Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A method of orthopedic treatment includes steps of: by using a computer aided design (CAD) tool based on profile data that is related to a to-be-treated part of a bone of a patient, obtaining a model of a preliminary instrument that substantially fits the to-be-treated part; by using the CAD tool, obtaining a model of a patient specific instrument (PSI) based on the model of the preliminary instrument; producing the PSI based on the model of the PSI, the PSI being adjustable; performing medical operation on the to-be-treated part, and then attaching the PSI to the to-be-treated part; after attaching the PSI to the to-be-treated part, adjusting the PSI such that the PSI is adapted to real conditions of the to-be-treated part.

Abstract: A conductive pattern has been disclosed. The conductive pattern includes a pair of conductive traces. Each of the conductive traces comprises a linear portion and a terminal portion. The terminal portions are arranged adjacent to each other and comprises a pair of circular arc profile with a pair of complementary notches facing toward each other.

Abstract: An apparatus having stacked circuit boards has been disclosed. The apparatus includes a main circuit board and a sub circuit board disposed over the main circuit board. A plurality of sub components disposed on a bottom face of the sub circuit board penetrates through main circuit board and extends towards a bottom face of the main circuit board. In this say, a compact apparatus is produced.

Abstract: A circuit board structure includes a rigid circuit board, a flexible circuit board, a plurality of conductive bumps, and a plurality of spacers. The rigid and flexible circuit boards are stacked one above the other. The conductive bumps are formed between the rigid and flexible circuit boards. The spacers are formed between the rigid and flexible circuit boards and spaced apart from the conductive bumps.

Abstract: An apparatus having stacked circuit boards has been disclosed. The apparatus includes a main circuit board and a sub circuit board disposed over the main circuit board. A plurality of sub components disposed on a bottom face of the sub circuit board penetrates through main circuit board and extends towards a bottom face of the main circuit board. In this say, a compact apparatus is produced.

Abstract: A circuit board optimized for a denser component population within a standard size of footprint includes a mother board and a plurality of sub-board layers stacked on and connected to the mother board. Each of the sub-board layers has a plurality of daughter boards. The sub-board layers are composed of a first sub-board layer and a second sub-board layer. The daughter boards of the first sub-board layer are arranged on a side of the mother board, and the daughter boards of the second sub-board layer are arranged on the daughter boards of the first sub-board layer.

Abstract: A circuit board optimized for a denser component population within a standard size of footprint includes a mother board and a plurality of sub-board layers stacked on and connected to the mother board. Each of the sub-board layers has a plurality of daughter boards. The sub-board layers are composed of a first sub-board layer and a second sub-board layer. The daughter boards of the first sub-board layer are arranged on a side of the mother board, and the daughter boards of the second sub-board layer are arranged on the daughter boards of the first sub-board layer.

Abstract: A circuit board assembly comprising a printed circuit main board and a printed circuit sub-board, to avoid layout constraints, can support components on either board. The printed circuit main board includes first signal layer, and first and second through holes in the first signal layer. A first wire electrically couples a first electronic component and the first through hole. A second signal layer with third and fourth through holes is found on the printed circuit sub-board. The third through hole is electrically coupled to the first through hole, and the fourth through hole is electrically coupled to the second through hole.

Abstract: A circuit board includes a board defining a holding slot and a connector. The connector includes a conductive column and a pad fixed to one end of the conductive column. The pad is received within the holding slot. The conductive column is fixed within the board. The pad is soldered to a connecting portion of an electrical component. The pad defines a first through hole receiving solder when the connecting portion of the electrical component is soldered to the pad.