Patents by Inventor Yi-Chung Lien

Yi-Chung Lien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a semiconductor structure having nanometer line-width
    Patent number: 7501348
    Abstract: A method for forming a semiconductor structure having a deep sub-micron or nano scale line-width is disclosed. Structure consisting of multiple photoresist layers is first formed on the substrate, then patterned using adequate exposure energy and development condition so that the bottom photoresist layer is not developed while the first under-cut resist groove is formed on top of the bottom photoresist layer. Anisotropic etching is then performed at a proper angle to the normal of the substrate surface, and a second resist groove is formed by the anisotropic etching. Finally, the metal evaporation process and the lift-off process are carried out and the ?-shaped metal gate with nano scale line-width can be formed.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: March 10, 2009
    Assignee: National Chiao Tung University
    Inventors: Szu-Hung Chen, Yi-Chung Lien, Yi Edward Chang
  • Method for forming a semiconductor structure having nanometer line-width
    Publication number: 20080254632
    Abstract: A method for forming a semiconductor structure having a deep sub-micron or nano scale line-width is disclosed. Structure consisting of multiple photoresist layers is first formed on the substrate, then patterned using adequate exposure energy and development condition so that the bottom photoresist layer is not developed while the first under-cut resist groove is formed on top of the bottom photoresist layer. Anisotropic etching is then performed at a proper angle to the normal of the substrate surface, and a second resist groove is formed by the anisotropic etching. Finally, the metal evaporation process and the lift-off process are carried out and the ?-shaped metal gate with nano scale line-width can be formed.
    Type: Application
    Filed: April 10, 2007
    Publication date: October 16, 2008
    Applicant: National Chiao Tung University
    Inventors: Szu-Hung Chen, Yi-Chung Lien, Edward Yi Chang