Patents by Inventor Yi-Chieh HSIEH
Yi-Chieh HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240167920Abstract: This disclosure presents a composition for tissue staining and 3D specimen optical clearing, along with a method of making biological material transparent and labeling it simultaneously. The composition includes an amide dye adjuvant, a RI-matching material, a permeating agent, a labeling material, a mixture homogeneity excipient, and a solvent with DMSO. The RI-matching material includes a contrast agent and sugar. The composition has a neutral or acidic pH. The method involves fixing a specimen with a fixative solution and immersing and incubating the specimen in the composition for permeation. This disclosure also presents a kit for rendering biological material transparent. The kit is helpful for experimental animal/human histological studies and cancer staging/tumor differentiation determination.Type: ApplicationFiled: November 16, 2023Publication date: May 23, 2024Applicant: JelloX Biotech Inc.Inventors: Yu-Han Hsieh, Yi-Wen Lin, YU-CHIEH LIN, YEN-YIN LIN
-
Publication number: 20240154517Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Inventors: Hung-Chieh LIN, Yi-Ping HSIEH, Jin-Zhong HUANG, Hung-Yu HUANG, Chih-Hsien LI, Ciao-Yin PAN
-
Patent number: 11964881Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.Type: GrantFiled: July 27, 2020Date of Patent: April 23, 2024Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan, Chung-Kai Chang, Chi-Shih Chen, Yu-Ting Cheng
-
Patent number: 11967898Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.Type: GrantFiled: January 6, 2022Date of Patent: April 23, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Hung-Chieh Lin, Yi-Ping Hsieh, Jin-Zhong Huang, Hung-Yu Huang, Chih-Hsien Li, Ciao-Yin Pan
-
Patent number: 11936238Abstract: An uninterruptible power apparatus is coupled between a power grid and a load. The uninterruptible power apparatus includes a bypass path, a power conversion module, and a control module. The bypass path is coupled to the power grid through a grid terminal, and coupled to the load through a load terminal. The control module turns off a first thyristor and a second thyristor by injecting a second voltage into the load terminal during a forced commutation period. The control module calculates a magnetic flux offset amount based on an error amount between the second voltage and a voltage command, and provides a compensation command in response to the magnetic flux offset amount. The control module controls the DC/AC conversion circuit to provide a third voltage to the load terminal based on the compensation command and the voltage command.Type: GrantFiled: June 15, 2022Date of Patent: March 19, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Hsin-Chih Chen, Hung-Chieh Lin, Chao-Lung Kuo, Yi-Ping Hsieh, Chien-Shien Lee
-
Patent number: 11914432Abstract: A portable electronic device including a first body, a second body, a pivot element, a heat source, a first flexible heat conductive element, and a flip cover is provided. The pivot element is connected to the second body, and the second body is pivotally connected to the first body through the pivot element. The heat source is disposed in the first body. The first flexible heat conductive element is thermally coupled to the heat source and extends toward the pivot element from the heat source. The first flexible heat conductive element passes through the pivot element and extends into the inside of the second body and is thus thermally coupled to the second body. The flip cover is pivotally connected to the first body and located on a moving path of the pivot element.Type: GrantFiled: April 19, 2022Date of Patent: February 27, 2024Assignee: Acer IncorporatedInventors: Chun-Chieh Wang, Wen-Neng Liao, Cheng-Wen Hsieh, Chuan-Hua Wang, Yi-Ta Huang
-
Publication number: 20210292187Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.Type: ApplicationFiled: July 27, 2020Publication date: September 23, 2021Inventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan
-
Publication number: 20210032736Abstract: A method of chemical deposition of Iridium oxide film on rigid substrate is provided. The method comprises providing a rigid substrate in a container, adding an iridium precursor and mixing the iridium precursor with water to form an iridium precursor liquid in the container, adding and mixing an oxidant with the iridium precursor liquid in the container; and depositing an iridium oxide film on the rigid substrate in the container. A chelating agent and pH adjustor can be either selectively used for stabilizing the chemical bath deposition and for adjusting pH value of the liquid. For a variety of rigid substrates to be applied, the pH adjustor can adjust the pH value within a range of 4˜13. By employing the proposed fabrication method, it is extraordinarily advantageous of chemical alkaline as well as chemical acid deposition formula with configuration of depositing sodium-doped IrOx iridium oxide film.Type: ApplicationFiled: July 30, 2019Publication date: February 4, 2021Inventors: PU-WEI WU, CHUNG-YU WU, KUANG-CHIH TSO, YI-CHIEH HSIEH, HAN-YI WANG
-
Patent number: 10872805Abstract: A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.Type: GrantFiled: December 3, 2018Date of Patent: December 22, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuei-Ming Chang, Chi-Wei Wu, Yi-Chieh Hsieh
-
Publication number: 20200105581Abstract: A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.Type: ApplicationFiled: December 3, 2018Publication date: April 2, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuei-Ming CHANG, Chi-Wei WU, Yi-Chieh HSIEH