Patents by Inventor Yi-Heng Liu

Yi-Heng Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240124163
    Abstract: A magnetic multi-pole propulsion array system is applied to at least one external cathode and includes a plurality of magnetic multi-pole thrusters connected adjacent to each other. Each magnetic multi-pole thruster includes a propellant provider, a discharge chamber, an anode and a plurality of magnetic components. The propellant provider outputs propellant. The discharge chamber is connected with the propellant provider to accommodate the propellant. The anode is disposed inside the discharge chamber to generate an electric field. The plurality of magnetic components is respectively disposed on several sides of the discharge chamber. One of the several sides of the discharge chamber of the magnetic multi-pole thruster is applied for one side of a discharge chamber of another magnetic multi-pole thruster.
    Type: Application
    Filed: December 19, 2022
    Publication date: April 18, 2024
    Applicant: National Cheng Kung University
    Inventors: Yueh-Heng Li, Yu-Ting Wu, Chao-Wei Huang, Wei-Cheng Lo, Hsun-Chen Hsieh, Ping-Han Huang, Yi-Long Huang, Sheng-Wen Liu, Wei-Cheng Lien
  • Patent number: 10796730
    Abstract: A semiconductor memory device includes a memory bank of an open bit-line architecture and a word-line decoder. The memory bank is divided into a plurality of memory blocks in a bit-line direction, and each of the memory blocks includes a plurality of word lines, a plurality of bit lines and a plurality of memory cells which are grouped into a plurality of memory sections including two edge memory sections and at least one non-edge memory section. The word-line decoder generates a plurality of word-line enabling signals based on a plurality of address signals and activates one of the word lines for each of the two edge memory sections of one of the memory blocks and one of the word lines for one of the at least one non-edge memory section of each of the other memory blocks concurrently in an active mode according to the word-line enabling signals.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: October 6, 2020
    Assignee: Elite Semiconductor Memory Technology Inc.
    Inventors: Yi Heng Liu, Jian-Sing Liou
  • Publication number: 20200294570
    Abstract: A semiconductor memory device includes a memory bank of an open bit-line architecture and a word-line decoder. The memory bank is divided into a plurality of memory blocks in a bit-line direction, and each of the memory blocks includes a plurality of word lines, a plurality of bit lines and a plurality of memory cells which are grouped into a plurality of memory sections including two edge memory sections and at least one non-edge memory section. The word-line decoder generates a plurality of word-line enabling signals based on a plurality of address signals and activates one of the word lines for each of the two edge memory sections of one of the memory blocks and one of the word lines for one of the at least one non-edge memory section of each of the other memory blocks concurrently in an active mode according to the word-line enabling signals.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 17, 2020
    Inventors: Yi Heng LIU, Jian-Sing LIOU
  • Patent number: 8368367
    Abstract: The invention provides a voltage regulator including a voltage divider and a power supply. The voltage divider circuit includes a first, second, third PMOS transistors, a first NMOS transistor, a pull down circuit, and a switching capacitor circuit. The pull down circuit includes a plurality of switches controlled by a pull down control signal. The switching capacitor circuit controlled by a first control pulse includes a capacitor and provides the capacitor connected to the dividing voltage for a short period while the power supply starts up to provide the input voltage. The power supply includes a comparator and a power voltage switch. The comparator compares the dividing voltage and a reference voltage and outputs a comparison result correspondingly. The power voltage switch is controlled by the comparison result to provide the input voltage from a power voltage.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: February 5, 2013
    Assignee: Elite Semiconductor Memory Technology Inc.
    Inventor: Yi-Heng Liu
  • Patent number: 8330500
    Abstract: A comparator comprises a current mirror, a differential input pair, and a auxiliary circuit. The current mirror has a biasing end coupled to a power voltage, a first end, and a current outputting end coupled to an output node of the comparator. The differential input pair has a first and second input ends for respectively receiving a first voltage and a second voltage, a second and third ends, and a ground end, wherein the third end is coupled to the first end. The auxiliary circuit is coupled between the output node and the second end, and provides a minimum voltage of a comparison result output at the output node. The comparison result is the power voltage when the first voltage is larger than the second voltage, and the comparison result is the minimum voltage when the first voltage is less than the second voltage.
    Type: Grant
    Filed: November 25, 2010
    Date of Patent: December 11, 2012
    Assignee: Elite Semiconductor Memory Technology Inc.
    Inventor: Yi-Heng Liu
  • Publication number: 20120146601
    Abstract: The invention provides a voltage regulator including a voltage divider and a power supply. The voltage divider circuit includes a first, second, third PMOS transistors, a first NMOS transistor, a pull down circuit, and a switching capacitor circuit. The pull down circuit includes a plurality of switches controlled by a pull down control signal. The switching capacitor circuit controlled by a first control pulse includes a capacitor and provides the capacitor connected to the dividing voltage for a short period while the power supply starts up to provide the input voltage. The power supply includes a comparator and a power voltage switch. The comparator compares the dividing voltage and a reference voltage and outputs a comparison result correspondingly. The power voltage switch is controlled by the comparison result to provide the input voltage from a power voltage.
