Patents by Inventor Yi-Dong Yan

Yi-Dong Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tungsten stud process for stacked via applications
    Patent number: 5591673
    Abstract: A tungsten stud, stacked via process, has been developed, featuring smooth planar topographies at all metal levels. The desirable topography is obtained by allowing the tungsten stud to reside at the same level, or slightly above the level, of the top surface of the via hole insulator. This is achieved via an insulator etch back procedure, performed after metal stud formation.
    Type: Grant
    Filed: July 5, 1995
    Date of Patent: January 7, 1997
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Ying-Chen Chao, Chih-Heng Shen, Yi-Dong Yan