Abstract: A transmission component assembly includes a transmission module, a short-range ultrasonic sensor, and a microprocessor. The transmission module includes a motor, a rotating shaft, and a gear wheel. The gear wheel includes a plurality of teeth with different lengths. Each of the teeth corresponds to a rotation angle of the rotating shaft. The motor drives the rotating shaft and the gear wheel to rotate. A sensing distance between the short-range ultrasonic sensor and the gear wheel is less than 8 centimeters. The short-range ultrasonic sensor generates an ultrasonic signal with a frequency greater than 500 KHz, and receives an ultrasonic reflection signal reflected by the gear wheel. A transmitting angle and a receiving angle of the short-range ultrasonic sensor are less than 10 degrees. The microprocessor calculates the rotation angle based on the sensing signal converted from the ultrasonic reflection signal, and transmits a driving signal to the motor.

Abstract: An ultrasonic mouse includes an ultrasonic module, a processing unit, and a transmission interface. The ultrasonic module includes an ultrasonic emitting element and a plurality of ultrasonic receiving elements, the ultrasonic receiving elements and the ultrasonic emitting element are arranged in a matrix, and the ultrasonic receiving elements are arranged surrounding the ultrasonic emitting element. The ultrasonic emitting element generates an ultrasonic signal. When the ultrasonic mouse moves, at least one of the ultrasonic receiving elements generates sensing information upon receiving the ultrasonic signal. The processing unit is electrically connected to the ultrasonic module, receives the sensing information, and calculates and generates a movement signal. The transmission interface is electrically connected to the processing unit, and transmits the movement signal out.

Abstract: A proximity ultrasonic sensing apparatus includes a microprocessor and an ultrasonic sensing assembly. The microprocessor generates a control signal. The ultrasonic sensing assembly includes a boost circuit to boost the control signal into a driving signal, an ultrasonic transmitting module to generates and sends an ultrasonic signal according to the driving signal, an ultrasonic receiving module to converts reflection of the ultrasonic signal into a reflection signal, and an amplifying circuit to amplifies the reflection signal into a sensing signal. A transmitting/receiving angle of the ultrasonic transmitting module and the ultrasonic receiving module is in a range of 2 to 10 degrees. The microprocessor generates a sensing result according to the sensing signal. A frequency of the ultrasonic signal is in a range of 500 KHz to 1.2 MHz. A sensing distance of the ultrasonic sensing assembly is in a range of 0.2 to 8 centimeters.

Abstract: An ultrasonic sensing element assembly includes a semiconductor substrate and a plurality of ultrasonic sensing elements on the semiconductor substrate and arranged in an array. Each of the ultrasonic sensing elements is in a sensing region of the semiconductor substrate. Each of the ultrasonic sensing elements includes a first sensing module with a first sensing unit and a second sensing unit connected in parallel, a second sensing module with a third sensing unit and a fourth sensing unit connected in parallel, four connection pads, and four welding pads. Each of the connection pads is in a through hole passing through a first surface and a second surface of the sensing region. The four welding pads are on the second surface of the sensing region and overlap vertical projections of the first sensing unit, the second sensing unit, the third sensing unit, and the fourth sensing unit respectively.

Abstract: A package structure of a piezoelectric micromachined ultrasonic transducer includes a silicon substrate, a first protective layer, a piezoelectric composite film, a first metal layer, a second metal layer, a first pad, a second pad and a second protective layer. The silicon substrate is provided with a first through hole and a second through hole. The first protective layer is provided with a groove, a first communication hole and a second communication hole. The piezoelectric composite film includes a first electrode layer and a second electrode layer respectively filling the first communication hole and the first through hole, and the second communication hole and the second through hole so as to be connected to the first metal layer and the second metal layer. A surface of the second protective layer away from the piezoelectric composite film is a flat surface.

Abstract: A piezoelectric micromachined ultrasonic transducer includes a silicon substrate, a first protective layer, a supporting pillar, a piezoelectric composite film and a second protective layer. The supporting pillar is in the cavity of the first protective layer, the non-supporting pillar regions in the cavity communicates with each other. The shortest distance between a wall of the first protective layer and the supporting pillar is a first distance. The piezoelectric composite film is provided with at least two communicating holes, and the communicating holes penetrate the piezoelectric composite film and are communicated with the cavity. The second protective layer fills the two communicating holes to close the cavity. The distance between the two communicating holes is greater than twice of the first distance, and a ratio of a height of the supporting pillar to the first distance is 1/70 to 1/200, and a width of the supporting pillar is 3-10 um.

