Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic element is disposed on a carrier structure, and an antenna structure is stacked on the carrier structure via conductors, where at least one through hole is formed on and penetrating through the antenna structure, and an insulating support body is formed between the carrier structure and the antenna structure, so that the insulating support body is correspondingly formed at the through hole and/or an edge of the antenna structure, and the through hole is free from being filled up by the insulating support body, such that the through hole has an air medium. The design of the through hole allows the characteristic of the dielectric constant of air being 1 to be utilized so as to reduce the signal loss and the signal offset, thereby facilitating the signal transmission of the antenna body.

Abstract: An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.

Abstract: An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.

Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.

Abstract: The present invention discloses a method for analyzing structure safety, and the method uses valid vibration measurement signals to obtain mutual feedbacks for a structural model analysis and a calibrated structural model to simulate a disaster situation to obtain the critical force exertion and deformation scale of a structure. The method is applied to capture the stability index of the structure to analyze the structure safety or applied for a structure safety evaluation or a health monitoring, or even for a structure multi-hazards safety determination.