Patents by Inventor Yi-Chuan CHOU

Yi-Chuan CHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237149
    Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.
    Type: Grant
    Filed: November 10, 2022
    Date of Patent: February 25, 2025
    Assignee: Applied Materials, Inc.
    Inventors: Deyang Li, Sunil Srinivasan, Yi-Chuan Chou, Shahid Rauf, Kuan-Ting Liu, Jason A. Kenney, Chung Liu, Olivier P. Joubert, Shreeram Jyoti Dash, Aaron Eppler, Michael Thomas Nichols
  • Publication number: 20240162007
    Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.
    Type: Application
    Filed: November 10, 2022
    Publication date: May 16, 2024
    Inventors: Deyang LI, Sunil SRINIVASAN, Yi-Chuan CHOU, Shahid RAUF, Kuan-Ting LIU, Jason A. KENNEY, Chung LIU, Olivier P. JOUBERT, Shreeram Jyoti DASH, Aaron EPPLER, Michael Thomas NICHOLS