Abstract: A universal joint includes a socket member and a driving member. The socket member includes a receiving hole, and an inner periphery of the receiving hole is formed with first evading portions and first abutting portions staggered with each other to cause the first abutting portions not connected to each other. Each first abutting portion is provided with a first abutting face, a second abutting face, and an adjacent edge formed between the first abutting face and the second abutting face. One side of the adjacent edge forms an adjacent edge angle being greater than 177 degrees and less than 180 degrees. The driving member includes a rounded base arranged in the receiving hole and a driving column opposite to the rounded base.

Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: A structure with a photodiode, an HEMT and an SAW device includes a photodiode and an HEMT. The photodiode includes a first electrode and a second electrode. The first electrode contacts a P-type III-V semiconductor layer. The second electrode contacts an N-type III-V semiconductor layer. The HEMT includes a P-type gate disposed on an active layer. A gate electrode is disposed on the P-type gate. Two source/drain electrodes are respectively disposed at two sides of the P-type gate. Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate. Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, and between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.

Abstract: Provided is a pharmaceutical composition for delivery of an active agent to an eye. The pharmaceutical composition may comprise a lipid mixture; an active agent and a biocompatible hydrogel. The pharmaceutical composition achieves a prolonged therapeutic effect as well as reduced side effects. Also provided is a method of delivering an active agent in the pharmaceutical composition to an eye of a subject in need thereof.

Abstract: A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopants and a second dopant, and the second dopant comprises a group V material.

Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.

Abstract: Provided is a dual deposition chamber apparatus for producing silicon material, the apparatus including a furnace, a cooling jacket, a deposition device, and a vacuum extraction device. The cooling jacket communicates with the furnace, defines a space above the furnace, and includes an opening communicating with the space. The deposition device includes at least one first deposition substrate and at least one second deposition substrate. The at least one first deposition substrate and the at least one second deposition substrate are arranged side by side in the space, and respectively include a first inner wall surface and a second inner wall surface inclined downwards relative to a vertical axis. An uneven area is formed on the first inner wall surface and the second inner wall surface. The vacuum extraction device communicates with the opening of the cooling jacket.

Abstract: A touchpad module includes a base plate, a touch member and at least one pressure sensing module. The touch member is located over the base plate. The touch member includes a touch plate and a touch sensitive circuit board. The pressure sensing module is arranged between the base plate and the touch member. The pressure sensing module includes a pressure sensor and a miniature supporting plate. The pressure sensor is installed on the miniature supporting plate. The pressure sensor is electrically connected with the touch sensitive circuit board through the miniature supporting plate. While the touch member is pressed in response to an external pressing force, the pressing force exerted on the touch member is sensed by the at least one pressure sensing module, and the pressure sensing module generates a pressure sensing signal.

Abstract: A link down detector and a link down detecting method for Ethernet are provided. The link down detecting method includes the following steps. Firstly, a received signal is received, and a high-frequency band signal is extracted from the received signal. Consequently, the high-frequency band signal is formed as an extraction signal. Then, a high-frequency band power value of the extraction signal is calculated, and a full band power value of the received signal is calculated. Then, a ratio value of the high-frequency band power value to the full band power value is calculated. In a link up status, if the ratio value is changed dramatically in a specified time, a link down signal is asserted to indicate that a network device connected to the Ethernet is switched to a link down status.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: A device is described. The device includes a substrate having a first cavity. The device also includes a first redistribution layer (RDL) on sidewalls and a base of the first cavity in the substrate and on a first surface of the substrate. The device further includes a fill material in the first cavity.

Abstract: An SOT MRAM structure includes a word line. A second source/drain doping region and a fourth source/drain doping region are disposed at the same side of the word line. A first conductive line contacts the second source/drain doping region. A second conductive line contacts the fourth source/drain doping region. The second conductive line includes a third metal pad. A memory element contacts an end of the first conductive line. A second SOT element covers and contacts a top surface of the memory element. The third metal pad covers and contacts part of the top surface of the second SOT element.

Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.

Abstract: An optical proximity correction (OPC) operation method and an OPC operation device are provided. The OPC operation method includes the following steps. A mask layout is obtained. If the mask layout contains at least one defect hotspot, at least one partial area pattern is extracted from the mask layout according to the at least defect hotspot. A machine learning model is used to analyze the local area pattern to obtain at least one OPC strategy. The OPC strategy is implemented to correct the mask layout.

Abstract: A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends of the channel layer; a ferroelectric layer, lying between the gate electrode and the channel layer; and a first insertion layer, extending in between the ferroelectric layer and the channel layer, and comprising a metal carbonitride or a metal nitride.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: A touch device includes a touch panel, a circuit board, a vibrating unit and a pressure detection module. The touch panel includes two press regions. When different press regions of the touch panel are pressed by the user, the vibration feedback values generated by different press regions are different.