Patents by Inventor Yi-Han Liao
Yi-Han Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240339467Abstract: Some embodiments relate to an IC device, including a first chip comprising a plurality of pixel blocks respectively including one of a first plurality of conductive pads, the plurality of pixel blocks arranged in rows extending in a first direction and columns extending in a second direction perpendicular to the first direction; a second chip bonded to the first chip at a bonding interface, where the second chip comprises a second plurality of conductive pad recessed and contacting the first plurality of conductive pads along the bonding interface; and a first corrugated shield line having outermost edges set-back along the second direction from outermost edges of a first row of the plurality of pixel blocks, the first corrugated shield line being arranged within a first dielectric layer and laterally separating neighboring ones of the first plurality of conductive pads within the first row of the plurality of pixel blocks.Type: ApplicationFiled: April 7, 2023Publication date: October 10, 2024Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Kuan-Chieh Huang, Wei-Cheng Hsu, Hao-Lin Yang, Yi-Han Liao, Chen-Jong Wang, Dun-Nian Yaung
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Storage medium, expansion base and operation method thereof combined with portable electronic device
Patent number: 11164538Abstract: The disclosure provides a storage medium, an expansion base and an operation method thereof combined with a portable electronic device. The portable electronic device is pre-installed with an application program and includes a touch screen. The expansion base is paired with the portable electronic device and accommodates the portable electronic device. When the portable electronic device is accommodated inside the expansion base, a touch window on the surface of the expansion base exposes at least a portion of the touch screen, and the portable electronic device executes the application program to automatically adjust a size or a display position of a display image of the touch screen to correspond to the touch window.Type: GrantFiled: May 13, 2019Date of Patent: November 2, 2021Assignee: COMPAL ELECTRONICS, INC.Inventors: Che-Wei Liang, Xiu-Yu Lin, Yi-Han Liao, Sheng-Chieh Tang, Chieh-Yu Chan, Chiao-Tsu Chiang, Wen-Yi Chiu, Wei-Chih Hsu, Li-Fang Chen, Yi-Jing Lin -
STORAGE MEDIUM, EXPANSION BASE AND OPERATION METHOD THEREOF COMBINED WITH PORTABLE ELECTRONIC DEVICE
Publication number: 20190371261Abstract: The disclosure provides a storage medium, an expansion base and an operation method thereof combined with a portable electronic device. The portable electronic device is pre-installed with an application program and includes a touch screen. The expansion base is paired with the portable electronic device and accommodates the portable electronic device. When the portable electronic device is accommodated inside the expansion base, a touch window on the surface of the expansion base exposes at least a portion of the touch screen, and the portable electronic device executes the application program to automatically adjust a size or a display position of a display image of the touch screen to correspond to the touch window.Type: ApplicationFiled: May 13, 2019Publication date: December 5, 2019Applicant: COMPAL ELECTRONICS, INC.Inventors: Che-Wei Liang, Xiu-Yu Lin, Yi-Han Liao, Sheng-Chieh Tang, Chieh-Yu Chan, Chiao-Tsu Chiang, Wen-Yi Chiu, Wei-Chih Hsu, Li-Fang Chen, Yi-Jing Lin -
Patent number: 10192826Abstract: A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.Type: GrantFiled: December 26, 2017Date of Patent: January 29, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Kuo-Chin Hung, Min-Chuan Tsai, Wei-Chuan Tsai, Yi-Han Liao, Chun-Tsen Lu, Fu-Shou Tsai, Li-Chieh Hsu
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Publication number: 20180138125Abstract: A layout structure including a conductive structure is provided. The layout structure includes a dielectric layer formed on a substrate and a conductive structure formed in the dielectric layer. And the conductive structure further includes a barrier layer, a metal layer formed within the barrier layer, and a high resistive layer sandwiched in between the barrier layer and the metal layer.Type: ApplicationFiled: December 26, 2017Publication date: May 17, 2018Inventors: Kun-Ju Li, Kuo-Chin Hung, Min-Chuan Tsai, Wei-Chuan Tsai, Yi-Han Liao, Chun-Tsen Lu, Fu-Shou Tsai, Li-Chieh Hsu
