Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A memory device includes first memory circuits and first memory controller. The first memory controller is configured to receive a first command from a first circuitry. When the first memory controller controls a first circuit in the first memory circuits to operate in an enable mode in response to the first command, the first memory controller is further configured to control remaining circuits in the first memory circuits to operate in a data retention mode in response to the first command.

Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A semiconductor device and method of manufacturing the same that utilizes dielectric pedestals on a sensing electrode. The semiconductor device includes a one or more membranes and an integrated circuit substrate. The integrated circuit substrate includes one or more conductive components disposed within a first dielectric layer on the substrate, with the conductive components interconnected with respective integrated circuit components. The substrate further includes one or more sensing electrodes electrically coupled to the conductive components, and one or more dielectric pedestals positioned within a landing area of the sensing electrode. In addition, the semiconductor device includes at least one cavity that is formed by the membrane positioned over the sensing electrode.

Abstract: A phase-locked loop (PLL) device includes a first phase detector to receive an in-phase reference clock and an in-phase feedback clock, the first phase detector to output a first phase error; a second phase detector to receive a quadrature reference clock and a quadrature feedback clock, the second phase detector to output a second phase error; a proportional path component to generate first current pulses from the first phase error and second current pulses from the second phase error; an integrator circuit coupled to the proportional path component, the integrator circuit to sum, within a current output signal, the first current pulses and the second current pulses; a ring oscillator to be driven by the current output signal; and a pair of phase interpolators coupled to an output of the ring oscillator, the pair of phase interpolators to respectively generate the in-phase feedback clock and the quadrature feedback clock.

Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A phase-locked loop (PLL) device includes a first phase detector to receive an in-phase reference clock and an in-phase feedback clock, the first phase detector to output a first phase error; a second phase detector to receive a quadrature reference clock and a quadrature feedback clock, the second phase detector to output a second phase error; a proportional path component to generate first current pulses from the first phase error and second current pulses from the second phase error; an integrator circuit coupled to the proportional path component, the integrator circuit to sum, within a current output signal, the first current pulses and the second current pulses; a ring oscillator to be driven by the current output signal; and a pair of phase interpolators coupled to an output of the ring oscillator, the pair of phase interpolators to respectively generate the in-phase feedback clock and the quadrature feedback clock.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

Abstract: A memory device includes first memory circuits and first memory controller. The first memory controller is configured to receive a first command from a first circuitry.

Abstract: A filter includes a filter circuit, a first processing circuit, and a second processing circuit. The filter circuit receives an input signal from an input node of the filter, and converts the input signal into a voltage output. The first processing circuit provides a first control voltage to an output node of the filter according to the voltage output, wherein the first control voltage is derived from an alternating current (AC) component of the voltage output. The second processing circuit provides a second control voltage to the output node of the filter according to the voltage output, wherein the second control voltage is derived from applying DC level shift to a direct current (DC) component of the voltage output.

Abstract: A filter includes a filter circuit, a first processing circuit, and a second processing circuit. The filter circuit receives an input signal from an input node of the filter, and converts the input signal into a voltage output. The first processing circuit provides a first control voltage to an output node of the filter according to the voltage output, wherein the first control voltage is derived from an alternating current (AC) component of the voltage output. The second processing circuit provides a second control voltage to the output node of the filter according to the voltage output, wherein the second control voltage is derived from applying DC level shift to a direct current (DC) component of the voltage output.

Abstract: A separable buoy includes a center float having a top surface that includes an upper peripheral end and an engagement bevel provided on the upper peripheral end that extends below the top surface; a separable float unit detachably disposed at the center float and including a dome wall that is provided in a lower central portion thereof and that has a peripheral edge configured to detachably engage the engagement bevel: and a chamber defined between the dome wall of the separable float unit and the top surface of the center float when the separable float unit engages the center float, wherein the center float has a vertical height that substantially equals or exceeds that of a lower portion of the separable float unit.

Abstract: A separable buoy includes a center float, a separable float unit that is detachably furnished in the center float and a chamber which is connected between the center float and the separable float unit.

Abstract: A clock generator has a multi-phase controllable oscillator. The multi-phase controllable oscillator includes oscillator core circuits, and has phase nodes at which clock signals with different phases are generated, respectively. Each oscillator core circuit includes a resistive component and an inverter. The resistive component is coupled between a first phase node and a second phase node of the multi-phase controllable oscillator, wherein clock signals generated at the first phase node and the second phase node have adjacent phases. The resistive components of the oscillator core circuits are cascaded in a ring configuration. The inverter receives an input feedback clock signal from one phase node of the multi-phase controllable oscillator, and generates an output feedback clock signal to the second phase node according to the input feedback clock signal.

Abstract: A clock generator has a multi-phase controllable oscillator. The multi-phase controllable oscillator includes oscillator core circuits, and has phase nodes at which clock signals with different phases are generated, respectively. Each oscillator core circuit includes a resistive component and an inverter. The resistive component is coupled between a first phase node and a second phase node of the multi-phase controllable oscillator, wherein clock signals generated at the first phase node and the second phase node have adjacent phases. The resistive components of the oscillator core circuits are cascaded in a ring configuration. The inverter receives an input feedback clock signal from one phase node of the multi-phase controllable oscillator, and generates an output feedback clock signal to the second phase node according to the input feedback clock signal.

Abstract: A control technique for an injection-locked phase-locked loop (ILPLL) includes the following steps: providing the ILPLL with a sampling clock and an injection clock for an integral path and a proportional path of the ILPLL, respectively; making a change in the power level of the injection clock to get the phase error of the integral path of the ILPLL; and controlling the phase difference between the sampling clock and the injection clock based on the phase error of the integral path of the ILPLL.