Abstract: A semiconductor structure includes a first channel layer and a first barrier layer on the first channel layer. The first channel layer has a first potential well adjacent to the interface between the first channel layer and the first barrier layer. The semiconductor structure further includes a second channel layer on the first barrier layer, a second barrier layer on the second channel layer, and an intermediate layer between the second channel layer and the second barrier layer. The second channel layer has a second potential well adjacent to the interface between the second channel layer and the intermediate layer. The intermediate layer has a greater energy gap than either the first barrier layer or the second barrier layer. The energy gap of the first barrier layer is no less than the energy gap of the second barrier layer.

Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.

Abstract: A light emitting apparatus includes a housing, a connector, a light source, a control module board, and an antenna. The housing includes an inner space. The light source is located in the inner space. The control module board is located in the connector, wherein an accommodation space is formed by the housing and the control module board. The antenna is located in the accommodation space.

Abstract: A light emitting apparatus includes a housing, a connector, a light source, a control module board, and an antenna. The housing includes an inner space. The light source is located in the inner space. The control module board is located in the connector, wherein an accommodation space is formed by the housing and the control module board. The antenna is located in the accommodation space.

Abstract: A light-emitting device includes a current source module having a first transistor, a first voltage control module providing a negative voltage and a second voltage control module having a second transistor. The second voltage control module is electrically connected to the current source module and the first voltage control module.

Abstract: A compound semiconductor device is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region; a semiconductor layer disposed on the substrate; and a buffer layer located between said substrate and said semiconductor layer; wherein doping conditions of said first doped region and said second doped region are different from each other; wherein said semiconductor layer has different thicknesses on locations corresponding to said first doped region and said second doped region respectively, and is formed as a structure with difference in thickness.

Abstract: A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other.

Abstract: A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other.

Abstract: A compound semiconductor device and method of fabricating the same according to the present invention is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second doped region, and a semiconductor layer disposed on the substrate, wherein doping conditions of said first doped region and said second doped region may be different from each other.