Abstract: A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.

Abstract: A method of fabricating photoresist thinner is provided. A photoresist material and a first photoresist thinner are provided. The first photoresist thinner is suitable for thinning the photoresist material. The first photoresist thinner comprises a plurality of first solvents each having a first Hansen parameter. The photoresist material has a second Hansen parameter. A first region is defined according to the first Hansen parameters. A plurality of second solvents is selected according to the first Hansen parameters of the first solvents. Each second solvent has a third Hansen parameters corresponding to at least one of the first solvents. The second solvents are mixed to form a second photoresist thinner. The second photoresist thinner has a fourth Hansen parameter located within the first region. Therefore, the cost of the photoresist thinner can be reduced.

Abstract: A patterned gold bump structure for a semiconductor chip comprises at least a patterned gold bump disposed on an insulating layer of a semiconductor chip, wherein the gold bump is used as a circuit component or a passing line. In some embodiments, the circuit component is a capacitor, a resistor, or an inductor.

Abstract: A flat panel display, an image correction circuit and method thereof are provided. The image correction circuit mainly includes a digital to analog conversion unit and a data processing unit. The digital to analog conversion unit includes a temperature sensor and a gamma voltage generator. The gamma voltage generator is adopted for generating a plurality of gamma voltages, and the temperature sensor is electrically connected to the gamma voltage generator and adopted for sensing the working temperature of the gamma voltage generator. The data processing unit is electrically connected to the digital to analog conversion unit. When the working temperature of the gamma voltage generator changes to higher (or lower) than the room temperature, the data processing unit selects and outputs applicable digital data to the digital to analog conversion unit. Therefore, the digital to analog conversion unit outputs a predetermined gamma voltage at room temperature according to the digital data.

Abstract: A spraying device comprises a spraying plate, having a plurality of tiny holes, a vibrating element, set on a periphery of the spraying plate, and driving a vibrating movement thereof, a wrapping layer, made of soft material and tightly surrounding the vibrating element, sealing the vibrating element from the liquid, and a fastening cap, allowing for quick mounting and dismounting of the spraying device; wherein the vibrating movement of the spraying plate causes liquid adjacent to a lower side of the spraying plate to be periodically compressed and thereby to be pressed through the holes of the spraying plate, and wherein the wrapping layer prevents external interference with the vibrating movement, at the same time minimizing transmission losses of vibrational energy, enhancing effectivity of spraying.

Abstract: A micro-droplet generator comprises a main body, having a chamber accommodating liquid to be sprayed and a lateral opening, a spraying plate, placed in the opening and having a plurality of spraying holes as well as an inner side, a vibrating element, glued on the spraying plate and driving vibrations thereof, and a top surface carrier, placed inside the chamber and having a top surface that with the inner side of the spraying plate forms an inner part of the chamber, wherein a narrow space is left between the inner side of the spraying plate and the top surface of the projection, which upon the vibrations of the spraying plate has a varying width, upon becoming wider sucking in liquid from the chamber, and upon becoming narrower pressing out liquid through the spraying holes.

Abstract: A spraying device comprises a spraying plate, having a plurality of tiny holes, a vibrating element, set on a periphery of the spraying plate, and driving a vibrating movement thereof, a wrapping layer, made of soft material and tightly surrounding the vibrating element, sealing the vibrating element from the liquid, and a fastening cap, allowing for quick mounting and dismounting of the spraying device; wherein the vibrating movement of the spraying plate causes liquid adjacent to a lower side of the spraying plate to be periodically compressed and thereby to be pressed through the holes of the spraying plate, and wherein the wrapping layer prevents external interference with the vibrating movement, at the same time minimizing transmission losses of vibrational energy, enhancing effectivity of spraying.

Abstract: A micro-droplet generator comprises a main body, having a chamber accommodating liquid to be sprayed and a lateral opening, a spraying plate, placed in the opening and having a plurality of spraying holes as well as an inner side, a vibrating element, glued on the spraying plate and driving vibrations thereof, and a projection, placed inside the chamber and having an outer side touch with the inner side of the spraying plate, wherein a narrow space is left between the inner side of the spraying plate and the outer side of the projection, which upon the vibrations of the spraying plate has a varying width, upon becoming wider sucking in liquid from the chamber, and upon becoming narrower pressing out liquid through the spraying holes.

Abstract: A method for fabricating an asymmetric semiconductor device is provided. A substrate formed with at least one base structure of MOSFET thereon is provided, wherein the base structure includes a gate over the substrate and a source extension and a drain extension in the substrate beside the gate. The base structure is then treated with an anisotropic annealing source inclined in the source-to-drain direction of the base structure relative to the normal of the substrate, such that one of the source and drain extensions is shadowed by the gate and the other is annealed more.

Abstract: A transflective electrophoretic display device is disclosed. The device is comprised of a transparent top substrate and both top and bottom substrates have an electrode structure. A plurality of separated walls and an electrophoretic display solution including a plurality of chromatic particles and a transparent liquid are imposed between the two substrates. A device with a display liquid or a filter plate is used to generate a variety of lights such as monochromatic, color-level or true color having a mixture of red, green and blue. The device of the present invention integrates the merits of the reflective and transmitted displayer, and can be used outdoors, indoors or in darkness. Otherwise, a back light module can compensate for the contrast of the displayer effectively.