Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Abstract: A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.

Abstract: An object displacement detection method includes capturing n images of an object for obtaining n sets of image dots, where the object corresponds to an ith set of image dots in an ith image of the n images; performing (n?1) difference calculations using the n sets of image dots to obtain (n?1) sets of difference image dots, where a jth set of difference image dots of the (n?1) sets of difference image dots is generated by performing a jth difference calculation of the (n?1) difference calculations using a (j+1)th set of image dots and a jth set of image dots of the n sets of the image dots; and determining the object has displaced when a sum of numbers of the (n?1) sets of difference image dots reaches a first threshold.

Abstract: A semiconductor device includes a semiconductor substrate, a capacitor, and an interconnection layer. The capacitor is over the semiconductor substrate and includes a bottom electrode, a top electrode, and an insulator layer. The top electrode has a top surface and a bottom surface rougher than the top surface of the top electrode. The insulator layer is between the bottom electrode and the top electrode. The interconnection layer is over the semiconductor substrate and is electrically connected to the capacitor.

Abstract: A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.

Abstract: An object displacement detection method includes capturing n images of an object for obtaining n sets of image dots, where the object corresponds to an ith set of image dots in an ith image of the n images; performing (n?1) difference calculations using the n sets of image dots to obtain (n?1) sets of difference image dots, where a jth set of difference image dots of the (n?1) sets of difference image dots is generated by performing a jth difference calculation of the (n?1) difference calculations using a (j+1)th set of image dots and a jth set of image dots of the n sets of the image dots; and determining the object has displaced when a sum of numbers of the (n?1) sets of difference image dots reaches a first threshold.

Abstract: An auto-execution signal processing method and an apparatus performing the method are provided. That method is particularly applied to the apparatus supporting recognition of a human interface device standard. The apparatus preferably has an activation element such as a button, and it is to execute an automatic execution process by a key-activation manually or automatically as in connection with a computer system. Therefore, a predetermined purpose is met. According to a preferred embodiment, the apparatus having the auto-execution function is firstly initialized. Next, the activation element thereon is used to launch the automatic execution process. The process includes a step of driving a Finite State Machine to transfer an executable string of code to a computer system via a connection interface. After that, the executable string is compiled by an operating system in order to launch an application, such as entering a proprietary webpage.

Abstract: An auto-execution signal processing method and an apparatus performing the method are provided. That method is particularly applied to the apparatus supporting recognition of a human interface device standard. The apparatus preferably has an activation element such as a button, and it is to execute an automatic execution process by a key-activation manually or automatically as in connection with a computer system. Therefore, a predetermined purpose is met. According to a preferred embodiment, the apparatus having the auto-execution function is firstly initialized. Next, the activation element thereon is used to launch the automatic execution process. The process includes a step of driving a Finite State Machine to transfer an executable string of code to a computer system via a connection interface. After that, the executable string is compiled by an operating system in order to launch an application, such as entering a proprietary webpage.

Abstract: The conventional I/O devices of a storage element, such as memory card, have a built-in microprocessor control unit (MCU) for executing the I/O commands. The demand of MCU increases the cost. Besides, the capacity of the storage element supported by the device is depend on the firmware inside the MCU. Since the updating of firmware is a tough job, the supportability is lack of elasticity. This invention discloses a method for driving the I/O device of storage element that strengthens the device driver to get rid of the MCU. The capacity supported hence can be raised by merely updating the device driver.

Abstract: The conventional apparatus for reading/writing storage devices need a built-in microprocessor control unit (MCU) to process commands. Thus, the flexiability (e.g.: supporting capacity of storage device) and the cost of the apparatus are not satisfied. The present invention employs a driver and a hardwire circuit to replace the MCU for money saving without changing other units in the apparatus. Moreover, the apparatus of the present invention can raise the supporting capacity of storage device and compatibility by just updating the driver.