Abstract: Soluble TREML1 is involved in many inflammatory diseases and plays an important role in immune suppression. Soluble TREML1 can bind the l-domain of CD11b and induce an immune suppressive phenotype. Thus, soluble TREML1 may be a good target for treating inflammatory diseases. The present invention relates to antibodies that can reduce soluble TREML1 binding to CD11b+ immune cells and their uses for reversing TREML14 induced immune suppression. Anti-TREML1 antibodies provide a novel and potential therapy for these disease conditions such as cancer.

Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

Abstract: A piezoelectric valve may be formed using semiconductor processing techniques such that the piezoelectric valve is biased in a normally closed configuration. Actuation of the piezoelectric valve may be achieved through the use of a piezoelectric-based actuation layer of the piezoelectric valve. The piezoelectric valve may be implemented in various use cases, such as a dispensing valve for precise drug delivery, a relief valve to reduce the occlusion effect in speaker-based devices (e.g., in-ear headphones), a pressure control valve, and/or another type of valve that is configured for microfluidic control, among other examples. The normally closed configuration of the piezoelectric valve enables the piezoelectric valve to operate as a normally closed valve with reduced power consumption.

Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.

Abstract: A semiconductor device includes source/drain contacts, a gate structure, a gate dielectric cap, an etch stop layer, and a gate contact. The source/drain contacts are over a substrate. The gate structure is laterally between the source/drain contacts. The gate dielectric cap is over the gate structure and in contact with the source/drain contacts. The etch stop layer is over the source/drain contacts and the gate dielectric cap. The etch stop layer has an oxidized region directly above the gate dielectric cap. The gate contact extends through the etch stop layer and the gate dielectric cap to the gate structure. The gate contact and the oxidized region of the etch stop layer form an interface perpendicular to the substrate.

Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric device including a piezoelectric structure over a substrate. A first conductive structure is disposed on a lower surface of the piezoelectric structure. The first conductive structure includes one or more first movable elements directly contacting the piezoelectric structure. A second conductive structure is disposed on an upper surface of the piezoelectric structure. The second conductive structure includes one or more second movable elements directly contacting the piezoelectric structure. The one or more second movable elements directly overlie the one or more first movable elements.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.

Abstract: A hardware-based fan controller for controlling fan modules in a computer system having multiple computer nodes is disclosed. Each of the computer nodes has a service processor. The fan controller includes a slave module that receives fan speed commands from each of the service processors. A fan speed generator is coupled to the slave module and a subset of the fan modules. The fan speed generator receives fan speed commands from the slave module and fan speed outputs from the subset of fan modules. The fan speed generator is configured to output a speed command to each of the fan modules in the subset.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method includes removing a dummy gate stack to form a first trench between gate spacers, forming a replacement gate stack in the first trench, recessing the replacement gate stack to form a second trench between the gate spacers, selectively depositing a conductive capping layer in the second trench, forming a dielectric hard mask in the second trench and over the conductive capping layer, and etching the dielectric hard mask using an etching gas to form an opening in the dielectric hard mask. The replacement gate stack is revealed to the opening. The conductive capping layer is more resistant to the etching gas than the replacement gate stack. The method further comprises forming a gate contact plug over and contacting the conductive capping layer.

Abstract: Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.

Abstract: A semiconductor device includes a gate structure, source/drain regions, source/drain contacts, a gate dielectric cap, an etch stop layer, and a gate contact. The gate structure is over a substrate. The source/drain regions are at opposite sides of the gate structure. The source/drain contacts are over the source/drain regions, respectively. The gate dielectric cap is over the gate structure and has opposite sidewalls interfacing the source/drain contacts.

Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.

Abstract: A method for performing camera modality adaptation in a simultaneous localization and mapping (SLAM) device is provided. The SLAM device includes a camera sensor and a SLAM processor. The method includes acquiring data from the SLAM device, and determining, based on the acquired data, an operational condition of the SLAM device. The method also includes deciding, based on the determined operational condition, a camera modality for the SLAM device. The method further includes controlling, based on the decided camera modality, a camera modality of an image sequence inputted into the SLAM processor.

Abstract: A semiconductor structure includes a contact plug on a source/drain region of a transistor, and a via on the contact plug. The via includes a lower portion and an upper portion over the lower portion, the lower portion of the via tapers upward, and the upper portion of the via tapers downward. The semiconductor structure further includes a metal line on the via.

Abstract: A backlight module and a display device are provided. The backlight module includes a light source structure and at least one optical film. The optical film is disposed above the light source structure. The optical film includes a main body and plural optical structures. The optical structures are disposed on the main body. Each of the optical structures is a tapered structure. Each of the optical structures has plural side surfaces, and a portion of light emitted from the light source structure is guided toward plural primary directions when passing through the side surfaces of the optical structures, and therefore the light emitted from the light source is no longer concentrated on the top of each of the optical structures.

Abstract: The present disclosure provides a method. In some embodiments, the method includes forming a first porogen over a dielectric film; depositing a first dielectric monolayer over the first porogen and in contact with the dielectric film; removing the first porogen. In some embodiments, the method includes forming a first porogen over a substrate; forming a first dielectric film over the first porogen; after forming the first dielectric film, performing an UV treatment on the first porogen.