Abstract: A device comprise a first semiconductor channel layer over a substrate, a second semiconductor channel layer over the first semiconductor channel layer, and source/drain epitaxial structures on opposite sides of the first semiconductor channel layer and opposite sides of the second semiconductor channel layer. A compressive strain in the second semiconductor channel layer is greater than a compressive strain in the first semiconductor channel layer. The source/drain epitaxial structures each comprise a first region interfacing the first semiconductor channel layer and a second region interfacing the second semiconductor channel layer, and the first region has a composition different from a composition of the second region.

Abstract: The invention provides novel high-energy density and low-cost flow electrochemical devices incorporating solid-flow electrodes, and further provides methods of using such electrochemical devices. Included are anode and cathode current collector foils that can be made to move during discharge or recharge of the device. Solid-flow devices according to the invention provide improved charging capability due to direct replacement of the conventional electrode stack, higher volumetric and gravimetric energy density, and reduced battery cost due to reduced dimensions of the ion-permeable layer.

Abstract: A device comprises a plurality of nanosheets, source/drain stressors, and a gate structure wrapping around the nanosheets. The nanosheets extend in a first direction above a semiconductor substrate and are arranged in a second direction substantially perpendicular to the first direction. The source/drain stressors are on either side of the nanosheets. Each of the source/drain stressors comprises a first epitaxial layer and a second epitaxial layer over the first epitaxial layer. The first and second epitaxial layers are made of a Group IV element and a Group V element. An atomic ratio of the Group V element to the Group IV element in the second epitaxial layer is greater than an atomic ratio of the Group V element to the Group IV element in the first epitaxial layer.

Abstract: Provided is an aqueous redox flow battery comprising a positive electrode, a negative electrode, a posolyte chamber containing a posolyte in a solvent, a negolyte chamber containing a polysulfide based negolyte and a soluble organic catalyst in a solvent, and a separator disposed between the posolyte chamber and the negolyte chamber, wherein the soluble organic catalyst has a potential lower than the polysulfide based negolyte.

Abstract: A method of designing a semiconductor device including the operations of analyzing a vertical abutment between a first standard cell block and a second cell block and, if a mismatch is identified between the first standard cell block and the second cell block initiating the selection of a first modified cell block that reduces the mismatch and a spacing between the first modified cell block and the second cell block, the first modified cell block comprising a first abutment region having a continuous active region arranged along a first axis parallel to an edge of the vertical abutment, and replacing the first standard cell block with the first modified cell block to obtain a first modified layout design and devices manufactured according to the method.

Abstract: Embodiments include monitoring a partial sum of a multiply accumulate calculation for certain conditions. When the certain conditions are met, a reduced read energy is used to read out memory contents instead of the regular read energy used. The reduced read energy may be obtained by reducing a pre-charge voltage, withholding a pre-charge voltage or providing a ground signal, and/or by reducing voltage hold times (i.e., reducing the time a pre-charge voltage is provided and/or discharged).

Abstract: Provided is an aqueous redox flow battery comprising a positive electrode, a negative electrode, a posolyte chamber containing a posolyte, a negolyte chamber containing a polyoxometalate as a negolyte, and a separator disposed between the posolyte chamber and the negolyte chamber, wherein the polyoxometalate has a conductivity of 65 mS cm?1 or more at ?20° C., and the aqueous redox flow battery has a power density of 250 mW cm?2 or more at ?20° C.

Abstract: A motor is provided and driven by two phase. The first and second control signals have a phase difference of 90 degrees and are configured to control the first and second driving units, respectively, and the first and second control signals drive the first and second coil sets, respectively. Each of the first and second poles of the permanent magnet occupies a mechanical angle of 360/2n degrees of the permanent magnet, respectively, and n is 1 or 3. The four sets of the coils of the stator are equally located on the stator, each set of the coil occupies a mechanical angle of 360/2m degrees of the stator, any two sets of the coils adjacent to each other are separated by a mechanical angle of 90?(360/2m) degrees, and m is 3 or 2, wherein m corresponds to 2 when n is 1, m corresponds to 3 when n is 3.

Abstract: A biquad hybrid active noise cancellation (ANC) device includes a reference microphone (MIC), an error MiC, a speaker, and a controller. The controller is connected to the reference MiC, the error MiC, and the speaker, wherein the controller includes a feedforward biquad ANC filter, a feedback biquad ANC filter, and a mixer, the feedforward biquad ANC filter processes reference noise to generate a feedforward noise control signal, the feedback biquad ANC filter processes residual noise received by the error MiC to generate a feedback noise control signal, and the feedforward noise control signal generated by the feedforward biquad ANC filter and the feedback noise control signal generated by the feedback biquad ANC filter are added by the mixer and transmits to the speaker for playing.

