Patents by Inventor Yi-Chen Chang

Yi-Chen Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240401714
    Abstract: A piezoelectric valve may be formed using semiconductor processing techniques such that the piezoelectric valve is biased in a normally closed configuration. Actuation of the piezoelectric valve may be achieved through the use of a piezoelectric-based actuation layer of the piezoelectric valve. The piezoelectric valve may be implemented in various use cases, such as a dispensing valve for precise drug delivery, a relief valve to reduce the occlusion effect in speaker-based devices (e.g., in-ear headphones), a pressure control valve, and/or another type of valve that is configured for microfluidic control, among other examples. The normally closed configuration of the piezoelectric valve enables the piezoelectric valve to operate as a normally closed valve with reduced power consumption.
    Type: Application
    Filed: August 22, 2023
    Publication date: December 5, 2024
    Inventors: Yi-Hsien CHANG, Fu-Chun HUANG, Po-Chen YEH, Chao-Hung CHU, Ching-Hui LIN, Chun-Ren CHENG, Shih-Fen HUANG
  • Patent number: 12157763
    Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.
    Type: Grant
    Filed: January 3, 2024
    Date of Patent: December 3, 2024
    Assignee: Academia Sinica
    Inventors: Kuo-I Lin, Che Ma, Chi-Huey Wong, Szu-Wen Wang, Yi-Hsuan Chang, Xiaorui Chen, Han-Yi Huang
  • Publication number: 20240395607
    Abstract: A semiconductor device includes source/drain contacts, a gate structure, a gate dielectric cap, an etch stop layer, and a gate contact. The source/drain contacts are over a substrate. The gate structure is laterally between the source/drain contacts. The gate dielectric cap is over the gate structure and in contact with the source/drain contacts. The etch stop layer is over the source/drain contacts and the gate dielectric cap. The etch stop layer has an oxidized region directly above the gate dielectric cap. The gate contact extends through the etch stop layer and the gate dielectric cap to the gate structure. The gate contact and the oxidized region of the etch stop layer form an interface perpendicular to the substrate.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Te-Chih HSIUNG, Yi-Chun CHANG, Jyun-De WU, Yi-Chen WANG, Yuan-Tien TU, Huan-Just LIN
  • Publication number: 20240397828
    Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric device including a piezoelectric structure over a substrate. A first conductive structure is disposed on a lower surface of the piezoelectric structure. The first conductive structure includes one or more first movable elements directly contacting the piezoelectric structure. A second conductive structure is disposed on an upper surface of the piezoelectric structure. The second conductive structure includes one or more second movable elements directly contacting the piezoelectric structure. The one or more second movable elements directly overlie the one or more first movable elements.
    Type: Application
    Filed: May 22, 2023
    Publication date: November 28, 2024
    Inventors: Ching-Hui Lin, Yi-Hsien Chang, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang, Chao-Hung Chu, Po-Chen Yeh
  • Publication number: 20240385523
    Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Cheng LIU, Yi-Chen KUO, Jia-Lin WEI, Ming-Hui WENG, Yen-Yu CHEN, Jr-Hung LI, Yahru CHENG, Chi-Ming YANG, Tze-Liang LEE, Ching-Yu CHANG
  • Publication number: 20240387266
    Abstract: Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 12146354
    Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.
    Type: Grant
    Filed: July 10, 2023
    Date of Patent: November 19, 2024
    Assignee: PEGATRON CORPORATION
    Inventors: Chun-Fu Chang, Hui-Chen Wang, Yi-Chun Tang
  • Publication number: 20240371956
    Abstract: A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.
    Type: Application
    Filed: July 15, 2024
    Publication date: November 7, 2024
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 12137534
    Abstract: A hardware-based fan controller for controlling fan modules in a computer system having multiple computer nodes is disclosed. Each of the computer nodes has a service processor. The fan controller includes a slave module that receives fan speed commands from each of the service processors. A fan speed generator is coupled to the slave module and a subset of the fan modules. The fan speed generator receives fan speed commands from the slave module and fan speed outputs from the subset of fan modules. The fan speed generator is configured to output a speed command to each of the fan modules in the subset.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: November 5, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Hsien-Yang Cheng, Ying-Che Chang, Yi-An Chen, Yu-Tang Zeng
  • Publication number: 20240355623
    Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
    Type: Application
    Filed: July 2, 2024
    Publication date: October 24, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Chen KUO, Chih-Cheng LIU, Ming-Hui WENG, Jia-Lin WEI, Yen-Yu CHEN, Jr-Hung LI, Yahru CHENG, Chi-Ming YANG, Tze-Liang LEE, Ching-Yu CHANG
  • Patent number: 12119386
    Abstract: A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.