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Patent number: 9966263Abstract: A method of fabricating fin structure is provided. A patterned catalyst layer and a patterned passivation layer extending along a first direction are formed on a substrate. The patterned passivation layer is located on the patterned catalyst layer. A carbon layer is formed on at least one side of the patterned catalyst layer and includes hollow carbon tubes arranged along the first direction. Each hollow carbon tube extends along a second direction. A removal process is performed to remove the top and a portion of the bottom of each hollow carbon tube closest to the substrate, so that remnants are left and serve as a mask layer. Two adjacent remnants form a stripe pattern extending along the second direction. The patterned passivation layer and the patterned catalyst layer are removed. The pattern of the mask layer is transferred to the substrate to form fin structures. The mask layer is removed.Type: GrantFiled: May 4, 2017Date of Patent: May 8, 2018Assignee: United Microelectronics Corp.Inventors: Kun-Ju Li, Li-Chieh Hsu, Yi-Han Liao, Chun-Tsen Lu, Chih-Hsun Lin, Hsin-Jung Liu
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Patent number: 9887158Abstract: A conductive structure includes a substrate including a first dielectric layer formed thereon, a first trench formed in the first dielectric layer, a first barrier layer formed in the first trench, a first nucleation layer formed on the first barrier layer, a first metal layer formed on the first nucleation layer, and a first high resistive layer sandwiched in between the first barrier layer and the first metal layer.Type: GrantFiled: November 2, 2016Date of Patent: February 6, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Kuo-Chin Hung, Min-Chuan Tsai, Wei-Chuan Tsai, Yi-Han Liao, Chun-Tsen Lu, Fu-Shou Tsai, Li-Chieh Hsu
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Patent number: 9735015Abstract: A method of manufacturing a semiconductor structure, comprising: providing a preliminary structure having a first region and a second region and comprising a plurality of first trenches in the first region; forming a metal layer filling the first trenches covering on the preliminary structure, wherein the metal layer comprises a concave portion in the second region and the concave portion defines an opening; forming a metal nitride layer on the metal layer by an nitride treatment; and performing a planarization process to remove the metal nitride layer and a portion of the metal layer to expose the preliminary structure.Type: GrantFiled: December 5, 2016Date of Patent: August 15, 2017Assignee: UNITED MICROELECTRONICS CORPORATIONInventors: Kun Ju Li, Hsin Jung Liu, Wei-Chuan Tsai, Min-Chuan Tsai, Yi Han Liao, Chun-Tsen Lu, Chun-Lin Chen, Jui-Ming Yang, Kuo-Chin Hung
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Patent number: 9444216Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: GrantFiled: November 6, 2013Date of Patent: September 13, 2016Assignee: National Taiwan UniversityInventors: Kuang-Yu Hsu, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang
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Patent number: 9153933Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: GrantFiled: November 6, 2013Date of Patent: October 6, 2015Assignee: National Taiwan UniversityInventors: Kuang-Yu Hsu, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang
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Publication number: 20140072010Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: ApplicationFiled: November 6, 2013Publication date: March 13, 2014Applicant: NATIONAL TAIWAN UNIVERSITYInventors: KUANG-YU HSU, DONG-YO JHENG, YI-HAN LIAO, SHENG-LUNG HUANG
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Publication number: 20140060420Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: ApplicationFiled: November 6, 2013Publication date: March 6, 2014Applicant: NATIONAL TAIWAN UNIVERSITYInventors: KUANG-YU HSU, DONG-YO JHENG, YI-HAN LIAO, SHENG-LUNG HUANG
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Patent number: 8625948Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The crystal fiber is enclosed by a glass capillary and is grown into a single cladding crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single cladding Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: GrantFiled: December 14, 2010Date of Patent: January 7, 2014Assignee: National Taiwan UniversityInventors: Kuang-Yu Hsu, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang
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Publication number: 20120051082Abstract: The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The crystal fiber is enclosed by a glass capillary and is grown into a single cladding crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single cladding Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light.Type: ApplicationFiled: December 14, 2010Publication date: March 1, 2012Inventors: Kuang-Yu HSU, Dong-Yo Jheng, Yi-Han Liao, Sheng-Lung Huang