Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: A wearable device includes a frame element and a dielectric substrate. The frame element includes a first metal element, a second metal element, and a third metal element. A first gap is provided between the first metal element and the second metal element. A second gap is provided between the second metal element and the third metal element. A third gap is provided between the third metal element and the first metal element. The dielectric substrate is surrounded by the first metal element, the second metal element, and the third metal element. A first antenna element is formed by the first metal element. A second antenna element is formed by the second metal element. A third antenna element is formed by the third metal element.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A three-dimensional antenna includes a substrate, a radiator, a second radiator, a signal feeding element, and a grounding element. The radiator is installed on the substrate. The radiator includes a first child radiator and a second child radiator. The first child radiator has a first end and a second end. The second child radiator has a first end and a second end, wherein the second end of the second child radiator is coupled to the second end of the first child radiator. The second radiator is coupled to the radiator. The signal feeding element is coupled to the first end of the first child radiator. The grounding element is coupled between the substrate and the first end of the second child radiator. The first child radiator and the second child radiator form an inverted V-shape installed on the substrate.

Abstract: A three-dimensional antenna includes a substrate, a radiator, a second radiator, a signal feeding element, and a grounding element. The radiator is installed on the substrate. The radiator includes a first child radiator and a second child radiator. The first child radiator has a first end and a second end. The second child radiator has a first end and a second end, wherein the second end of the second child radiator is coupled to the second end of the first child radiator. The second radiator is coupled to the radiator. The signal feeding element is coupled to the first end of the first child radiator. The grounding element is coupled between the substrate and the first end of the second child radiator. The first child radiator and the second child radiator form an inverted V-shape installed on the substrate.