Abstract: The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device includes an optical pixel and an electronic circuit. The optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.

Abstract: The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device comprises an optical pixel and an electronic circuit, wherein the optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.

Abstract: The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device comprises an optical pixel and an electronic circuit, wherein the optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.

Abstract: The present invention discloses an image sensor device and a method for making an image sensor device. The image sensor device comprises an optical pixel and an electronic circuit, wherein the optical pixel includes: a substrate; an image sensor area formed in the substrate; a masking layer formed above the image sensor area, wherein the masking layer is formed during a process for forming the electronic circuit; and a light passage above the masking layer for increasing light sensing ability of the image sensor area.

Abstract: A method for preventing reworked photoresist from collapsing is described. After stripping undesired photoresist off a wafer and before re-performing a lithography process thereon, the wafer is placed in a chemical vapor deposition chamber filled with N2O gas for a predetermined time to form a nitrogen-rich native oxide layer on the surface of the wafer. Afterwards, reworked photoresist is formed on the nitrogen-rich native oxide layer. The nitrogen-rich native oxide layer restores the moisture and the reflectivity of the surface of the wafer to a predetermined range before performing the photoresist reworking process. Hence, the invention prevents the reworked photoresist from collapsing and improves the fabrication yield.