Abstract: A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.

Abstract: A solid-state storage device is provided. The solid-state storage device is electrically connected to a host. The solid-state storage device includes a controller, a non-volatile memory, and a volatile memory. The non-volatile memory is electrically connected to the controller. The volatile memory is electrically connected to the controller. The volatile memory includes a submission queue and a completion queue. The controller is configured to fetch an access command from the host, and record the access command in the submission queue. The access command corresponds to a first logical address. The controller is configured to determine whether a first write command is in the submission queue to generate a determination result. The first write command corresponds to a second logical address identical to the first logical address. The controller is configured to decide a processing method of the access command according to the determination result.

Abstract: A three-dimensional antenna includes a substrate, a radiator, a second radiator, a signal feeding element, and a grounding element. The radiator is installed on the substrate. The radiator includes a first child radiator and a second child radiator. The first child radiator has a first end and a second end. The second child radiator has a first end and a second end, wherein the second end of the second child radiator is coupled to the second end of the first child radiator. The second radiator is coupled to the radiator. The signal feeding element is coupled to the first end of the first child radiator. The grounding element is coupled between the substrate and the first end of the second child radiator. The first child radiator and the second child radiator form an inverted V-shape installed on the substrate.

Abstract: A three-dimensional antenna includes a substrate, a radiator, a second radiator, a signal feeding element, and a grounding element. The radiator is installed on the substrate. The radiator includes a first child radiator and a second child radiator. The first child radiator has a first end and a second end. The second child radiator has a first end and a second end, wherein the second end of the second child radiator is coupled to the second end of the first child radiator. The second radiator is coupled to the radiator. The signal feeding element is coupled to the first end of the first child radiator. The grounding element is coupled between the substrate and the first end of the second child radiator. The first child radiator and the second child radiator form an inverted V-shape installed on the substrate.