Patents by Inventor Yi-Hsiang Chen

Yi-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240139251
    Abstract: Disclosed herein are methods of producing tumor antigen-specific T cells and uses thereof. In the present method, peripheral blood mononuclear cells (PBMCs) isolated from a subject are cultivated with bi-specific antibodies (BsAbs) in a culture medium so as to produce the tumor antigen-specific T cells from the PBMCs. Also provided in the present disclosure are tumor antigen-specific T cells produced by the present method, and uses thereof in treating subjects suffering from cancers.
    Type: Application
    Filed: December 16, 2023
    Publication date: May 2, 2024
    Inventors: Kuo-Hsiang Chuang, Yi-Jou Chen, Michael Chen
  • Publication number: 20240139261
    Abstract: Provided is a composition for improving gut microbiota, including: a bacterial species combination consisting of Limosilactobacillus fermentum TCI275 with an accession number of BCRC 910940, Bifidobacterium animalis subsp. lactis TCI604 with an accession number of BCRC 910887, and Weizmannia coagulans TCI803 with an accession number of BCRC 910946. Provided is a method for improving gut microbiota of a subject in need thereof with the bacterial species combination.
    Type: Application
    Filed: October 31, 2022
    Publication date: May 2, 2024
    Inventors: YUNG-HSIANG LIN, CHU-HAN HUANG, YI-LIN CHEN
  • Publication number: 20240132496
    Abstract: An ionic compound, an absorbent and an absorption device are provided. The ionic compound has a structure represented by Formula (I): ABn, ??Formula (I) wherein A is B is R1, R2, R3, R4, R5, and R6 are independently H, C1-6 alkyl group; and n is 1 or 2.
    Type: Application
    Filed: June 9, 2023
    Publication date: April 25, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Wei-Chih LEE, Yi-Hsiang CHEN, Chih-Hao CHEN, Ai-Yu LIOU, Jyi-Ching PERNG, Jiun-Jen CHEN
  • Patent number: 11955460
    Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
  • Patent number: 11947634
    Abstract: An image object classification method and system are disclosed. The method is executed by a processor coupled to a memory. The method includes: providing an image file including at least one image object, performing a process of extracting multiple binary-classified characteristics on the image object to obtain a plurality of first results independent of each other in categories, combining the plurality of first results in a manner of dimensionality reduction based on concatenation, performing a process of characteristics abstraction on the combined first results to obtain a second result, and performing a process of characteristics integration on the plurality of first results and the second result in a manner of dot product of matrices to obtain a classification result.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: April 2, 2024
    Assignee: Footprintku Inc.
    Inventors: Yan-Jhih Wang, Kuan-Hsiang Tseng, Jun-Qiang Wei, Shih-Feng Huang, Tzung-Pei Hong, Yi-Ting Chen
  • Publication number: 20240105619
    Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Inventors: Fong-Yuan Chang, Noor Mohamed Ettuveettil, Po-Hsiang Huang, Sen-Bor Jan, Ming-Fa Chen, Chin-Chou Liu, Yi-Kan Cheng
  • Publication number: 20240097038
    Abstract: A semiconductor device, including a substrate, a first source/drain region, a second source/drain region, and a gate structure, is provided. The substrate has an extra body portion and a fin protruding from a top surface of the substrate, wherein the fin spans the extra body portion. The first source/drain region and the second source/drain region are in the fin. The gate structure spans the fin, is located above the extra body portion, and is located between the first source/drain region and the second source/drain region.
