Patents by Inventor Yi-Ching Lee
Yi-Ching Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240132496Abstract: An ionic compound, an absorbent and an absorption device are provided. The ionic compound has a structure represented by Formula (I): ABn, ??Formula (I) wherein A is B is R1, R2, R3, R4, R5, and R6 are independently H, C1-6 alkyl group; and n is 1 or 2.Type: ApplicationFiled: June 9, 2023Publication date: April 25, 2024Applicant: Industrial Technology Research InstituteInventors: Wei-Chih LEE, Yi-Hsiang CHEN, Chih-Hao CHEN, Ai-Yu LIOU, Jyi-Ching PERNG, Jiun-Jen CHEN
-
Patent number: 11955154Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: GrantFiled: May 16, 2022Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
-
Patent number: 11937370Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.Type: GrantFiled: September 1, 2021Date of Patent: March 19, 2024Assignee: UNIFLEX Technology Inc.Inventors: Cheng-I Tu, Ying-Hsing Chen, Meng-Huan Chia, Hsin-Ching Su, Yi-Chun Liu, Cheng-Chung Lai, Yuan-Chih Lee
-
Publication number: 20230243810Abstract: A method of inhibiting an overactive fibroblast growth factor receptor 3 (FGFR3) in a cell by contacting the cell with a composition that contains an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Also disclosed is a method for treating a disorder associated with an overactive FGFR3 with a composition containing an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Further, a composition for treating a disorder associated with an overactive FGFR3 is described. The composition contains an ethanol extract of Amaranthus viridis.Type: ApplicationFiled: March 3, 2023Publication date: August 3, 2023Applicant: ACADEMIA SINICAInventors: Yuan-Tsong Chen, Yi-Ching Lee, Jer-Yuarn Wu, Hsiao-Jung Kao
-
Patent number: 11630102Abstract: A method of inhibiting an overactive fibroblast growth factor receptor 3 (FGFR3) in a cell by contacting the cell with a composition that contains an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Also disclosed is a method for treating a disorder associated with an overactive FGFR3 with a composition containing an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Further, a composition for treating a disorder associated with an overactive FGFR3 is described. The composition contains an ethanol extract of Amaranthus viridis.Type: GrantFiled: February 8, 2018Date of Patent: April 18, 2023Assignee: ACADEMIA SINICAInventors: Yuan-Tsong Chen, Yi-Ching Lee, Jer-Yuam Wu, Hsiao-Jung Kao
-
Publication number: 20230058195Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first semiconductor layer which includes a first dopant and a second dopant. The second semiconductor structure is located on the first semiconductor structure and includes the first dopan. The active region is located between the first semiconductor structure and the second semiconductor structure and includes the first dopant. The first dopant and the second dopant have different conductivity types.Type: ApplicationFiled: August 22, 2022Publication date: February 23, 2023Inventors: Shih-Nan YEN, Ming-Ta CHIN, Yi-Ching LEE, Cheng-Long YEH
-
Patent number: 11588072Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: GrantFiled: November 4, 2020Date of Patent: February 21, 2023Assignee: EPISTAR CORPORATIONInventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
-
Publication number: 20210135052Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.Type: ApplicationFiled: November 4, 2020Publication date: May 6, 2021Inventors: Yen-Chun Tseng, Kuo-Feng Huang, Shih-Chang Lee, Ming-Ta Chin, Shih-Nan Yen, Cheng-Hsing Chiang, Chia-Hung Lin, Cheng-Long Yeh, Yi-Ching Lee, Jui-Che Sung, Shih-Hao Cheng
-
Patent number: 10749077Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: GrantFiled: December 20, 2018Date of Patent: August 18, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
-
Patent number: 10600938Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: GrantFiled: May 18, 2018Date of Patent: March 24, 2020Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
-
Patent number: 10580937Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: GrantFiled: December 20, 2018Date of Patent: March 3, 2020Assignee: EPISTAR CORPORATIONInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
-
Publication number: 20190361004Abstract: A method of inhibiting an overactive fibroblast growth factor receptor 3 (FGFR3) in a cell by contacting the cell with a composition that contains an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Also disclosed is a method for treating a disorder associated with an overactive FGFR3 with a composition containing an effective amount of Pheophorbide a, Pyropheophorbide a, or an active derivative thereof. Further, a composition for treating a disorder associated with an overactive FGFR3 is described. The composition contains an ethanol extract of Amaranthus viridis.Type: ApplicationFiled: February 8, 2018Publication date: November 28, 2019Applicants: ACADEMIA SINICAInventors: Yuan-Tsong Chen, Yi-Ching Lee, Jer-Yuarn Wu, Hsiao-Jung Kao
-
Publication number: 20190148599Abstract: An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: December 20, 2018Publication date: May 16, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
-
Publication number: 20190131496Abstract: An optoelectronic device includes a semiconductor structure having a first side and a second side opposite to the first side, a first pad at the first side, a first finger connected to the electrode pad and having a first width, an insulating layer at the second side and comprising a first part under the first finger, the first part having a bottom surface with a second width larger than the first width and a side surface inclined to the bottom surface, and a contact layer covering the bottom surface and the side surface.Type: ApplicationFiled: December 20, 2018Publication date: May 2, 2019Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
-
Patent number: 10205059Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating from each other and formed of semiconductor material.Type: GrantFiled: September 20, 2017Date of Patent: February 12, 2019Assignee: Epistar CorporationInventors: Chun-Yu Lin, Yung-Fu Chang, Rong-Ren Lee, Kuo-Feng Huang, Cheng-Long Yeh, Yi-Ching Lee, Ming-Siang Huang, Ming-Tzung Liou
-
Publication number: 20180269358Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.Type: ApplicationFiled: May 18, 2018Publication date: September 20, 2018Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
-
Patent number: 10008636Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.Type: GrantFiled: October 27, 2017Date of Patent: June 26, 2018Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
-
Publication number: 20180069157Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.Type: ApplicationFiled: October 27, 2017Publication date: March 8, 2018Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
-
Publication number: 20180033918Abstract: The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.Type: ApplicationFiled: September 20, 2017Publication date: February 1, 2018Inventors: Chun-Yu LIN, Yung-Fu CHANG, Rong-Ren LEE, Kuo-Feng HUANG, Cheng-Long YEH, Yi-Ching LEE, Ming-Siang HUANG, Ming-Tzung LIOU
-
Patent number: D1018907Type: GrantFiled: November 15, 2021Date of Patent: March 19, 2024Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.Inventors: Yun-Chien Lee, Yi-Ching Hsu, Pei-Yi Lin, Yu-Hung Su, Sheng-Yuan Huang, Chun-Fu Lin