Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A display panel and a manufacturing method thereof are provided. The display panel includes a substrate, an active element, a driving circuit element, a first connection circuit, a second connection circuit and a conductive connector. The substrate has a first surface and a second surface opposite to the first surface. The active element is disposed on the first surface. The driving circuit element is disposed on the second surface and is overlapped with the active element. The first connection circuit is disposed on the first surface and is connected to the active element. The second connection circuit is disposed on the second surface and is connected to the driving circuit element. The conductive connector penetrates through the substrate and two ends of the conductive connector are electrically connected to the first connection circuit and the second connection circuit, respectively.

Abstract: Provided is a semiconductor device including a substrate, a first interconnection structure, and an MTJ device. The first interconnection structure is disposed on the substrate. The MTJ device is reversely bonded to the first interconnection structure. The MTJ device includes a first electrode layer, a second electrode layer and an MTJ stack structure. The first electrode layer is bonded to the first interconnect structure. The second electrode layer is located above the first electrode layer. The MTJ stack structure is located between the first and second electrode layers. The MTJ stack structure includes a first barrier layer, a free layer and a reference layer. The first barrier layer is located between the first and second electrode layers. The free layer is located between the first barrier layer and the first electrode layer. The reference layer is located between the first barrier layer and the second electrode layer.

Abstract: A method for manufacturing a play-of-color article includes the steps of: (a) providing a first mixture that contains a solvent and a plurality of functionalized colloidal particles; (b) replacing the solvent of the first mixture with a polymer solution that contains polymers, thereby obtaining a second mixture; (c) adding an initiator to the second mixture to obtain a third mixture, followed by injecting the third mixture into a mold and disturbing the third mixture, so that the third mixture is formed with a pattern; (d) leaving the third mixture to stand, so as to allow the functionalized colloidal particles therein to self-assemble to form a crystalline arrangement, thereby obtaining a fourth mixture; and (e) subjecting the polymers in the fourth mixture to a cross-linking reaction, thereby obtaining the play-of-color article. A play-of-color article manufactured by the method, and a play-of-color product including the play-of-color article are also provided.

Abstract: The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.

Abstract: The disclosure provides an eye state assessment method and an electronic device. The method includes: obtaining an optic disc image area from a first fundus photography and generating multiple optic cup-to-disc ratio assessment results by multiple first models based on the optic disc image area; obtaining a first assessment result of an eye based on the optic cup-to-disc ratio assessment results; performing multiple data augmentation operations on the first fundus photography to generate multiple second fundus photographies; generating multiple retinal nerve fiber layer (RNFL) defect assessment results by multiple second models based on the second fundus photographies; obtaining a second assessment result of the eye based on the RNFL defect assessment results; and obtaining an optic nerve assessment result of the eye based on the first assessment result and the second assessment result.

Abstract: A frame rate control method is provided. A primary scenario and a non-primary scenario are identified according to two or more windows displayed on a screen. Each of the primary scenario and the non-primary scenario is performed by an individual application. A frame rate of the non-primary scenario is decreased when a performance index indicates that a first condition is present. The application corresponding to the non-primary scenario is disabled when the performance index indicates that a second condition is present after decreasing the frame rate of the non-primary scenario, so as to remove the window corresponding to the non-primary scenario from the screen.

Abstract: The invention provides an immersion fluid module including a tank, a heat exchanger, a condenser, and at least one pipe. The tank contains a first fluid. An electronic device is disposed in the tank and is at least partially immersed in the first fluid in a liquid state. The heat exchanger is disposed in the tank and is at least partially immersed in the first fluid in the liquid state. The condenser is disposed in the tank. The pipe connects the heat exchanger and the condenser. A second fluid is provided to the pipe, and a temperature of the second fluid is higher than a preset value. When an ambient temperature of the electronic device is lower than the preset value, the second fluid flows through the heat exchanger to raise the ambient temperature of the electronic device. The invention also provides a server system.

Abstract: A device for performing timing analysis used in a programmable logic array system is provided. The device comprises first and second basic I/O terminals, a channel multiplexer, high-speed I/O terminals, a sampling module and a timing analysis module. The first basic I/O terminals receive under-test signals from an under-test unit. The channel multiplexer receives the under-test signals from the first basic I/O terminals to select at least a group of the under-test signals to be outputted to the second basic I/O terminals. The high-speed I/O terminals has a logic level analyzing speed higher than that of the first and second basic I/O terminals. The sampling module receives the group of under-test signals from the high-speed I/O terminals and samples the group of under-test signals to generate a sample result. The timing analysis module performs timing analysis and measurement according to the sample result.

Abstract: A device for performing timing analysis used in a programmable logic array system is provided. The device comprises first and second basic I/O terminals, a channel multiplexer, high-speed I/O terminals, a sampling module and a timing analysis module. The first basic I/O terminals receive under-test signals from an under-test unit. The channel multiplexer receives the under-test signals from the first basic I/O terminals to select at least a group of the under-test signals to be outputted to the second basic I/O terminals. The high-speed I/O terminals has a logic level analyzing speed higher than that of the first and second basic I/O terminals. The sampling module receives the group of under-test signals from the high-speed I/O terminals and samples the group of under-test signals to generate a sample result. The timing analysis module performs timing analysis and measurement according to the sample result.