Abstract: The present disclosure is directed to methods for the fabrication of buried layers in gate-all-around (GAA) transistor structures to suppress junction leakage. In some embodiments, the method includes forming a doped epitaxial layer on a substrate, forming a stack of alternating first and second nano-sheet layers on the epitaxial layer, and patterning the stack and the epitaxial layer to form a fin structure. The method includes forming a sacrificial gate structure on the fin structure, removing portions of the fin structure not covered by the sacrificial gate structure, and etching portions of the first nano-sheet layers. Additionally, the method includes forming spacer structures on the etched portions of the first nano-sheet layers and forming source/drain (S/D) epitaxial structures on the epitaxial layer abutting the second nano-sheet layers.

Abstract: A waterproof click pad device includes a click pad, a frame and a waterproof unit. The frame surrounds the click pad and surrounds an axis passing through the click pad. The waterproof unit is transverse to the axis and is in sheet form. The waterproof unit includes a frame adhesive member surrounding the axis and adhered to the frame, a first non-adhesive member surrounding the axis, connected to an inner periphery of the frame adhesive member and spaced apart from and located above the frame, a second non-adhesive member surrounding the axis, connected to an inner periphery of the first non-adhesive member and spaced apart from and located above the click pad and the frame, and an plate adhesive member connected to an inner periphery of the second non-adhesive member and adhered to the click pad.

Abstract: A soft-switching power converter includes a main switch, an energy-releasing switch, and an inductive coupled unit. The main switch is a controllable switch. The energy-releasing switch is coupled to the main switch. The inductive coupled unit is coupled to the main switch and the energy-releasing switch. The inductive coupled unit includes a first inductance, a second inductance coupled to the first inductance, and an auxiliary switch unit. The auxiliary switch unit is coupled to the second inductance to form a closed loop. The main switch and the energy-releasing switch are alternately turned on and turned off. The auxiliary switch unit is controlled to start turning on before the main switch is turned on so as to provide at least one current path.

Abstract: A network quality measurement method and system are provided. In the method, a movement path and a movement speed of a vehicle device are determined according to a size of a space and an endurance time of the vehicle device, and the vehicle device is controlled to move on the movement path at the movement speed. During a movement of the vehicle device, a network quality in the space is measured according to a measurement frequency to generate network quality data. Whether the network quality in the space is changed is determined according to the network quality data. Whether there is an obstacle around the vehicle device is detected. When it is determined that the network quality in the space is changed or the obstacle is detected around the vehicle device, at least one of the movement path, the movement speed, and the measurement frequency is adjusted.

Abstract: An electronic device including a hinge module, a first body, a second body, and a flexible display assembled to the first body and the second body is provided. Each of the first body and the second body is pivoted and slidably connected to the hinge module, and a cover of the hinge module is exposed out of the first body and the second body. The first body and the second body are rotated relatively via the hinge module to bend or flatten the flexible display, when the flexible display is bending from a flat state, a bending portion of the flexible display leans against the cover and pushes the cover away from the first body and the second body.

Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: A portable electronic device including a first body, a second body, a pivot element, a heat source, a first flexible heat conductive element, and a flip cover is provided. The pivot element is connected to the second body, and the second body is pivotally connected to the first body through the pivot element. The heat source is disposed in the first body. The first flexible heat conductive element is thermally coupled to the heat source and extends toward the pivot element from the heat source. The first flexible heat conductive element passes through the pivot element and extends into the inside of the second body and is thus thermally coupled to the second body. The flip cover is pivotally connected to the first body and located on a moving path of the pivot element.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A memory device includes first memory circuits and first memory controller. The first memory controller is configured to receive a first command from a first circuitry. When the first memory controller controls a first circuit in the first memory circuits to operate in an enable mode in response to the first command, the first memory controller is further configured to control remaining circuits in the first memory circuits to operate in a data retention mode in response to the first command.

Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A semiconductor device and method of manufacturing the same that utilizes dielectric pedestals on a sensing electrode. The semiconductor device includes a one or more membranes and an integrated circuit substrate. The integrated circuit substrate includes one or more conductive components disposed within a first dielectric layer on the substrate, with the conductive components interconnected with respective integrated circuit components. The substrate further includes one or more sensing electrodes electrically coupled to the conductive components, and one or more dielectric pedestals positioned within a landing area of the sensing electrode. In addition, the semiconductor device includes at least one cavity that is formed by the membrane positioned over the sensing electrode.

Abstract: A phase-locked loop (PLL) device includes a first phase detector to receive an in-phase reference clock and an in-phase feedback clock, the first phase detector to output a first phase error; a second phase detector to receive a quadrature reference clock and a quadrature feedback clock, the second phase detector to output a second phase error; a proportional path component to generate first current pulses from the first phase error and second current pulses from the second phase error; an integrator circuit coupled to the proportional path component, the integrator circuit to sum, within a current output signal, the first current pulses and the second current pulses; a ring oscillator to be driven by the current output signal; and a pair of phase interpolators coupled to an output of the ring oscillator, the pair of phase interpolators to respectively generate the in-phase feedback clock and the quadrature feedback clock.

Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A phase-locked loop (PLL) device includes a first phase detector to receive an in-phase reference clock and an in-phase feedback clock, the first phase detector to output a first phase error; a second phase detector to receive a quadrature reference clock and a quadrature feedback clock, the second phase detector to output a second phase error; a proportional path component to generate first current pulses from the first phase error and second current pulses from the second phase error; an integrator circuit coupled to the proportional path component, the integrator circuit to sum, within a current output signal, the first current pulses and the second current pulses; a ring oscillator to be driven by the current output signal; and a pair of phase interpolators coupled to an output of the ring oscillator, the pair of phase interpolators to respectively generate the in-phase feedback clock and the quadrature feedback clock.

Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

Abstract: A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

Abstract: A memory device includes first memory circuits and first memory controller. The first memory controller is configured to receive a first command from a first circuitry.

Abstract: A filter includes a filter circuit, a first processing circuit, and a second processing circuit. The filter circuit receives an input signal from an input node of the filter, and converts the input signal into a voltage output. The first processing circuit provides a first control voltage to an output node of the filter according to the voltage output, wherein the first control voltage is derived from an alternating current (AC) component of the voltage output. The second processing circuit provides a second control voltage to the output node of the filter according to the voltage output, wherein the second control voltage is derived from applying DC level shift to a direct current (DC) component of the voltage output.