlet and is discharged from the fluid outlet, and the flow of the fluid follows the normal direction of the optical surface and applies force evenly thereon. Last, the polishing pad is moved along with the tangent line of its surface for the surface-to-be-grinded to be grinded.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor. The method includes steps of: first, a substrate is provided and a buffer layer is then formed over the substrate. Next, a low surface energy material layer is formed over the buffer layer and then a first amorphous silicon layer is formed on the low surface energy material layer, or on a buffer layer processed by hydrogen plasma. The first amorphous silicon layer is completely melted by a laser annealing step so that the liquid first amorphous silicon layer sequentially transforms into a number of polysilicon seeds being uniformly distributed on the low surface energy material layer. A second amorphous silicon layer is further formed over the low surface energy material layer and covers the polysilicon seeds.

Abstract: A method and system of automatic beam energy control. First, a substrate is provided. Next, hydrogen content of the substrate is measured to determine whether hydrogen content exceeds a critical hydrogen content limit. A warning is issued when hydrogen content exceeds a critical hydrogen content limit. Substrate thickness is measured when hydrogen content does not exceed a critical hydrogen content limit. A database comprising a plurality of beam energy values individually absorbed by substrates of different thicknesses is provided. An appropriate beam energy level corresponding to the measured thickness is provided by the database. Finally, beam energy is delivered to the substrate accordingly.

Abstract: A method for inspecting crystal quality of a polysilicon film. First, a substrate covered by a polysilicon layer is provided. Next, a probe light beam having a predetermined wavelength is irradiated through a beam splitter to separate into a first light beam and a second light beam, which is used for irradiating the polysilicon layer. Thereafter, the light intensity of the first light beam and the light intensity of the second light beam reflected from the polysilicon layer are detected to achieve a light intensity ratio. Finally, crystal quality of the polysilicon layer is monitored by the light intensity ratio. An apparatus for inspecting crystal quality of a polysilicon film and the method for controlling the same are also disclosed.

Abstract: A process for forming a polysilicon layer. First, an amorphous silicon layer is formed. Next, the amorphous silicon layer is pre-treated such that a surface of the amorphous silicon layer is oxidized to a silicon oxide layer or nitridized to a silicon nitride layer. Next, the amorphous silicon layer is crystallized to form a polysilicon layer. TFT fabricated by the present invention has smaller Vt and higher electron mobility.

Abstract: A method of fabricating an organic electroluminescent device. A substrate comprising an organic electroluminescent unit thereon is provided. A passivation layer is formed on the substrate to cover the organic electroluminescent layer. An ion beam is provided to perform a surface treatment on the passivation layer. A plastic layer is formed on the passivation layer. The steps of forming the passivation layer, providing the ion beam and forming the plastic layer are repeated at least once to enhance device reliability. In addition, a solid passivation layer is formed by the steps of forming the passivation layer, providing the ion beam and forming the plastic layer.

Abstract: An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

Abstract: A holding stand for fragile plates comprises two hold frames, at least two spacing rods and at least a lateral protect cage and/or a lower protect cage. The hold frames have hollow portions and are disposed to space apart from each other oppositely. The two spacing rods are arranged between the hold frames with two ends of each of the spacing rods being fixedly attached to the two hold frames. The respective spacing rod provides a rod section with spacing pieces being arranged thereon. The lateral protect cage and/or a lower protect cage at both ends thereof being joined to the hold frames and each protect cage has a non-solid buffering enclosure. Once each of the fragile plates is placed between any two of the spacing pieces, the respective fragile plate can keep tight contact with the lateral cages and/or the lower cage.

Abstract: A holding stand for fragile plates comprises two hold frames, at least two spacing rods and at least a lateral protect cage and/or a lower protect cage. The hold frames have hollow portions and are disposed to space apart from each other oppositely. The two spacing rods are arranged between the hold frames with two ends of each of the spacing rods being fixedly attached to the two hold frames. The respective spacing rod provides a rod section with spacing pieces being arranged thereon. The lateral protect cage and/or a lower protect cage at both ends thereof being joined to the hold frames and each protect cage has a non-solid buffering enclosure. Once each of the fragile plates is placed between any two of the spacing pieces, the respective fragile plate can keep tight contact with the lateral cages and/or the lower cage.