Patents by Inventor Yi-Chia Lee
Yi-Chia Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160186105Abstract: A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R?NH2, wherein R? is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.Type: ApplicationFiled: December 21, 2015Publication date: June 30, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Wen Dar Liu, Yi-Chia Lee, Tianniu Chen, William Jack Casteel, JR., Seiji Inaoka, Gene Everad Parris
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Publication number: 20160179011Abstract: A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.Type: ApplicationFiled: December 9, 2015Publication date: June 23, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Rajiv Krishan Agarwal, Mark Richard Brown, Aiping Wu, David Barry Rennie, Yi-Chia Lee, Gene Everad Parris
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Publication number: 20160125715Abstract: In a method for an electronic device to issue an alarm, the electronic device determines whether alarm detection status is enabled or disabled. If enabled, location information of the electronic device is acquired at predetermined time intervals and a current location of the electronic device is stored. The electronic device further detects whether the electronic device needs to execute an alarm. When an alarm is required, the electronic device executes the alarm by performing preset operations. The preset operations include sending preset information to designated contacts in a preset mode, and the preset information includes current location of the electronic device.Type: ApplicationFiled: June 3, 2015Publication date: May 5, 2016Inventor: YI-CHIA LEE
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Publication number: 20160010035Abstract: There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).Type: ApplicationFiled: July 2, 2015Publication date: January 14, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Wen Dar Liu, Seiji Inaoka, Yi-Chia Lee, Agnes Derecskei-Kovacs
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Patent number: 9201308Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: GrantFiled: July 8, 2013Date of Patent: December 1, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20150175943Abstract: Aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing titanium nitride(TiN or TiNxOy) etch residue.Type: ApplicationFiled: November 19, 2014Publication date: June 25, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: William Jack Casteel, JR., Seiji Inaoka, Madhukar Bhaskara Rao, Brenda Faye Ross, Yi-Chia Lee, Wen Dar Liu, Tianniu Chen
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Patent number: 8889609Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.Type: GrantFiled: March 7, 2012Date of Patent: November 18, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Yi-Chia Lee, Wen Dar Liu, Machukar Bhaskara Rao, Gautam Banerjee
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Publication number: 20140109931Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.Type: ApplicationFiled: August 27, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Yi Chia Lee, Madhukar Bhaskara Rao, Gautam Banerjee, Wen Dar Liu, Aiping Wu, Seiji Inaoka
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Publication number: 20130296215Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: ApplicationFiled: July 8, 2013Publication date: November 7, 2013Inventors: Madhukar Bhaskara RAO, Gautam BANERJEE, Thomas Michael Wieder, Yi-Chia LEE, Wen Dar LIU, Aiping WU
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Patent number: 8518865Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: GrantFiled: August 19, 2010Date of Patent: August 27, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20130061882Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.Type: ApplicationFiled: March 7, 2012Publication date: March 14, 2013Applicant: Air Products and Chemicals, Inc.Inventors: Aiping Wu, Yi-Chia Lee, Wen Dar Liu, Machukar Bhaskara Rao, Gautam Banerjee
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Patent number: 8357646Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.Type: GrantFiled: February 27, 2009Date of Patent: January 22, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Wen Dar Liu, Yi Chia Lee, Archie Liao, Madhukar Bhaskara Rao, Matthew I. Egbe, Chimin Sheu, Michael Walter Legenza
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Publication number: 20110212866Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.Type: ApplicationFiled: August 19, 2010Publication date: September 1, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Madhukar Bhaskara Rao, Gautam Banerjee, Thomas Michael Wieder, Yi-Chia Lee, Wen Dar Liu, Aiping Wu
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Publication number: 20100235363Abstract: A method for displaying multimedia files via an electronic device using a first display program and a second display program to classify and rank the multimedia files. The first display program classifies the multimedia files to one or more categorized groups according to a first feature of each image file, and ranks the multimedia files in each categorized group according to a second feature of each image file. The second display program classifies the multimedia files to one or more categorized groups according to the second feature of each image file, and ranks the multimedia files in each categorized group according to the first feature of each image file.Type: ApplicationFiled: August 5, 2009Publication date: September 16, 2010Applicant: FOXCONN COMMUNICATION TECHNOLOGY CORP.Inventors: SHU-YUN HUANG, YI-CHIA LEE, YI-TING HAN
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Publication number: 20090229629Abstract: The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.Type: ApplicationFiled: March 9, 2009Publication date: September 17, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Yi-Chia Lee, Wen Dar Liu, Archie Liao, Matthew I. Egbe, Madhukar Bhaskara Rao, Michael Walter Legenza, Chimin Sheu
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Publication number: 20090227483Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.Type: ApplicationFiled: February 27, 2009Publication date: September 10, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Wen Dar Liu, Yi Chia Lee, Archie Liao, Madhukar Bhaskara Rao, Matthew I. Egbe, Chimin Sheu, Michael Walter Legenza
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Patent number: 7306681Abstract: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.Type: GrantFiled: May 12, 2004Date of Patent: December 11, 2007Assignee: United Microelectronics Corp.Inventors: Ya-Lun Cheng, Yi-Chia Lee, Yu-Ren Wang, Neng-Hui Yang
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Patent number: 7250332Abstract: The present invention discloses a method for fabricating a semiconductor device. A substrate is provided. At least one first and second gate structure, having sidewalls, are included on a surface of the substrate. A first ion implantation process is performed to form a shallow-junction doping region of a first conductive type in the substrate next to each of the sidewalls of the first gate structure, followed by the formation of offset spacers on each of the sidewalls of the first and second gate structure. A second ion implantation process is performed to form a shallow-junction doping region of a second conductive type in the substrate next to the offset spacer on each of the sidewalls of the second gate structure.Type: GrantFiled: August 19, 2004Date of Patent: July 31, 2007Assignee: United Microelectronics Corp.Inventors: Wen-Koi Lai, Tung-Hsing Lee, Tai-Yuan Lee, Yu-Lung Chin, Yi-Chia Lee, Shyh-Fann Ting
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Publication number: 20060040448Abstract: The present invention discloses a method for fabricating a semiconductor device. A substrate is provided. At least one first and second gate structure, having sidewalls, are included on a surface of the substrate. A first ion implantation process is performed to form a shallow-junction doping region of a first conductive type in the substrate next to each of the sidewalls of the first gate structure, followed by the formation of offset spacers on each of the sidewalls of the first and second gate structure. A second ion implantation process is performed to form a shallow-junction doping region of a second conductive type in the substrate next to the offset spacer on each of the sidewalls of the second gate structure.Type: ApplicationFiled: August 19, 2004Publication date: February 23, 2006Inventors: Wen-Koi Lai, Tung-Hsing Lee, Tai-Yuan Lee, Yu-Lung Chin, Yi-Chia Lee, Shyh-Fann Ting
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Publication number: 20050252525Abstract: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.Type: ApplicationFiled: May 12, 2004Publication date: November 17, 2005Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ya-Lun Cheng, Yi-Chia Lee, Yu-Ren Wang, Neng-Hui Yang