Abstract: The present invention discloses through-hole vertical semiconductor devices and chips. The structure of an embodiment of through-hole vertical semiconductor devices and chips having static protection diodes is the following: a semiconductor epitaxial layer is bonded to the first surface of a supporting chip with static protection diode; the first-type cladding layer of the semiconductor epitaxial layer is electrically connected to a first electrode on the second surface of the supporting chip via a current spreading layer, a patterned electrode, a half-through-hole-metal-plug and a through-hole-metal-plug; the second-type cladding layer of the semiconductor epitaxial layer is electrically connected to a second electrode on the second surface of the supporting chip via a reflector/Ohmic/bonding layer and at least one through-hole-metal-plug. An external power source is electrically connected to the first and second electrodes without wire bonding.