Patents by Inventor Yi-Hsiang Chen

Yi-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250093974
    Abstract: An ultrasonic mouse includes an ultrasonic module, a processing unit, and a transmission interface. The ultrasonic module includes an ultrasonic emitting element and a plurality of ultrasonic receiving elements, the ultrasonic receiving elements and the ultrasonic emitting element are arranged in a matrix, and the ultrasonic receiving elements are arranged surrounding the ultrasonic emitting element. The ultrasonic emitting element generates an ultrasonic signal. When the ultrasonic mouse moves, at least one of the ultrasonic receiving elements generates sensing information upon receiving the ultrasonic signal. The processing unit is electrically connected to the ultrasonic module, receives the sensing information, and calculates and generates a movement signal. The transmission interface is electrically connected to the processing unit, and transmits the movement signal out.
    Type: Application
    Filed: December 4, 2023
    Publication date: March 20, 2025
    Inventors: Yi-Hsiang Chiu, Rei Jinchi, Hsien-Tsong Chen
  • Patent number: 12254824
    Abstract: A pixel circuit includes a driving transistor, a storage capacitor, a first transistor, a second transistor, a third transistor and a fourth transistor. A first end of the driving transistor is electrically coupled to a system high voltage terminal. The driving transistor is configured to control a driving current supplied to a light emitting element. A first end of the storage capacitor is electrically coupled to a control end of the driving transistor. A first end of the first transistor is electrically coupled to a second end of the storage capacitor, and a second end of the first transistor is configured to receive a data signal. When the first transistor is turned on according to the first control signal, the storage capacitor resets a voltage at the control end of the driving transistor, by a capacitive coupling effect, according to a change in voltage of the data signal.
    Type: Grant
    Filed: December 18, 2023
    Date of Patent: March 18, 2025
    Assignee: AUO CORPORATION
    Inventors: Ying-Chieh Chen, Yi-Fu Ou, Yung-Hsiang Lan
  • Patent number: 12251409
    Abstract: Disclosed herein is the use a cyanobacterial biomass for treating hepatitis B virus (HBV) infection, in particular, chronic HBV infection. According to various embodiments of the present disclosure, the cyanobacterial biomass, upon administration of at least one month, significantly reduces the level of the surface antigen of hepatitis B virus (HBsAg) detectable in the subject receiving the treatment and/or mitigates insomnia associated with chronic HBV infection.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: March 18, 2025
    Assignee: FAR EAST BIO-TEC CO., LTD.
    Inventors: Chuang-Chun Chiuh, Yi-Hsiang Chen, Ming-Shun Wu, Chun-Wei Cheh
  • Patent number: 12249737
    Abstract: A lithium battery cell includes an upper cover module, a first battery electrode group, a second battery electrode group, and a plurality of first electrode connection straps. The first electrode connection straps are stacked together and have the same width and length. A first end of the first electrode connection straps is welded to a first tab, a second end of the first electrode connection straps is welded to a second tab, and a middle part of the first electrode connection straps is welded to a first electrode terminal. An even number of first bending parts are formed between the middle part and the first end, and an even number of second bending parts are formed between the middle part and the second end, and the first bending parts and the second bending parts are symmetrical to each other. Furthermore, a lithium battery cell manufacturing method is also disclosed therein.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: March 11, 2025
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Cheng-Huang Chen, Yi-Hsiang Chan, Shu-Lin Chen, Wei-En Hsu
  • Publication number: 20250076494
    Abstract: A proximity ultrasonic sensing apparatus includes a microprocessor and an ultrasonic sensing assembly. The microprocessor generates a control signal. The ultrasonic sensing assembly includes a boost circuit to boost the control signal into a driving signal, an ultrasonic transmitting module to generates and sends an ultrasonic signal according to the driving signal, an ultrasonic receiving module to converts reflection of the ultrasonic signal into a reflection signal, and an amplifying circuit to amplifies the reflection signal into a sensing signal. A transmitting/receiving angle of the ultrasonic transmitting module and the ultrasonic receiving module is in a range of 2 to 10 degrees. The microprocessor generates a sensing result according to the sensing signal. A frequency of the ultrasonic signal is in a range of 500 KHz to 1.2 MHz. A sensing distance of the ultrasonic sensing assembly is in a range of 0.2 to 8 centimeters.
