Patents by Inventor Yi-Chieh Chiu

Yi-Chieh Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10878928
    Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
  • Publication number: 20200098440
    Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.
    Type: Application
    Filed: May 13, 2019
    Publication date: March 26, 2020
    Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
  • Patent number: 10276227
    Abstract: A method for verifying a write operation in a memory cell (e.g., a non-volatile memory cell) that includes performing a first read operation of the memory cell to measure a first current associated with the memory cell and comparing the measured first current associated with the memory cell to a first predetermined threshold current to determine whether the write operation changed the state of the memory cell. If the measured first current associated with the memory cell indicates the write operation did change the state of the memory cell the method further includes performing a second read operation of the memory cell to measure a second current associated with the memory cell and comparing the measured second current associated with the memory cell to a second predetermined threshold current to determine whether the write operation changed the state of the memory cell to the desired state or an intermediate state.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Der Chih, Chien-Ye Lee, Jenn-Jou Wu, Yi-Chieh Chiu, Yi-Chun Shih, William J. Gallagher
  • Publication number: 20180315464
    Abstract: A method for verifying a write operation in a memory cell (e.g., a non-volatile memory cell) that includes performing a first read operation of the memory cell to measure a first current associated with the memory cell and comparing the measured first current associated with the memory cell to a first predetermined threshold current to determine whether the write operation changed the state of the memory cell. If the measured first current associated with the memory cell indicates the write operation did change the state of the memory cell the method further includes performing a second read operation of the memory cell to measure a second current associated with the memory cell and comparing the measured second current associated with the memory cell to a second predetermined threshold current to determine whether the write operation changed the state of the memory cell to the desired state or an intermediate state.
    Type: Application
    Filed: April 28, 2017
    Publication date: November 1, 2018
    Inventors: Yu-Der Chih, Chien-Ye Lee, Jenn-Jou Wu, Yi-Chieh Chiu, Yi-Chun Shih, William J. Gallagher
  • Patent number: 9627060
    Abstract: A method includes applying a first voltage setting to a memory cell for a first period of time in response to a command for programming a first logical state to the memory cell, obtaining a first stored logical state of the memory cell after the applying the first voltage setting operation, and if the first stored logical state differs from the first logical state, applying a second voltage setting to the memory cell.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 18, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Chieh Chiu, Chih-Yang Chang, Tassa Yang, Wen-Ting Chu
  • Publication number: 20160187968
    Abstract: An electronic device having a processor, a contact sensor, a blow sensor, and a storage device is disclosed. The processor senses at least one contact position via the contact sensor. The processor senses a blow action via the blow sensor. Then, the processor determines, based on the at least one contact position and/or the blow action, a predefined function and performs the predefined function.
    Type: Application
    Filed: December 27, 2015
    Publication date: June 30, 2016
    Inventor: Yi-Chieh Chiu
  • Publication number: 20160149606
    Abstract: Method of protecting a device using a protection device is provided. The protection device includes a water pressure sensor, a visibility sensor, an airbag, and a protection unit that is in communication with the water pressure sensor, the visibility sensor, and the airbag through a data bus. The protection unit obtains a water pressure value from the water pressure sensor, and activates the visibility sensor when the water pressure value is greater than a first predetermined value. The protection unit further obtains a visibility value from the visibility sensor, and inflates the airbag when the visibility value is less than a second predetermined value for a predetermined duration.
    Type: Application
    Filed: December 30, 2014
    Publication date: May 26, 2016
    Inventor: YI-CHIEH CHIU
  • Patent number: 9344137
    Abstract: Method of protecting a device using a protection device is provided. The protection device includes a water pressure sensor, a visibility sensor, an airbag, and a protection unit that is in communication with the water pressure sensor, the visibility sensor, and the airbag through a data bus. The protection unit obtains a water pressure value from the water pressure sensor, and activates the visibility sensor when the water pressure value is greater than a first predetermined value. The protection unit further obtains a visibility value from the visibility sensor, and inflates the airbag when the visibility value is less than a second predetermined value for a predetermined duration.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: May 17, 2016
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventor: Yi-Chieh Chiu
  • Publication number: 20160111156
    Abstract: A method includes applying a first voltage setting to a memory cell for a first period of time in response to a command for programming a first logical state to the memory cell, obtaining a first stored logical state of the memory cell after the applying the first voltage setting operation, and if the first stored logical state differs from the first logical state, applying a second voltage setting to the memory cell.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Inventors: Yi-Chieh CHIU, Chih-Yang CHANG, Tassa YANG, Wen-Ting CHU
  • Patent number: 9224470
    Abstract: A method includes applying a first voltage setting to a first node and a second node of a selected memory cell for a first predetermined period of time in response to a command for programming a first logical state to the selected memory cell. A first stored logical state of the selected memory cell is obtained after the applying the first voltage setting operation. If the first stored logical state differs from the first logical state, a second voltage setting is applied to the first node and the second node of the selected memory cell; and a first retrial is performed. The first retrial includes applying the first voltage setting to the first node and the second node of the selected memory cell for the first predetermined period of time.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: December 29, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Chieh Chiu, Chih-Yang Chang, Tassa Yang, Wen-Ting Chu