Abstract: A foreign object detecting system and a method are provided. A control circuit controls a light transmitter and a light receiver. The light transmitter is disposed adjacent to a detected object and emits a light signal toward the detected object. The light receiver is disposed adjacent to the detected object in a path along which the light signal reflected by the detected object travels. The light receiver receives the light signal reflected to the light receiver. In a pre-operation, the control circuit defines the light signal received by the light receiver when the foreign object is not on the detected object as a first reflected light signal. In a detection operation, the control circuit determines that a difference exists between the light signal currently received by the light receiver and the first reflected light signal, the control circuit determines that the foreign object is on the detected object.

Abstract: A process is disclosed for purification of silicon source material including trichlorosilane. First, the silicon source material in liquid state with impurities vapor and the other chlorosilane or silane are passing a first high gravity rotating packed bed with porous metal, at a temperature lower than the boiling point of the silicon source material, the impurities vapor and the other chlorosilane or silane are separated from the liquid silicon source material; second, the silicon source material in liquid state is fed to a second high gravity rotating packed bed, oxygen is also fed to the second high gravity rotating packed bed to form impurity-containing siloxane complexes with higher boiling point. Finally distilling to remove the impurity-containing siloxane complexes from the silicon source material.

Abstract: A process is disclosed for purification of silicon source material including trichlorosilane. First, the silicon source material in liquid state with impurities vapor and the other chlorosilane or silane are passing a first high gravity rotating packed bed with spongy metal, at a temperature lower than the boiling point of the silicon source material, the impurities vapor and the other chlorosilane or silane are separated from the liquid silicon source material; second, the silicon source material in liquid state is fed to a second high gravity rotating packed bed, oxygen is also fed to the second high gravity rotating packed bed to form impurity containing siloxane complexes with higher boiling point. Finally distilling to remove the impurity containing siloxane complexes from the silicon source material.