Abstract: A semiconductor structure and a semiconductor die are provided. The semiconductor structure includes a semiconductor substrate, an electronic circuit, a first seal ring, a buffer zone and a conductive routing. The semiconductor substrate has a circuit region and a seal ring region surrounding the circuit region. The electronic circuit is disposed on the semiconductor substrate in the circuit region. The first seal ring is disposed on the semiconductor substrate in the seal ring region and surrounding the circuit region. The buffer zone is located in the seal ring region and interposed between the circuit region and the first seal ring. The first seal ring is separated from the circuit region by the buffer zone. The conductive routing is disposed on the semiconductor substrate in the buffer zone. The conductive routing is electrically connected to the electronic circuit.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A method of chemical deposition of Iridium oxide film on rigid substrate is provided. The method comprises providing a rigid substrate in a container, adding an iridium precursor and mixing the iridium precursor with water to form an iridium precursor liquid in the container, adding and mixing an oxidant with the iridium precursor liquid in the container; and depositing an iridium oxide film on the rigid substrate in the container. A chelating agent and pH adjustor can be either selectively used for stabilizing the chemical bath deposition and for adjusting pH value of the liquid. For a variety of rigid substrates to be applied, the pH adjustor can adjust the pH value within a range of 4˜13. By employing the proposed fabrication method, it is extraordinarily advantageous of chemical alkaline as well as chemical acid deposition formula with configuration of depositing sodium-doped IrOx iridium oxide film.

Abstract: A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.

Abstract: A semiconductor device includes a substrate, a shallow trench isolation (STI) structure, a first source/drain, a second source/drain, and an isolation dielectric. The substrate has a semiconductor fin. The STI structure surrounds the semiconductor fin. The first source/drain is embedded in the semiconductor fin. The second source/drain is embedded in the semiconductor fin. The isolation dielectric is between the first and second source/drains and extending into the semiconductor fin. An upper surface of the STI structure is free from coverage of the isolation dielectric.