Abstract: A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

Abstract: A manufacturing method of a wafer level ultrasonic device includes: forming a first piezoelectric material layer, a first electrode material layer, a second piezoelectric material layer, and a second electrode material layer in sequence on a substrate; removing parts of those layers to form an ultrasonic element including a first electrode and a second electrode; forming a first protective layer on the ultrasonic element, and forming a first through hole and a second through hole exposing a part of the first electrode and a part of the second electrode; forming a first conductive layer and a second conductive layer on the first protective layer and connecting to the first electrode and the second electrode; forming a second protective layer; and connecting a base with an opening and the second protective layer in a vacuum environment to form a closed cavity.

Abstract: A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

Abstract: A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Abstract: A suspended piezoelectric ultrasonic transducer includes a semiconductor substrate and a piezoelectric ultrasonic sensing element. The semiconductor substrate includes a columnar arrangement area, a peripheral wall, and one or more bridge portions. A cavity is between the columnar arrangement area and the peripheral wall. The cavity surrounds the columnar arrangement area, and the bridge portion is connected to the columnar arrangement area and the peripheral wall. The piezoelectric ultrasonic sensing element is disposed on the columnar arrangement area. Through providing the cavity and the bridge portion on the semiconductor substrate, the resonance frequency, the acoustic pressure, and the emitting angle of the transducer can be adjusted, thereby providing a greater manufacturing tolerance for the transducer.

Abstract: A wafer level ultrasonic chip module includes a substrate, a composite layer and a base material. The substrate has a through slot passing through an upper surface and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The composite layer has a groove passing through an upper surface and a lower surface of the protective layer, and communicating with the through slot. Rhe ultrasonic body corresponds to the through slot. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Abstract: An array-type ultrasonic sensor includes a semiconductor substrate, a first sensing array, and a second sensing array. The first sensing array includes a plurality of first ultrasonic sensing units. Each of the first ultrasonic sensing units includes a first positive electrode and a first negative electrode. The first positive electrodes are connected in series with each other, and the first negative electrodes are connected in series with each other. The second sensing array includes a plurality of second ultrasonic sensing units. Each of the second ultrasonic sensing units includes a second positive electrode and a second negative electrode. The second positive electrodes are connected in series with each other, and the second negative electrodes are connected in series with each other. One of the first sensing array and the second sensing array is configured to transmit ultrasonic waves, and the other is configured to receive reflected ultrasonic waves.

Abstract: A wafer level ultrasonic chip module includes a substrate, a composite layer and a base material. The substrate has a through slot passing through an upper surface and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The composite layer has a groove passing through an upper surface and a lower surface of the protective layer, and communicating with the through slot. The ultrasonic body corresponds to the through slot. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Abstract: A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

Abstract: An array-type ultrasonic sensor includes a semiconductor substrate, a first sensing array, and a second sensing array. The first sensing array includes a plurality of first ultrasonic sensing units. Each of the first ultrasonic sensing units includes a first positive electrode and a first negative electrode. The first positive electrodes are connected in series with each other, and the first negative electrodes are connected in series with each other. The second sensing array includes a plurality of second ultrasonic sensing units. Each of the second ultrasonic sensing units includes a second positive electrode and a second negative electrode. The second positive electrodes are connected in series with each other, and the second negative electrodes are connected in series with each other. One of the first sensing array and the second sensing array is configured to transmit ultrasonic waves, and the other is configured to receive reflected ultrasonic waves.

Abstract: An integrated package method for MEMS element and ASIC chip includes forming a re-layout layer on a front surface of an ASIC wafer; coating an organic compound layer on the re-layout layer and applying a lithography process to the organic compound layer to from a microcavity array; aligning and bonding an electrode connection pad layer on a front surface of an MEMS element with the microcavity array to form a closed cavity structure; thinning and exposing a silicon substrate on a back surface of the MEMS element to a desired thickness; applying the lithographic process on the MEMS element to expose the electrode connection pad layer and an electrical contact area of the re-layout layer; and manufacturing a metal connection member connected to the electrode connection pad layer and the electrical contact area. An integrated package structure for MEMS element and ASIC chip is also provided.

Abstract: A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.

Abstract: A wafer level ultrasonic device includes a composite layer, a first conductive layer, a second conductive layer, a base, a first electrical connection region, and a second electrical connection region. The composite layer includes an ultrasonic element and a protective layer. The ultrasonic element includes a first electrode and a second electrode. The protective layer has a first connecting channel and a second connecting channel respectively corresponding to the first electrode and the second electrode. The first conductive layer and the second conductive layer are respectively in the first connecting channel and the second connecting channel to connect the first electrode and the second electrode. The base includes an opening forming a closed cavity with the protective layer. The first electrical connection region and the second electrical connection region are respectively filled with metal materials to electrically connect the first conductive layer and the second conductive layer.

Abstract: A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.