Patents by Inventor YI-CHENG CHIANG
YI-CHENG CHIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12021136Abstract: A semiconductor structure includes a plurality of fin structures extending along a first direction, a plurality of gate structure segments positioned along a line extending in a second direction, the second direction being orthogonal to the first direction, wherein the gate structure segments are separated by dummy fin structures. The semiconductor structure further includes a conductive layer disposed over both the gate structure segments and the dummy fin structures to electrically connect at least some of the gate structure segments, and a cut feature aligned with one of the dummy fin structures and positioned to electrically isolate gate structure segments on both sides of the one of the dummy fin structures.Type: GrantFiled: July 28, 2023Date of Patent: June 25, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Ting Pan, Huan-Chieh Su, Jia-Chuan You, Shi Ning Ju, Kuo-Cheng Chiang, Yi-Ruei Jhan, Li-Yang Chuang, Chih-Hao Wang
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Patent number: 11996332Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor stack, a second semiconductor stack, a first gate structure, and a second gate structure. The semiconductor substrate comprising a first device region and a second device region. The first semiconductor stack is located on the semiconductor substrate over the first device region, and has first channels. The second semiconductor stack is located on the semiconductor substrate over the second device region, and has second channels. A total number of the first channels is greater than a total number of the second channels. The first gate structure encloses the first semiconductor stack. The second gate structure encloses the second semiconductor stack.Type: GrantFiled: March 8, 2023Date of Patent: May 28, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuan-Ting Pan, Chih-Hao Wang, Kuo-Cheng Chiang, Yi-Bo Liao, Yi-Ruei Jhan
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Patent number: 11990374Abstract: Embodiments of the present disclosure provide a method of forming sidewall spacers by filling a trench between a hybrid fin and a semiconductor fin structure. The sidewall spacer includes two fin sidewall spacer portions connected by a gate sidewall spacer portion. The fin sidewall spacer portion has a substantially uniform profile to provide uniform protection for vertically stacked channel layers and eliminate any gaps and leaks between inner spacers and sidewall spacers.Type: GrantFiled: December 19, 2022Date of Patent: May 21, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuan-Ting Pan, Kuo-Cheng Chiang, Shi Ning Ju, Yi-Ruei Jhan, Kuan-Lun Cheng, Chih-Hao Wang
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Patent number: 11955554Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.Type: GrantFiled: July 15, 2022Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Huan-Sheng Wei, Hung-Li Chiang, Chia-Wen Liu, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu, Ying-Keung Leung
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Publication number: 20240112959Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.Type: ApplicationFiled: December 1, 2023Publication date: April 4, 2024Inventors: Kuan-Ting PAN, Zhi-Chang LIN, Yi-Ruei JHAN, Chi-Hao WANG, Huan-Chieh SU, Shi Ning JU, Kuo-Cheng CHIANG
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Patent number: 11942543Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.Type: GrantFiled: June 29, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
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Publication number: 20240092665Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.Type: ApplicationFiled: August 31, 2023Publication date: March 21, 2024Inventors: KUO-CHING LIN, YUNG-CHENG CHIANG, SHR-HAN SHIU, MENG-CHIH CHUNG, YI-SYUAN HUANG
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Patent number: 9572306Abstract: The present invention provides a planting box device composed of at least a modular frame, which further comprises a frame set, a connecting rod group, wherein the frame set includes a first frame and a second frame; the first frame has a bearing plate, four corners of which are positioned by first openings and first posts and which also forms a plurality of positioning openings; the second frame having a sink forms second openings and second posts on its four corners, wherein the second posts are accommodated with the first openings in size and the sink has an inlet and an outlet; the connecting rod group comprises a plurality of connecting rods, each of which has rod openings and rod posts, so that the composition of the planting box device described above has function of structural expansion in horizontal and vertical direction and thus provides convenience in assembly and disassembly.Type: GrantFiled: January 17, 2014Date of Patent: February 21, 2017Inventors: Yi-Cheng Chiang, Hero Chen
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Publication number: 20150201563Abstract: The present invention provides a planting box device composed of at least a modular frame, which further comprises a frame set, a connecting rod group, wherein the frame set includes a first frame and a second frame; the first frame has a bearing plate, four corners of which are positioned by first openings and first posts and which also forms a plurality of positioning openings; the second frame having a sink forms second openings and second posts on its four corners, wherein the second posts are accommodated with the first openings in size and the sink has an inlet and an outlet; the connecting rod group comprises a plurality of connecting rods, each of which has rod openings and rod posts, so that the composition of the planting box device described above has function of structural expansion in horizontal and vertical direction and thus provides convenience in assembly and disassembly.Type: ApplicationFiled: January 17, 2014Publication date: July 23, 2015Inventors: YI-CHENG CHIANG, HERO CHEN