    Type: Application
    Filed: December 14, 2010
    Publication date: June 14, 2012
    Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
    Inventor: Yi-Heng Liu
  • Publication number: 20120133396
    Abstract: A comparator comprises a current mirror, a differential input pair, and a auxiliary circuit. The current mirror has a biasing end coupled to a power voltage, a first end, and a current outputting end coupled to an output node of the comparator. The differential input pair has a first and second input ends for respectively receiving a first voltage and a second voltage, a second and third ends, and a ground end, wherein the third end is coupled to the first end. The auxiliary circuit is coupled between the output node and the second end, and provides a minimum voltage of a comparison result output at the output node. The comparison result is the power voltage when the first voltage is larger than the second voltage, and the comparison result is the minimum voltage when the first voltage is less than the second voltage.
    Type: Application
    Filed: November 25, 2010
    Publication date: May 31, 2012
    Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
    Inventor: Yi-Heng Liu
  • Patent number: 8076980
    Abstract: A temperature-compensated ring oscillator includes a control signal generator and a voltage controlled oscillator. The control signal generator is configured to generate at least one control signal, and includes at least one first resistor and second resistor. A first temperature coefficient of the first resistor is negative, and a second temperature coefficient of the second resistor is positive. The voltage controlled oscillator receives the control signal, outputs an oscillation signal, and has (2k+1) cascaded inverter units, where k?1. Each of the inverter units includes a first transistor, a second transistor and an inverter. The first transistor has a drain coupled to a first supply voltage and a gate to receive the control signal. The second transistor has a source to receive a second supply voltage and a gate to receive the control signal. The inverter is coupled between the first and the second transistors.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: December 13, 2011
    Assignee: Elite Semiconductor Memory Technology Inc.
    Inventor: Yi-Heng Liu
  • Publication number: 20110175684
    Abstract: A temperature-compensated ring oscillator includes a control signal generator and a voltage controlled oscillator. The control signal generator is configured to generate at least one control signal, and includes at least one first resistor and second resistor. A first temperature coefficient of the first resistor is negative, and a second temperature coefficient of the second resistor is positive. The voltage controlled oscillator receives the control signal, outputs an oscillation signal, and has (2k+1) cascaded inverter units, where k?1. Each of the inverter units includes a first transistor, a second transistor and an inverter. The first transistor has a drain coupled to a first supply voltage and a gate to receive the control signal. The second transistor has a source to receive a second supply voltage and a gate to receive the control signal. The inverter is coupled between the first and the second transistors.
    Type: Application
    Filed: January 19, 2010
    Publication date: July 21, 2011
    Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
    Inventor: Yi-Heng Liu
  • Patent number: 7759986
    Abstract: An integrated circuit comprises a first input node and a second input node, an output node; a first output transistor of a first type and a second output transistor of a second type, and a first clamping transistor of the second type and a second clamping transistor of a second type. The first clamping transistor, the first output transistor, the second clamping transistor, and the second output transistor are coupled in series across a first power supply terminal and a second power supply terminal. The first input node is coupled to a gate of the first output transistor. The second input node is coupled to a gate of the second output transistor. The output node is coupled to a common node of the first output transistor and the second clamping transistor. A gate of the first clamping transistor is coupled to a first reference voltage. A gate of the second clamping transistor is coupled to a second reference voltage.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: July 20, 2010
    Assignee: Elite Semiconductor Memory Technology Inc
    Inventors: Dar-Woei Wang, Yi-Heng Liu
  • Publication number: 20090231016
    Abstract: An integrated circuit comprises a first input node and a second input node, an output node; a first output transistor of a first type and a second output transistor of a second type, and a first clamping transistor of the second type and a second clamping transistor of a second type. The first clamping transistor, the first output transistor, the second clamping transistor, and the second output transistor are coupled in series across a first power supply terminal and a second power supply terminal. The first input node is coupled to a gate of the first output transistor. The second input node is coupled to a gate of the second output transistor. The output node is coupled to a common node of the first output transistor and the second clamping transistor. A gate of the first clamping transistor is coupled to a first reference voltage. A gate of the second clamping transistor is coupled to a second reference voltage.
    Type: Application
    Filed: May 22, 2009
    Publication date: September 17, 2009
    Applicant: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC.
    Inventors: Dar-Woei Wang, Yi-Heng Liu
  • Publication number: 20060152255
    Abstract: An integrated circuit comprises a first input node and a second input node, an output node; a first output transistor of a first type and a second output transistor of a second type, and a first clamping transistor of the second type and a second clamping transistor of the second type. The first clamping transistor, the first output transistor, the second clamping transistor, and the second output transistor are coupled in series across a first power supply terminal and a second power supply terminal. The first input node is coupled to a gate of the first output transistor. The second input node is coupled to a gate of the second output transistor. The output node is coupled to a common node of the first output transistor and the second clamping transistor. A gate of the first clamping transistor is coupled to a first reference voltage. A gate of the second clamping transistor is coupled to a second reference voltage.
    Type: Application
    Filed: January 13, 2005
    Publication date: July 13, 2006
    Inventors: Dar-Woei Wang, Yi-Heng Liu