    Type: Application
    Filed: October 13, 2022
    Publication date: March 21, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Yi Chuen Eng, Tzu-Feng Chang, Teng-Chuan Hu, Yi-Wen Chen, Yu-Hsiang Lin
  • Patent number: 11923302
    Abstract: Semiconductor devices and methods of manufacture are provided wherein a metallization layer is located over a substrate, and a power grid line is located within the metallization layer. A signal pad is located within the metallization layer and the signal pad is surrounded by the power grid line. A signal external connection is electrically connected to the signal pad.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fong-Yuan Chang, Noor Mohamed Ettuveettil, Po-Hsiang Huang, Sen-Bor Jan, Ming-Fa Chen, Chin-Chou Liu, Yi-Kan Cheng
  • Publication number: 20240071954
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20240071953
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Patent number: 11913025
    Abstract: Provided are methods of inducing differentiation and/or proliferation of T cells and uses thereof. In the present method, peripheral blood mononuclear cells (PBMCs) isolated from a subject are cultivated with bi-specific antibodies (BsAbs) in a culture medium so as to differentiate the PBMCs into the T cells. Each of the T cells has an anti-tumor antigen moiety and an anti-CD3 moiety on its surface. Also provided are methods and pharmaceutical kits for treating subjects suffering from cancers.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: February 27, 2024
    Assignee: Cytoarm Co., Ltd
    Inventors: Kuo-Hsiang Chuang, Yi-Jou Chen, Michael Chen
  • Patent number: 11818875
    Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: November 14, 2023
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Xiao Zhu, Yi-Hsiang Chen, Lihui Yang, Hung-I Lin, Yun-Chieh Mi, Jinfeng Gong
  • Publication number: 20220320104
    Abstract: A method for forming a memory includes: providing a substrate, a plurality of discrete bit line structures being located on the substrate, and an area surrounded by the adjacent bit line structures and the substrate and having a central axis; forming, on the substrate, a first conductive film filling an area between the adjacent bit line structures; etching the first conductive film by a first etching process to form a first conductive layer; forming a second conductive film on the top surface of the first conductive layer; and etching the second conductive film and the first conductive layer by a second etching process, the remaining second conductive film and the first conductive layer forming a capacitive contact window.
    Type: Application
    Filed: April 1, 2021
    Publication date: October 6, 2022
    Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Xiao ZHU, YI-HSIANG CHEN, Lihui YANG, HUNG-I LIN, Yun-Chieh MI, Jinfeng GONG
  • Patent number: 11246898
    Abstract: The present disclosure provides various cyanobacterial extracts exhibiting antiviral activity to a wide spectrum of viruses, such as enterovirus (EV), respiratory syncytial virus (RSV), Human Herpesvirus (HHV), Ebola virus, porcine epidemic diarrhea virus (PEDV), and porcine reproductive and respiratory syndrome virus (PRRSV). The cyanobacterial extract is prepared from biomass of A. maxima (or Spirulina maxima). Also disclosed herein are process for preparing the cyanobacterial extract and uses of the cyanobacterial extract.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: February 15, 2022
    Assignee: FAR EAST BIO-TEC CO., LTD.
    Inventors: Chuang-Chun Chiuh, Yi-Hsiang Chen, Gi-Kung Chang, Jing-Yun Chen, Ya-Chun Liao, Xin-Wen Huang, Shin-Ru Shih, Wei Chen
  • Patent number: 11194392
    Abstract: In a calibration process for an eye-tracking application, a calibration mark is displayed on an instrument, and the user is instructed to keep the gaze focused on the calibration mark. Next, a dynamic image is displayed on the instrument, and the user is instructed to move his head or the instrument as indicated by the dynamic image while keeping the gaze focused on the calibration mark. The ocular information of the user is recorded during the head movement or the instrument movement for calibrating the eye-tracking application.
    Type: Grant
    Filed: January 1, 2020
    Date of Patent: December 7, 2021
    Assignee: Ganzin Technology, Inc.
    Inventors: Kuan-Ling Liu, Liang Fang, Po-Jung Chiu, Yi-Heng Wu, Ming-Yi Tai, Yi-Hsiang Chen, Chia-Ming Chang, Shao-Yi Chien
  • Publication number: 20200276251
    Abstract: Disclosed herein is the use a cyanobacterial biomass for treating hepatitis B virus (HBV) infection, in particular, chronic HBV infection. According to various embodiments of the present disclosure, the cyanobacterial biomass, upon administration of at least one month, significantly reduces the level of the surface antigen of hepatitis B virus (HBsAg) detectable in the subject receiving the treatment and/or mitigates insomnia associated with chronic HBV infection.
