Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.

Abstract: A microwave heating sheet includes a substrate and a heating layer disposed on a first surface of the substrate. The heating layer includes a polar solvent that has a boiling point of not less than 100° C. and a polyelectrolyte that is dissolved in the polar solvent.

Abstract: Provided are a system for treating wastewater and a cleaning method thereof. The wastewater treatment system includes: a wastewater compartment, a first electrode, a second electrode, an acid compartment, a base compartment, an acid supply apparatus, a base supply apparatus, a control apparatus, and a power supply device. During the cleaning process, the power supply device provides reverse potential to the first and the second electrodes. The control apparatus shut off a first channel so that the acid supply apparatus provides an acid solution to the base compartment through a second channel, and shut off a third channel so that the base supply apparatus provides an alkaline solution to the acid compartment through a fourth channel, without shutting off the wastewater treatment system.

Abstract: Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.

Abstract: Provided are a system and a method of treating wastewater. The system includes a wastewater chamber, positive and negative electrode chambers, acid and basic solution chambers and a buffer chamber. The wastewater chamber receives wastewater containing a first ion. The positive and the negative electrode chambers are respectively on opposite sides of the wastewater chamber. The acid chamber is between the wastewater chamber and the positive electrode chamber. The basic chamber is between the wastewater chamber and the negative electrode chamber. The buffer chamber is between one of the acid and the basic chambers and the wastewater chamber, and receives the buffer solution containing the first ion. The interfaces between the wastewater chamber and the buffer chamber and between the one of the acid and the basic chambers and the buffer chamber are ion exchange membranes having the same electrical properties.

Abstract: Provided herein are pharmaceutical compositions containing (a) at least one liposome includes at least one vesicle-forming phospholipid; and (b) treprostinil encapsulated within the liposome. The ratio of treprostinil to phospholipid is equal to or higher than 0.035 and provides a controlled release of treprostinil. Also provided is the use of the pharmaceutical compositions to treat respiratory diseases.

Abstract: Provided herein are pharmaceutical compositions containing (a) at least one liposome includes at least one vesicle-forming phospholipid; and (b) treprostinil encapsulated within the liposome. The ratio of treprostinil to phospholipid is equal to or higher than 0.035 and provides a controlled release of treprostinil. Also provided is the use of the pharmaceutical compositions to treat respiratory diseases.

Abstract: The present invention relates to a pharmaceutical composition containing liposomes, said liposome comprise an external lipid bilayer; and an internal aqueous medium including a weak acid drug with a half-life of less than 2 hours. Also provided is the use of the pharmaceutical composition disclosed herein to treat pulmonary hypertension with reduced dosing frequency.

Abstract: Provided herein are pharmaceutical compositions containing at least one liposome, said liposome comprise an external lipid bilayer including at least one vesicle-forming phospholipid and less than 15 mole % of sterol; and an internal aqueous medium including a weak acid drug and weak acid salt. The pharmaceutical compositions reduce the burst release of the weak acid drug. Also provided is the use of the pharmaceutical composition disclosed herein to treat respiratory diseases and reduce the side effect of the weak acid drug.

Abstract: Provided herein are pharmaceutical compositions containing (a) at least one liposome includes at least one vesicle-forming phospholipid; and (b) treprostinil encapsulated within the liposome. The ratio of treprostinil to phospholipid is equal to or higher than 0.035 and provides a controlled release of treprostinil. Also provided is the use of the pharmaceutical compositions to treat respiratory diseases.

Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. First, a substrate having at least one transistor is provided. A first insulation layer is formed to cover the transistor. The first insulation layer is patterned to form at least one opening, wherein a part of the transistor is exposed by the opening. At last, an epitaxy is formed in the opening to cover the part of the transistor.

Abstract: The present invention relates to a pharmaceutical composition comprising a weak acid drug, with the use of a bicarbonate salt to achieve a high incorporation of the drug into the liposome and a better therapeutic efficacy. Also disclosed is a method for treating a respiratory disease using the pharmaceutical composition disclosed herein.

Abstract: A semiconductor device includes a transistor disposed on a substrate, a first insulation layer, a second insulation layer, an epitaxy and a conductive material. The first insulation layer is disposed on the substrate and protruding over the transistor. The first insulation layer has a recess to expose a top portion of the transistor. The second insulation layer is disposed on the first insulation layer and conforms to the recess and exposes the top portion of the transistor. The epitaxy is disposed in the recess of the first insulation layer and overlaps the top portion of the transistor. The epitaxy conforms to sidewalls of the recess of the first insulation layer. The conductive material is disposed in the recess of the first insulation layer.

Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar, and a doped region is disposed at a bottom of each pillar. An insulation layer is formed below each doped region. In addition, a gate and a gate dielectric are formed on the sidewalls of each pillar.

Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. First, a substrate having at least one transistor is provided. A first insulation layer is formed to cover the transistor. The first insulation layer is patterned to form at least one opening, wherein a part of the transistor is exposed by the opening. At last, an epitaxy is formed in the opening to cover the part of the transistor.

Abstract: A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.

Abstract: Provided is a method for fabricating a semiconductor device, which includes the following steps. A substrate having a plurality of pillars is provided, wherein a plurality of trenches are formed around each pillar, and a doped region is disposed at a bottom of each pillar. An insulation layer is formed below each doped region.

Abstract: A memory array includes a plurality of word lines extending along a first direction; a plurality of memory cells coupled to a first sub-bit line (SBL) extending along a second direction that is substantially orthogonal to the first direction; a first selector region disposed substantially in the middle of the first SBL thereby dividing the plurality of memory cells into two sub-groups, wherein the first selector region comprises at least one selector transistor that is coupled to the first SBL; and a main bit line (MBL) extending along the second direction and coupled to the selector transistor.

Abstract: A delivery system is provided. The delivery system includes a carrier or an active compound and a glutathione or a glutathione derivative grafted thereon. The invention also provides a compound including a moiety comprising a vitamin E derivative or a phospholipid derivative, a polyethylene glycol (PEG) or a polyethylene glycol derivative bonded thereto, and a glutathione (GSH) or a glutathione derivative bonded to the polyethylene glycol or the polyethylene glycol derivative.

Abstract: A method of manufacturing a circuit pattern with high aspect ratio is disclosed. A plurality of parallel lines and supporting lines intersecting the parallel lines are formed. Supporting isolation structures are then formed in the space between the parallel lines and the supporting line for supporting the parallel lines in a later etching process. The parallel lines and the supporting line are then disconnected after the etching process.