Patents by Inventor Yi-Chieh Chiu
Yi-Chieh Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10878928Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.Type: GrantFiled: May 13, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
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Publication number: 20200098440Abstract: Various embodiments of the present application are directed towards a one-time-programmable (OTP) implementation using magnetic junctions. In some embodiments, an array comprises multiple magnetic junctions in multiple columns and multiple rows, and the magnetic junctions comprise a first magnetic junction and a second magnetic junction. The first and second magnetic junctions comprise individual top ferromagnetic elements and individual bottom ferromagnetic elements, and further comprise individual barrier elements between the top and bottom ferromagnetic elements. A first barrier element of the first magnetic junction electrically separates first top and bottom ferromagnetic elements of the first magnetic junction. A second barrier element of the second magnetic junction has undergone breakdown, such that it has defects defining a leakage path between second top and bottom ferromagnetic elements of the second magnetic junction.Type: ApplicationFiled: May 13, 2019Publication date: March 26, 2020Inventors: Harry-Hak-Lay Chuang, Tien-Wei Chiang, Wen-Chun You, Yi-Chieh Chiu, Yu-Lin Chen, Jian-Cheng Huang, Chang-Hung Chen
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Patent number: 10276227Abstract: A method for verifying a write operation in a memory cell (e.g., a non-volatile memory cell) that includes performing a first read operation of the memory cell to measure a first current associated with the memory cell and comparing the measured first current associated with the memory cell to a first predetermined threshold current to determine whether the write operation changed the state of the memory cell. If the measured first current associated with the memory cell indicates the write operation did change the state of the memory cell the method further includes performing a second read operation of the memory cell to measure a second current associated with the memory cell and comparing the measured second current associated with the memory cell to a second predetermined threshold current to determine whether the write operation changed the state of the memory cell to the desired state or an intermediate state.Type: GrantFiled: April 28, 2017Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yu-Der Chih, Chien-Ye Lee, Jenn-Jou Wu, Yi-Chieh Chiu, Yi-Chun Shih, William J. Gallagher
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Publication number: 20180315464Abstract: A method for verifying a write operation in a memory cell (e.g., a non-volatile memory cell) that includes performing a first read operation of the memory cell to measure a first current associated with the memory cell and comparing the measured first current associated with the memory cell to a first predetermined threshold current to determine whether the write operation changed the state of the memory cell. If the measured first current associated with the memory cell indicates the write operation did change the state of the memory cell the method further includes performing a second read operation of the memory cell to measure a second current associated with the memory cell and comparing the measured second current associated with the memory cell to a second predetermined threshold current to determine whether the write operation changed the state of the memory cell to the desired state or an intermediate state.Type: ApplicationFiled: April 28, 2017Publication date: November 1, 2018Inventors: Yu-Der Chih, Chien-Ye Lee, Jenn-Jou Wu, Yi-Chieh Chiu, Yi-Chun Shih, William J. Gallagher
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Patent number: 9627060Abstract: A method includes applying a first voltage setting to a memory cell for a first period of time in response to a command for programming a first logical state to the memory cell, obtaining a first stored logical state of the memory cell after the applying the first voltage setting operation, and if the first stored logical state differs from the first logical state, applying a second voltage setting to the memory cell.Type: GrantFiled: December 28, 2015Date of Patent: April 18, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Chieh Chiu, Chih-Yang Chang, Tassa Yang, Wen-Ting Chu
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Publication number: 20160187968Abstract: An electronic device having a processor, a contact sensor, a blow sensor, and a storage device is disclosed. The processor senses at least one contact position via the contact sensor. The processor senses a blow action via the blow sensor. Then, the processor determines, based on the at least one contact position and/or the blow action, a predefined function and performs the predefined function.Type: ApplicationFiled: December 27, 2015Publication date: June 30, 2016Inventor: Yi-Chieh Chiu
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Publication number: 20160149606Abstract: Method of protecting a device using a protection device is provided. The protection device includes a water pressure sensor, a visibility sensor, an airbag, and a protection unit that is in communication with the water pressure sensor, the visibility sensor, and the airbag through a data bus. The protection unit obtains a water pressure value from the water pressure sensor, and activates the visibility sensor when the water pressure value is greater than a first predetermined value. The protection unit further obtains a visibility value from the visibility sensor, and inflates the airbag when the visibility value is less than a second predetermined value for a predetermined duration.Type: ApplicationFiled: December 30, 2014Publication date: May 26, 2016Inventor: YI-CHIEH CHIU
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Patent number: 9344137Abstract: Method of protecting a device using a protection device is provided. The protection device includes a water pressure sensor, a visibility sensor, an airbag, and a protection unit that is in communication with the water pressure sensor, the visibility sensor, and the airbag through a data bus. The protection unit obtains a water pressure value from the water pressure sensor, and activates the visibility sensor when the water pressure value is greater than a first predetermined value. The protection unit further obtains a visibility value from the visibility sensor, and inflates the airbag when the visibility value is less than a second predetermined value for a predetermined duration.Type: GrantFiled: December 30, 2014Date of Patent: May 17, 2016Assignee: Chiun Mai Communication Systems, Inc.Inventor: Yi-Chieh Chiu
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Publication number: 20160111156Abstract: A method includes applying a first voltage setting to a memory cell for a first period of time in response to a command for programming a first logical state to the memory cell, obtaining a first stored logical state of the memory cell after the applying the first voltage setting operation, and if the first stored logical state differs from the first logical state, applying a second voltage setting to the memory cell.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Inventors: Yi-Chieh CHIU, Chih-Yang CHANG, Tassa YANG, Wen-Ting CHU
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Patent number: 9224470Abstract: A method includes applying a first voltage setting to a first node and a second node of a selected memory cell for a first predetermined period of time in response to a command for programming a first logical state to the selected memory cell. A first stored logical state of the selected memory cell is obtained after the applying the first voltage setting operation. If the first stored logical state differs from the first logical state, a second voltage setting is applied to the first node and the second node of the selected memory cell; and a first retrial is performed. The first retrial includes applying the first voltage setting to the first node and the second node of the selected memory cell for the first predetermined period of time.Type: GrantFiled: August 5, 2014Date of Patent: December 29, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yi-Chieh Chiu, Chih-Yang Chang, Tassa Yang, Wen-Ting Chu