    Type: Application
    Filed: May 15, 2020
    Publication date: September 3, 2020
    Inventors: Chuang-Chun CHIUH, Yi-Hsiang CHEN, Ming-Shun WU, Chun-Wei CHEH
  • Publication number: 20200218345
    Abstract: In a calibration process for an eye-tracking application, a calibration mark is displayed on an instrument, and the user is instructed to keep the gaze focused on the calibration mark. Next, a dynamic image is displayed on the instrument, and the user is instructed to move his head or the instrument as indicated by the dynamic image while keeping the gaze focused on the calibration mark. The ocular information of the user is recorded during the head movement or the instrument movement for calibrating the eye-tracking application.
    Type: Application
    Filed: January 1, 2020
    Publication date: July 9, 2020
    Inventors: Kuan-Ling Liu, LIANG FANG, Po-Jung Chiu, Yi-Heng Wu, Ming-Yi Tai, Yi-Hsiang Chen, Chia-Ming Chang, Shao-Yi Chien
  • Publication number: 20200197458
    Abstract: The present disclosure provides various cyanobacterial extracts exhibiting antiviral activity to a wide spectrum of viruses, such as enterovirus (EV), respiratory syncytial virus (RSV), Human Herpesvirus (HHV), Ebola virus, porcine epidemic diarrhea virus (PEDV), and porcine reproductive and respiratory syndrome virus (PRRSV). The cyanobacterial extract is prepared from biomass of A. maxima (or Spirulina maxima). Also disclosed herein are process for preparing the cyanobacterial extract and uses of the cyanobacterial extract.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 25, 2020
    Inventors: Chuang-Chun CHIUH, Yi-Hsiang CHEN, Gi-Kung CHANG, Jing-Yun CHEN, Ya-Chun LIAO, Xin-Wen HUANG, Shin-Ru SHIH, Wei CHEN
  • Publication number: 20200126824
    Abstract: A super thin heating disk includes an upper cover made of metal, the upper cover being formed with a receiving groove; a lower cover made of metal and installed within the receiving groove; the heating coil being distributed in the receiving groove; a heating coil installed within the receiving groove, two ends of the heating coil being installed with two electrodes, respectively, which are connected to external positive and negative electrodes for current conduction; a thermal couple installed in the receiving groove for detecting temperatures of the heating coil; the thermal couple being connected to two connection wires for conducting external transmission lines so that detection temperature data can be transferred out; and two insulation layers installed in the receiving groove and at an upper and a lower side of the heating coil.
    Type: Application
    Filed: October 17, 2018
    Publication date: April 23, 2020
    Inventors: Kuo Yang Ma, Mu-Chun Ho, Wei-Chuan Chou, Pei-Shan Li, Yi Hsiang Chen, Cheng Feng Li
  • Publication number: 20190378812
    Abstract: A device for producing semiconductor bump metal layer includes a front end transfer module including a normal pressure transfer chamber, a base material carrier, a heating and carrying interlock vacuum chamber, and a cooling interlock vacuum chamber; a pre-cooking device for receiving the plurality of base materials, forming high vacuum, and baking the base materials; a rear end cleaning sputtering module for receiving the plurality of base materials and cleaning the plurality of base materials and sputtering metal layers; then the plurality of base materials being transferred to the cooling interlock vacuum chamber. The robot in the normal pressure transfer chamber transfers the base materials to the pre-cooking device so as to bake the base materials in high vacuum to remove vapors in the plurality of base materials; then the base materials are transferred to the heating and carrying interlock vacuum chamber for baking again to a predetermined level.
    Type: Application
    Filed: June 10, 2018
    Publication date: December 12, 2019
    Inventors: Yu-Hung Huang, Ying Hsien Chen, Hsin Yu Yao, Wei Liang Chan, Kuei Chang Peng, Nai Wei Yu, Yi Hsiang Chen