Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) includes at least a spin current source alloy layer, a ferromagnetic free layer, and an insulation layer. The spin current source alloy layer is a nickel-tungsten alloy layer. The ferromagnetic free layer is located on the spin current source alloy layer. The insulation layer is located on the ferromagnetic free layer. Since the nickel-tungsten alloy layer has favorable perpendicular magnetic anisotropic and can maintain a high spin Hall angle, it is suitable as a spin current source for the SOT MRAM.

Abstract: An improved heat dissipation module for BGA IC's is a thin metal module used for heat dissipation in an encapsulated IC device. It has an annular base with several supports extending from its inner rim upwards to support a top plate. At least one protruding annular ring is provided on the top surface of the top plate. This design can ensure the top plate and a mold match during the capsulation process, avoid the glue overflow problem, and increase its total dissipation area to facilitate heat dissipation.

Abstract: An improved heat dissipation module for BGA IC's is a thin metal module used for heat dissipation in an encapsulated IC device. It has an annular base with several supports extending from its inner rim upwards to support a top plate. At least one protruding annular ring is provided on the top surface of the top plate. This design can ensure the the top plate and a mold match during the capsulation process, avoid the glue overflow problem, and increase its total dissipation area to facilitate heat dissipation.

Abstract: A lead frame for a semiconductor package. The lead frame includes a die pad and a plurality of leads. One surface of the die pad supports a silicon chip while the other surface has a plurality of annular grooves all having the same geometric center. The inner lead portion of the leads surrounds the die pad, but the die pad and the leads are on different planar surfaces.