    Type: Application
    Filed: December 20, 2023
    Publication date: March 6, 2025
    Inventors: Yi-Hsiang Chiu, Rei Jinchi, Hsien-Tsong Chen
  • Publication number: 20250081857
    Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 6, 2025
    Applicant: National Tsing Hua University
    Inventors: Chih-Huang Lai, Tsung-Yu Pan, Chih-Hsiang Tseng, Yi-Cheng Tsou, Yu-Shen Yen, Rong-Zhi Chen
  • Patent number: 12235614
    Abstract: The present disclosure provides a molding system for fabricating a FRP composite article. The molding system includes a detector, a resin dispenser, a processing module, and a molding machine. The detector is configured to capture a graph of a woven fiber from a top view. The resin dispenser is configured to provide a resin to the woven fiber to form a FRP. The processing module is configured to receive the graph and a plurality of parameters of the FRP. The processing module includes a CNN model, and is configured to use the CNN model to obtain a plurality of predicted mechanical properties of the FRP according to the graph and the plurality of parameters of the FRP. The molding machine is configured to mold the FRP to fabricate the FRP composite article according to the plurality of predicted mechanical properties.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: February 25, 2025
    Assignee: CORETECH SYSTEM CO., LTD.
    Inventors: Chi-Hua Yu, Mao-Ken Hsu, Yi-Wen Chen, Li-Hsuan Shen, Chih-Chung Hsu, Chia-Hsiang Hsu, Rong-Yeu Chang
  • Publication number: 20250063824
    Abstract: This disclosure is directed to a circuit that includes a substrate, a target device on the substrate, and an electrostatic discharge (ESD) device electrically coupled to the target device. The ESD device includes an ESD detection circuit electrically coupled to a first reference voltage supply and a second reference voltage supply, an inverter circuit electrically coupled to the ESD detection circuit and configured to trigger in response to an ESD event on the first or second reference voltage supply, a rectifier circuit electrically coupled to the inverter circuit and configured to rectify a current discharged from the inverter circuit, and a transistor electrically coupled to the rectifier circuit and configured to discharge a remaining current passing through the rectifier circuit.
    Type: Application
    Filed: August 16, 2023
    Publication date: February 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lin-Yu HUANG, Shih-Fan CHEN, Sheng-Fu HSU, Yi-An LAI, Chan-Hong CHERN, Cheng-Hsiang HSIEH
  • Publication number: 20250061842
    Abstract: A display device includes a pixel circuit and a stage of a scan driver. The stage of the scan driver is electrically coupled to the pixel circuit. The stage of the scan driver is configured to output a first scan signal and a second scan signal to the pixel circuit. A first enable voltage of the first scan signal is at a first logic level, and a first disable voltage of the first scan signal is at a second logic level. A second enable voltage of the second scan signal is at the second logic level.
    Type: Application
    Filed: July 15, 2024
    Publication date: February 20, 2025
    Inventors: Sing-Ru LIN, Yi-Chien CHEN, Hui-Yuan WANG, Yow-Shiuan JENG, Yung-Hsiang LAN
  • Patent number: 12230744
    Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,
    Type: Grant
    Filed: September 20, 2023
    Date of Patent: February 18, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Chao-Hsing Chen, Cheng-Lin Lu, Chih-Hao Chen, Chi-Shiang Hsu, I-Lun Ma, Meng-Hsiang Hong, Hsin-Ying Wang, Kuo-Ching Hung, Yi-Hung Lin
  • Patent number: 12230740
    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: February 18, 2025
    Assignee: EPISTAR CORPORATION
    Inventors: Jhih-Yong Yang, Hsin-Ying Wang, De-Shan Kuo, Chao-Hsing Chen, Yi-Hung Lin, Meng-Hsiang Hong, Kuo-Ching Hung, Cheng-Lin Lu
  • Patent number: 12224179
    Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
    Type: Grant
    Filed: March 15, 2023
    Date of Patent: February 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Sheng Lin, Chi-Jen Liu, Chi-Hsiang Shen, Te-Ming Kung, Chun-Wei Hsu, Chia-Wei Ho, Yang-Chun Cheng, William Weilun Hong, Liang-Guang Chen, Kei-Wei Chen
  • Publication number: 20250044147
    Abstract: An ultrasonic sensing element assembly includes a semiconductor substrate and a plurality of ultrasonic sensing elements on the semiconductor substrate and arranged in an array. Each of the ultrasonic sensing elements is in a sensing region of the semiconductor substrate. Each of the ultrasonic sensing elements includes a first sensing module with a first sensing unit and a second sensing unit connected in parallel, a second sensing module with a third sensing unit and a fourth sensing unit connected in parallel, four connection pads, and four welding pads. Each of the connection pads is in a through hole passing through a first surface and a second surface of the sensing region. The four welding pads are on the second surface of the sensing region and overlap vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit respectively.