Abstract: A semiconductor device includes: M*1st conductors in a first layer of metallization (M*1st layer) and being aligned correspondingly along different corresponding ones of alpha tracks and representing corresponding inputs of a cell region in the semiconductor device; and M*2nd conductors in a second layer of metallization (M*2nd layer) aligned correspondingly along beta tracks, and the M*2nd conductors including at least one power grid (PG) segment and one or more of an output pin or a routing segment; and each of first and second ones of the input pins having a length sufficient to accommodate at most two access points; each of the access points of the first and second input pins being aligned to a corresponding different one of first to fourth beta tracks; and the PG segment being aligned with one of the first to fourth beta tracks.

Abstract: A waterproof device including a casing structure, a cover structure, a first engaging plate, a second engaging plate, a first elastic member, and a second elastic member is provided. The casing structure, on which the cover structure is disposed, includes a bottom plate, a first side plate, a second side plate, a third side plate, and a fourth side plate. The first engaging plate is disposed adjacent to the first side plate, and the first elastic member is connected therebetween. The second engaging plate is disposed adjacent to the second side plate, and the second elastic member is connected therebetween. The first engaging plate can reciprocate between a first positioning position and a first disengagement position relative to the first side plate, and the second engaging plate can reciprocate between a second positioning position and a second disengagement position relative to the second side plate.

Abstract: Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a method includes: evaluating a read disturbance level of an open block in a memory, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, managing each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.

Abstract: A flow battery system and methods are provided for eliminating crossover issues of active materials in redox flow batteries. A solid adsorbent with large specific surface area is disposed in an electrolyte of at least one half-cell, in contact with the electrolyte. During a charging process, the active material in a charged state is captured and stored on surfaces of the adsorbent, so that concentrations of the active material in the electrolyte in the charged state is reduced and the crossover is inhibited. During a discharging process, the active material is desorbed from the adsorbent to the electrolyte and pumped into the stack for reaction. The flow battery stack can have a microporous membrane separator. The electrolyte of the flow battery includes zinc iodide as active material and polyethylene glycol (PEG) as an additive.

Abstract: Disclosed is an electrical cell comprising a negative electrode, a positive electrode, and a deposition layer separating the positive electrode and a gas phase that supplies at least one reactive gas; wherein the deposition layer and the positive electrode are in communication with each other via electrolyte(s). Also disclosed is a battery comprising the electrical cell described above and a battery comprising: a cell comprising a negative electrode in communication with an anolyte and a positive electrode in communication with a catholyte; and a gas-liquid reactor, which is fed with the catholyte from the cell and a gas.

Abstract: Systems and techniques are described for generating a high dynamic range (HDR) image. An imaging system can be configured to receive a first image captured by an image sensor according to a first exposure time. The imaging system can generate a modified image based on the first image by modifying the first image using a gain setting to simulate a second exposure time based on exposure compensation. The imaging system generates a high dynamic range (HDR) image at least in part by merging multiple images. The multiple images include a second-exposure image that corresponds to the second exposure time. The second-exposure image can be the modified image. The second-exposure image can be based on the modified image, processed variant of the modified image processed for noise reduction based on one or more other images actually captured using the second exposure time.

Abstract: The disclosure relates to a molecular crowding type electrolyte that comprises at least one type of water-miscible/soluble polymer which acts as molecular crowding agent, a salt and a water. The disclosure also relates to a battery comprising the molecular crowding type electrolyte, and a method of using the molecular crowding electrolyte in electrochemical system such as battery that comprises an anode, a cathode and the molecular crowding type electrolyte.

Abstract: Methods, systems, and devices for anchor frame switching in an imaging system are described. A device may generate a pixel map based on a set of frames. A first subset of frames of the set of frames have a first exposure and a second subset of frames of the set of frames have a second exposure different than the first exposure. The device may determine a region of the pixel map representing motion between at least two frames of the first set of frames. If the device determines that a quantity of motion pixels in the region is higher than a threshold, the device may select a short exposure frame as an anchor frame, beginning at a later frame. Otherwise, the device may maintain using a long exposure frame as the anchor frame.

Abstract: Methods, systems, and devices for minimizing ghosting in high dynamic range image processing are described. The method may include capturing from a sensor of the device a downscaled first frame of a first exposure length and a downscaled second frame of a second exposure length that is longer than the first exposure length, identifying a highlight region associated with the downscaled first frame and a motion region associated with the downscaled first frame and with the downscaled second frame, blending the motion region in accordance with determining whether at least a portion of the motion region overlaps the highlight region, and incorporating the blending of the motion region in a set of full resolution frames.