Patents by Inventor Yi-Cheng Wei

Yi-Cheng Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11992322
    Abstract: A heart rhythm detection method and system by using radar sensor is capable of collecting an original signal using a radar sensor toward at least one subject, and converting the original signal to a two dimensional image information (i.e., spectrogram) using the concept of image vision. Then, the neural network automatically learns which heartbeat frequency should be focused on and which heartbeat frequency should be filtered out in the two dimensional image information through deep learning, so that the heartbeat frequencies can be extracted effectively.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: May 28, 2024
    Assignee: IONETWORKS INC.
    Inventors: Jing-Ming Guo, Ting Lin, Chia-Fen Chang, Jeffry Susanto, Yi-Hsiang Lin, Po-Cheng Huang, Yu-Wen Wei
  • Publication number: 20240164003
    Abstract: An electrostatic discharge device including at least two conductive materials isolated from each other and at least one electrostatic eliminator. The conductive materials are located outside two opposite side walls of an insulated fluid-carrying member and separated from the side walls thereof. When electrostatic charges are accumulated on the insulated fluid-carrying member, the electrostatic charges form an electrostatic voltage on the conductive materials. The electrostatic eliminator is electrically connected to the conductive materials and directly disconnected from a grounding terminal. The electrostatic eliminator releases and eliminates the electrostatic charges by the conductive materials to reduce the electrostatic voltage. In addition, the insulated fluid-carrying member can also be replaced by an insulation container. When the insulation container is used, induction electrodes can replace the conductive materials in the insulation container.
    Type: Application
    Filed: November 16, 2023
    Publication date: May 16, 2024
    Inventors: TAO-CHIN WEI, YUAN-PING LIU, YI-CHENG LIU
  • Publication number: 20240120812
    Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.
    Type: Application
    Filed: July 17, 2023
    Publication date: April 11, 2024
    Inventors: Chi-Hsiang Kuo, Yi-Yu Lee, Zuo-Ying Wei, Yuan-Kai Liao, Wen-Cheng Hsieh
  • Patent number: 11955554
    Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.
    Type: Grant
    Filed: July 15, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Sheng Wei, Hung-Li Chiang, Chia-Wen Liu, Yi-Ming Sheu, Zhiqiang Wu, Chung-Cheng Wu, Ying-Keung Leung
  • Patent number: 10658149
    Abstract: An ion source head structure of a semiconductor ion implanter including a filament, a filament clamp, a cathode, a cathode clamp, an insulation assembly is provided. The filament clamp clamps the filament. The cathode presents a shell shape and has a receiving space. The filament is located in the receiving space. The cathode clamp clamps the cathode. The insulation assembly is disposed between the filament clamp and the cathode clamp such that the filament clamp is insulated from the cathode clamp. The insulation assembly has a first surface, a second surface opposite to the first surface, and an outer surface between the first surface and the second surface, wherein the first surface of the insulation assembly is in contact with the filament clamp, and the second surface of the insulation assembly is in contact with the cathode clamp. A step difference exists on the outer surface of the insulation assembly.
    Type: Grant
    Filed: April 3, 2019
    Date of Patent: May 19, 2020
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Yi-Cheng Wei, Kun-Shu Huang, Wen-Hao Lin, Ta-Chen Hsu