    Type: Grant
    Filed: June 7, 2021
    Date of Patent: October 15, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 12107007
    Abstract: Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: October 1, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 12107003
    Abstract: A semiconductor device includes a gate structure, source/drain regions, source/drain contacts, a gate dielectric cap, an etch stop layer, and a gate contact. The gate structure is over a substrate. The source/drain regions are at opposite sides of the gate structure. The source/drain contacts are over the source/drain regions, respectively. The gate dielectric cap is over the gate structure and has opposite sidewalls interfacing the source/drain contacts.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: October 1, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Te-Chih Hsiung, Yi-Chun Chang, Jyun-De Wu, Yi-Chen Wang, Yuan-Tien Tu, Huan-Just Lin
  • Publication number: 20240324474
    Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
    Type: Application
    Filed: June 6, 2024
    Publication date: September 26, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der CHIH, Wen-Zhang LIN, Yun-Sheng CHEN, Jonathan Tsung-Yung CHANG, Chrong-Jung LIN, Ya-Chin KING, Cheng-Jun LIN, Wang-Yi LEE
  • Publication number: 20240314428
    Abstract: A method for performing camera modality adaptation in a simultaneous localization and mapping (SLAM) device is provided. The SLAM device includes a camera sensor and a SLAM processor. The method includes acquiring data from the SLAM device, and determining, based on the acquired data, an operational condition of the SLAM device. The method also includes deciding, based on the determined operational condition, a camera modality for the SLAM device. The method further includes controlling, based on the decided camera modality, a camera modality of an image sequence inputted into the SLAM processor.
    Type: Application
    Filed: March 8, 2024
    Publication date: September 19, 2024
    Applicant: MEDIATEK, INC.
    Inventors: Yang-Tzu LIU TSEN, Chun Chen LIN, Tung-Chien CHEN, Chia-Da LEE, Jia-Ren CHANG, Deep YAP, Wai Mun WONG, Yi Cheng LU, Chia-Ming CHENG
  • Publication number: 20240312833
    Abstract: A semiconductor structure includes a contact plug on a source/drain region of a transistor, and a via on the contact plug. The via includes a lower portion and an upper portion over the lower portion, the lower portion of the via tapers upward, and the upper portion of the via tapers downward. The semiconductor structure further includes a metal line on the via.
    Type: Application
    Filed: May 24, 2024
    Publication date: September 19, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Te-Chih HSIUNG, Jyun-De WU, Yi-Chun CHANG, Yi-Chen WANG, Yuan-Tien TU
  • Patent number: 12085260
    Abstract: A backlight module and a display device are provided. The backlight module includes a light source structure and at least one optical film. The optical film is disposed above the light source structure. The optical film includes a main body and plural optical structures. The optical structures are disposed on the main body. Each of the optical structures is a tapered structure. Each of the optical structures has plural side surfaces, and a portion of light emitted from the light source structure is guided toward plural primary directions when passing through the side surfaces of the optical structures, and therefore the light emitted from the light source is no longer concentrated on the top of each of the optical structures.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: September 10, 2024
    Assignees: Radiant(Guangzhou) Opto-Electronics Co., Ltd, Radiant Opto-Electronics Corporation
    Inventors: Yen-Chuan Chu, Chia-Yin Chang, Chin-Ting Weng, Yi-Ching Chung, Hao Chen
  • Publication number: 20240297038
    Abstract: The present disclosure provides a method. In some embodiments, the method includes forming a first porogen over a dielectric film; depositing a first dielectric monolayer over the first porogen and in contact with the dielectric film; removing the first porogen. In some embodiments, the method includes forming a first porogen over a substrate; forming a first dielectric film over the first porogen; after forming the first dielectric film, performing an UV treatment on the first porogen.
    Type: Application
    Filed: May 13, 2024
    Publication date: September 5, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chen HO, You-Hua CHOU, Yen-Hao LIAO, Che-Lun CHANG, Zhen-Cheng WU
  • Patent number: 12077993
    Abstract: A detachable electronic device and a dock thereof are provided. The detachable electronic device includes a first machine body, a second machine body, and a dock. The dock includes a pair of fixing brackets, a pair of rotating axles, a latch module disposed between the rotating axles, a lock base, and a linkage kit. The latch module can be arranged in a locked state or an unlocked state to lock or release the second machine body. The lock base is slidably disposed on one of the fixing brackets. The linkage kit has one end fixed to the latch module, and the other another end slidably sleeved onto the lock base. When an anti-theft lock is locked to the lock base, the lock base restricts a displacement of the linkage kit, and the linkage kit restricts the latch module to the locked state.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: September 3, 2024
    Assignee: PEGATRON CORPORATION
    Inventors: Chun-Fu Chang, Yi-Chun Tang, Peng-Chia Huang, Hui-Chen Wang
  • Patent number: 12079306
    Abstract: A contrastive learning method for color constancy employs a fully-supervised construction of contrastive pairs, driven by a novel data augmentation. The contrastive learning method includes receiving two training images, constructing positive and negative contrastive pairs by the novel data augmentation, extracting representations by a feature extraction function, and training a color constancy model by contrastive learning representations in the positive contrastive pair are closer than representations in the negative contrastive pair. The positive contrastive pair contains images having an identical illuminant while negative contrastive pair contains images having different illuminants. The contrastive learning method improves the performance without additional computational costs. The desired contrastive pairs allow the color constancy model to learn better illuminant feature that are particular robust to worse-cases in data sparse regions.
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: September 3, 2024
    Assignee: MEDIATEK INC.
    Inventors: Yi-Chen Lo, Chia-Che Chang