Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: The present disclosure provides a DC motor driving system including a DC motor, a power supply device, a switch circuit, and a microprocessor. The power supply device provides an input electrical energy. The switch circuit receives the input electrical energy and outputs a motor electrical energy, which includes a motor power and a motor voltage, to the DC motor. The DC motor driving system switchably works in a constant-voltage mode, a first variable-voltage mode, or a second variable-voltage mode. In the constant-voltage mode, the input electrical energy remains unchanged. In the first variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for increasing the motor voltage and the motor power. In the second variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for decreasing the motor voltage and keeping the motor power unchanged.

Abstract: Techniques involve: receiving an input/output request for data stored in a second storage means of a storage system; determining a use frequency of the data; moving the data from the second storage means into a first storage means in the storage system if it is determined that the use frequency is higher than a threshold frequency and the input/output request is a read request, an input/output speed of the first storage means being higher than that of the second storage means; and writing, if it is determined that the use frequency is higher than the threshold frequency and the input/output request is a write request that includes update data, the update data as the data into the first storage means. Accordingly, the storage performance can be improved without affecting the input/output traffic, which not only can reduce the operating cost, but also can improve user experience.

Abstract: Techniques involve: receiving an input/output request for data stored in a second storage means of a storage system; determining a use frequency of the data; moving the data from the second storage means into a first storage means in the storage system if it is determined that the use frequency is higher than a threshold frequency and the input/output request is a read request, an input/output speed of the first storage means being higher than that of the second storage means; and writing, if it is determined that the use frequency is higher than the threshold frequency and the input/output request is a write request that includes update data, the update data as the data into the first storage means. Accordingly, the storage performance can be improved without affecting the input/output traffic, which not only can reduce the operating cost, but also can improve user experience.

Abstract: A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.

Abstract: A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.