Abstract: Automatic license plate recognition occurs when a light sensor that continually captures video detects motion as a vehicle is driven through a gate. The light sensor detects the vehicle and license plate in the video stream captured by the light sensor. An algorithm associated with the video stream of the light sensor is trained to detect license plates. The light sensor starts executing the recognition algorithm when it detects motion. Recognition of characters in the license plate is based upon an aggregation of several captured video frames in which a license plate is detected.

Abstract: A method, apparatus and system for training an embedding space for content comprehension and response includes, for each layer of a hierarchical taxonomy having at least two layers including respective words resulting in layers of varying complexity, determining a set of words associated with a layer of the hierarchical taxonomy, determining a question answer pair based on a question generated using at least one word of the set of words and at least one content domain, determining a vector representation for the generated question and for content related to the at least one content domain of the question answer pair, and embedding the question vector representation and the content vector representations into a common embedding space where vector representations that are related, are closer in the embedding space than unrelated embedded vector representations. Requests for content can then be fulfilled using the trained, common embedding space.

Abstract: Provided is a semiconductor super junction power device. The semiconductor super junction power device includes an MOSFET cell array composed of multiple super junction MOSFET cells. Each of multiple MOSFET cells includes a p-type body region located at the top of an n-type drift region, a p-type columnar doping region located below the p-type body region, an n-type source region located in the p-type body region, a gate dielectric layer located above the p-type body region, a gate electrode located above the p-type body region, an n-type floating gate located above the p-type body region and an opening located in the gate dielectric layer, where in a lateral direction, the gate electrode is located on one side close to the n-type source region; an opening located in the gate dielectric layer, where the n-type floating gate contacts the p-type body region through the opening to form a p-n junction diode.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate and p-type body regions are disposed at a top of the semiconductor substrate. The p-type body regions are in contact with an emitter metal layer. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the at least one first region is a second region. Each of p-type body regions in the at least one first region is provided with a first p-type body region contact region, and the emitter metal layer is in contact with the first p-type body region contact region and forms an ohmic contact with the first p-type body region contact region. Each of p-type body regions in the second region forms no ohmic contact with the emitter metal layer.

Abstract: An electrical connector includes: an insulating housing having two side walls defining signal passageways and grounding passageways; two rows of terminals including signal terminals in the signal passageways and grounding terminals in the grounding passageways, each terminal having a retained portion and an elastic arm with a contacting portion extending into the card slot; a one-piece inserting member assembled in the insulating housing, the inserting member defining first inserting portions in the signal passageways and made from insulating plastic, and second inserting portions in the grounding passageways and at least partly made from conductive plastic, the second inserting portions mechanically connecting the grounding terminals; and a metallic member retained in the inserting member, wherein the metallic member defines two rows of grounding fingers, the grounding fingers are located in corresponding second inserting portions respectively and directly connect or face but not directly connect with corres

Abstract: A tire mounting apparatus includes a rim positioning mechanism, a wheel support mechanism and a mounting frame that are disposed on a base in sequence, and a tire pressing mechanism disposed on the mounting frame. The rim positioning mechanism is configured to position a hub of a rim. The wheel support mechanism is configured to support a side peripheral edge of a wheel. The tire pressing mechanism is configured to press a side peripheral edge of a tire for pressing a bead of the tire into the rim. The operation is simple and labor-saving. The tire mounting efficiency can be improved and the labor intensity can be reduced.

Abstract: Methods of the invention encompass delivery of nucleic acid sequences encoding ABCD1 for the treatment of X-linked Adrenoleukodystrophy (X-ALD), e.g., for Adrenomyeloneuropathy (AMN).

Abstract: An electrical connector includes: an insulating housing having a mating face, a card slot recessed from the mating face with a floor face facing the mating face, and two side walls located at opposite sides of the card slot; and two terminal modules retained in the insulating housing, each terminal module including a row of terminals, a conductive plastic, and an insulating plastic, the row of terminals including plural signal terminals and plural grounding terminals, wherein the grounding terminals are partially retained in the conductive plastic and the insulating plastic surrounds and retains the signal terminals and the conductive plastic, thereby forming the terminal module.

Abstract: A biomolecular characteristic identification method includes: breeding a plurality of Taiwan Tilapias in a predetermined environment to obtain a plurality of baited Taiwan Tilapias; seeking at least one nucleotide mark in the baited Taiwan Tilapias to obtain at least one feature sequence marker therefrom; producing at least one design of primer pair according to the feature sequence marker for identification; and identifying an unknown DNA sample of the baited Taiwan Tilapias with the at least one primer pair in a biomolecular tracing procedure to obtain an identification result.

Abstract: An electrical connector includes: an insulating housing defining a mating face, a card slot, and two side walls at opposite sides of the card slot, each of the side walls defining signal passageways and grounding passageways; two rows of terminals located on the side walls and each row of terminal including signal terminals in the signal passageways and grounding terminals in the grounding passageways, the terminals including retaining portions retained in the passageways and elastic arms with contacting portions extending into the card slot; and a one-piece inserting member assembled in the insulating housing, wherein the inserting member defines plural first inserting portions inserted in the signal passageways and plural second inserting portions inserted in the grounding passageways, the second inserting portions contact corresponding grounding terminals, respectively, to establish a grounding path.

