Abstract: There is provided a silicon-based ferroelectric memory material, which includes a mesoporous silica with the nanopores thereon, and high-density arrays of nanocrystalline silicon or germanium quantum dots formed on the inner wall of the nanopores of the mesoporous silica. The silicon-based ferroelectric memory material is substantially composed of silicon and oxygen element, and the process for fabricating such a material is simple and can be done at the low temperature (<400° C.) so that the process for fabricating the silicon-based ferroelectric memory material is compatible with the semiconductor process, and is effective to prevent from cross pollution encountered in the prior art. The ferroelectric memory including the silicon-based ferroelectric memory material has the same advantages, such as high speed and long-life, as those of the conventional ferroelectric memory.