    Type: Application
    Filed: October 2, 2023
    Publication date: February 6, 2025
    Inventors: Yi-Hsiang Chiu, Rei Jinchi, Hsien-Tsong Chen
  • Publication number: 20250044552
    Abstract: A photographing optical lens system includes five lens elements being, in order from an object side to an image side along an optical path, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. Each lens element has an object-side surface facing the object side and an image-side surface facing the image side. The first lens element has positive refractive power and the object-side surface being convex in a paraxial region thereof. The image-side surface of the third lens element is convex in a paraxial region thereof. The object-side surface of the fourth lens element is convex in a paraxial region thereof. The fifth lens element has negative refractive power, the object-side surface being convex, and the image-side surface being concave in a paraxial region thereof.
    Type: Application
    Filed: October 23, 2024
    Publication date: February 6, 2025
    Inventors: YI-HSIANG CHUANG, WEI-YU CHEN
  • Publication number: 20250046961
    Abstract: A lithium battery cell includes an upper cover module, a first battery electrode group, a second battery electrode group, and a plurality of first electrode connection straps. The first electrode connection straps are stacked together. A first end of the first electrode connection straps is welded to a first tab, a second end of the first electrode connection straps is welded to a second tab, and a middle part of the first electrode connection straps is welded to a first electrode terminal. An even number of first bending parts are formed between the middle part and the first end, and an even number of second bending parts are formed between the middle part and the second end, and the first bending parts and the second bending parts are symmetrical to each other. A lithium battery cell manufacturing method is also disclosed therein.
    Type: Application
    Filed: October 25, 2024
    Publication date: February 6, 2025
    Inventors: Cheng-Huang CHEN, Yi-Hsiang CHAN, Shu-Lin CHEN, Wei-En HSU
  • Patent number: 12218082
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Grant
    Filed: November 9, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20250040213
    Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: January 30, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Yi-Hsiang Chao, Peng-Hao Hsu, Yu-Shiuan Wang, Chi-Yuan Chen, Yu-Hsiang Liao, Chun-Hsien Huang, Hung-Chang Hsu, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20250029910
    Abstract: An electronic component includes a first electronic unit including a plurality of pads, a first conductive layer, a second conductive layer, a first insulating layer having a first thickness, a second insulating layer having a second thickness, a second electronic unit, and a solder ball. The first conductive layer is disposed between the first electronic unit and the second conductive layer, and electrically connected to at least one of the pads through a conductive via. The first insulating layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer is disposed between the first insulating layer and the second insulating layer. The first thickness is different from the second thickness. The second conductive layer is disposed between the first conductive layer and the second electronic unit. The second conductive layer is electrically connected to the second electronic unit through the solder ball.
    Type: Application
    Filed: October 8, 2024
    Publication date: January 23, 2025
    Applicant: Innolux Corporation
    Inventors: Yeong-E Chen, Yi-Hung Lin, Cheng-En Cheng, Wen-Hsiang Liao, Cheng-Chi Wang
  • Patent number: 12207451
    Abstract: A power converter is provided. The power converter includes a housing, a heat dissipation module, and a first circuit board. The housing forms a receiving space, wherein the housing includes a first housing port and a second housing port. The heat dissipation module is detachably connected to the housing, and disposed in the receiving space. The heat dissipation module includes an inner path that communicates the first housing port with the second housing port. Working fluid enters the inner path via the first housing port. The working fluid leaves the inner path via the second housing port. The first circuit board includes a first circuit board body and a first heat source, wherein the first heat source is disposed on the first circuit board body, and the first heat source is thermally connected to the inner path of the heat dissipation module.
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: January 21, 2025
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Sheng-Nan Tsai, Ying-Chung Chuang, Chia-Jung Liu, Yi-Wei Chen, Han-Yu Tai, Shao-Hsiang Lo
  • Publication number: 20250022405
    Abstract: A pixel circuit includes a driving transistor, a storage capacitor, a first transistor, a second transistor, a third transistor and a fourth transistor. A first end of the driving transistor is electrically coupled to a system high voltage terminal. The driving transistor is configured to control a driving current supplied to a light emitting element. A first end of the storage capacitor is electrically coupled to a control end of the driving transistor. A first end of the first transistor is electrically coupled to a second end of the storage capacitor, and a second end of the first transistor is configured to receive a data signal. When the first transistor is turned on according to the first control signal, the storage capacitor resets a voltage at the control end of the driving transistor, by a capacitive coupling effect, according to a change in voltage of the data signal.
    Type: Application
    Filed: December 18, 2023
    Publication date: January 16, 2025
    Inventors: Ying-Chieh CHEN, Yi-Fu OU, Yung-Hsiang LAN