Abstract: An exogenous biomolecular tracing method includes: extracting a nucleotide marker from a marker source organism; combining a basic material with the nucleotide marker to form a nucleotide marked material; exogenously combining an aquatic creature or an aquatic product to form an exogenously-marked aquatic creature or an exogenously-marked aquatic product; and identifying a DNA sample from the exogenously-marked aquatic creature or the exogenously-marked aquatic product with at least one primer pair in an exogenous biomolecular tracing procedure to obtain an exogenously-marked identification result.

Abstract: Provided is a semiconductor power device. The semiconductor power device includes a semiconductor substrate and p-type body regions disposed in the semiconductor substrate. The p-type body regions are in contact with a source metal layer. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the at least one first region is a second region. A p-type body region of p-type body regions in the first region is provided with a first p-type body region contact region, and the source metal layer is in contact with the first p-type body region contact region to form an ohmic contact. Each of p-type body regions in the second region forms no ohmic contact with the source metal layer.

Abstract: The silicon carbide device includes a gate trench, a source trench, a gate, a source and a p-type well region. The gate trench and the source trench are disposed in a silicon carbide substrate and alternately spaced apart. The gate disposed in the gate trench is isolated from a second n-type silicon carbide layer by a first insulating layer, and the gate is isolated from a p-type silicon carbide layer and a third n-type silicon carbide layer by a second insulating layer. The source disposed in the source trench is connected to the p-type silicon carbide layer and the third n-type silicon carbide layer, and the source is isolated from the second n-type silicon carbide layer by a third insulating layer. The p-type well region is disposed at a bottom of the source trench, where the p-type well region is connected to the source.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, p-type body regions disposed in the semiconductor substrate, and p-type columns. The p-type body regions are in contact with a source metal layer. The p-type columns are disposed in the semiconductor substrate, each of the p-type columns is below a respective one of the p-type body regions. The semiconductor substrate includes at least one first region, and a region of the semiconductor substrate outside the at least one first region is a second region. A p-type body region of p-type body regions in the first region is provided with a first p-type body region contact region, and the source metal layer is in contact with the first p-type body region contact region to form an ohmic contact. Each of p-type body regions in the second region forms no ohmic contact with the source metal layer.

Abstract: A gate trench and a source trench are formed simultaneously in the same etching process, a p-type semiconductor layer and a p-type doped region can be contacted in a self-aligned manner in the source trench, and the process is simple. A first insulating layer and a first gate are formed in a lower part of the gate trench, and a second insulating layer and a second gate are formed in an upper part of the gate trench so that the thick first insulating layer can protect the second gate from being easily broken down, the first gate can increase an electric field near a bottom of the gate trench, and thus a voltage withstand level of the semiconductor device can be improved. A bottom of the source trench can penetrate deep into a second n-type semiconductor layer .

Abstract: Provided is an insulated gate bipolar transistor power device. The IGBT power device includes a gate dielectric layer located above the two p-type body regions and the n-type drift region between the two p-type body regions, an n-type floating gate located above the gate dielectric layer; a gate located above the gate dielectric layer and the n-type floating gate; an insulating dielectric layer between the gate and the n-type floating gate; a first opening located in the gate dielectric layer, where the n-type floating gate is in contact with one of the two p-type body regions through the first opening to form a p-n junction diode; and a second opening located in the gate dielectric layer, where the n-type floating gate is in contact with the other of the two p-type body regions through the second opening to form the p-n junction diode.

Abstract: Disclosed is a compound capable of inhibiting interleukin 17A (IL-17A), which is represented by formula (I). An application of the compound or a stereoisomer thereof in the preparation of drugs for inhibiting IL-17A is also provided.

Abstract: The invention relates to a method for predicting benchmark value of unit equipment based on XGBoost algorithm and a system thereof, wherein the method comprises the following steps: the historical operation data of unit equipment is obtained, the data is preprocessed, and a data set containing a plurality of samples is constructed, and each sample includes the benchmark value of a plurality of parameters of the equipment corresponding to a plurality of features; RF out-of-bag estimation is used for feature importance calculation to eliminate the features with low importance; the data is standardized to eliminate the dimensional effects among features; the data set is input to construct an XGBoost model, and Bayesian super parameter optimization is conducted to obtain the prediction model of benchmark values; and the real-time data of equipment operation is input, and the benchmark values of various equipment parameters are predicted by the prediction model of benchmark values.

Abstract: Provided is an IGBT device. The IGBT device includes an MOSFET cell array, where each MOSFET cell includes a p-type body region located at the top of an n-type drift region, an n-type emitter region located in the p-type body region, and a gate dielectric layer, a gate electrode and an n-type floating gate which are located above the p-type body region. The gate electrode is located above the gate dielectric layer, the n-type floating gate is located above the gate dielectric layer, and the gate electrode acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.