Abstract: A circuit for parameter PSRR measurement includes a filter, a first regulator and a second regulator. The filter may be configured for receiving an AC input signal and a DC input signal, and for outputting a combined output signal according to the AC input signal and the DC input signal. The first regulator may be configured for receiving the combined output signal, and for outputting a first output signal having a first AC component signal and a first DC component signal. The second regulator may be configured for receiving the first output signal, and for outputting a second output signal having a second AC component signal and a second DC component signal. A parameter PSRR of the second regulator may be obtained according to a ratio between the second AC component signal and the first AC component signal.

Abstract: The present disclosure provides a low drop-out (LDO) circuit. The LDO circuit includes an input terminal, an output terminal, a cascode operational amplifier, and a power stage. The cascode operational amplifier is electrically connected to the input terminal. The power stage has a first terminal electrically connected to the input terminal, a second terminal electrically connected to an output node of the cascode operational amplifier, and a third terminal electrically connected to the output terminal.

Abstract: A overload protection switch with a reverse restart switching structure that has a seesaw lampshade provided with a protruding block which extending downward from the outside of the seesaw lampshade to ensure that the seesaw lampshade and the moving rod are accurately positioned in the ON and OFF positions in the housing to form a three-stage switching type with bidirectional positioning and forms an overload protection switch that can continuously maintain sufficient insulation distance and does not reduce the insulation distance due to fatigue decay of the binary alloy conductive plate.

Abstract: The present disclosure provides a low dropout (LDO) circuit. The LDO circuit includes an input terminal, an output terminal, a cascode operational amplifier, and a power stage. The cascode operational amplifier is electrically connected to the input terminal. The power stage has a first terminal electrically connected to the input terminal, a second terminal electrically connected to an output node of the cascode operational amplifier, and a third terminal electrically connected to the output terminal.

Abstract: An integrated circuit includes a first conducting line and a second conducting line in a first metal layer above a first transistor and a second transistor. The first conducting line and the second conducting line, which are parallel and adjacent to each other, form a metal-insulator-metal capacitor. Each of the first transistor and the second transistor forms a metal-insulator-semiconductor capacitor. The circuit also includes a third conducting line connected to a source and a drain of the first transistor and configured to receive a first reference voltage. The circuit still includes a fourth conducting line connected to a source and a drain of the second transistor and configured to receive a second reference voltage.

Abstract: A manufacture method of a concave disc-shaped structure of bimetal strip, particularly to one that is a coaxial positioning method of the guide hole which having elastic disc-shape structure bimetal strips not affected by external stress, which having a bimetal structure which outer edge will not be damaged and does not affect by stress while inner edge pulling closed to the outer edge, it includes: a bimetal strip, a lug, and an assembling jig, having two displaceable positioning holes, and use the guiding surface to make the two positioning holes gradually turn inside to condense to the combining surface of the lugs, so as to achieve the purpose of accurate positioning and combination.

Abstract: A method includes fabricating a first transistor and a second transistor on a substrate and fabricating a first conducting line and a second conducting line in a first metal layer. The method also includes connecting a gate of the first transistor to the first conducting line and connecting a gate of the second transistor to the second conducting line. The first conducting line and the second conducting line are parallel and adjacent to each other in the first metal layer above the first transistor and the second transistor. The method still includes connecting a source and a drain of the first transistor to a third conducting line.

Abstract: A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.

Abstract: A light detecting device includes a substrate that has a lattice constant. A buffer layer is disposed on the substrate. A gradient layer is formed on the buffer layer opposite to the substrate, and includes a plurality of sublayers that have respectively lattice constants each of which is greater than the lattice constant of the substrate. The sublayers are arranged in a manner that the lattice constants of the sublayers undergo a gradual increase in lattice constant in a direction away from the substrate. A barrier layer is formed on the gradient layer opposite to the buffer layer, and has a lattice constant which is greater than that of the substrate and no smaller than the lattice constants of the sublayers. An absorption layer is formed on the barrier layer opposite to the gradient layer.

Abstract: A overload protection switch with a reverse restart switching structure that has a seesaw lampshade provided with a protruding block which extending downward from the outside of the seesaw lampshade to ensure that the seesaw lampshade and the moving rod are accurately positioned in the ON and OFF positions in the housing to form a three-stage switching type with bidirectional positioning and forms an overload protection switch that can continuously maintain sufficient insulation distance and does not reduce the insulation distance due to fatigue decay of the binary alloy conductive plate.

Abstract: A circuit for parameter PSRR measurement includes a filter, a first regulator and a second regulator. The filter may be configured for receiving an AC input signal and a DC input signal, and for outputting a combined output signal according to the AC input signal and the DC input signal. The first regulator may be configured for receiving the combined output signal, and for outputting a first output signal having a first AC component signal and a first DC component signal. The second regulator may be configured for receiving the first output signal, and for outputting a second output signal having a second AC component signal and a second DC component signal. A parameter PSRR of the second regulator may be obtained according to a ratio between the second AC component signal and the first AC component signal.

Abstract: A circuit for parameter PSRR measurement includes a filter, a first regulator and a second regulator. The filter may be configured for receiving an AC input signal and a DC input signal, and for outputting a combined output signal according to the AC input signal and the DC input signal. The first regulator may be configured for receiving the combined output signal, and for outputting a first output signal having a first AC component signal and a first DC component signal. The second regulator may be configured for receiving the first output signal, and for outputting a second output signal having a second AC component signal and a second DC component signal. A parameter PSRR of the second regulator may be obtained according to a ratio between the second AC component signal and the first AC component signal.

Abstract: A device is provided. The device includes an operational amplifier, an output circuit, a first capacitor, and a second capacitor. The operational amplifier is configured to generate an output according to a feedback signal. The output circuit is configured to generate a first current signal in response to a supply voltage and the output of the operational amplifier. The first current signal includes a first ripple signal. The first capacitor and the second capacitor are coupled in parallel between the operational amplifier and the output circuit. The first capacitor is configured to receive the first current signal and feedback to the operational amplifier the first ripple signal.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a metal oxide semiconductor (MOS) transistor including a first gate and first and second source/drain (S/D) regions, the first and second S/D regions having a first doping type and being formed in a substrate region having a second doping type different from the first doping type, forming a guard ring structure surrounding the MOS transistor, the guard ring structure including a second gate and first and second heavily doped regions, the first and second heavily doped regions being formed in the substrate region and having the second doping type, and constructing a first electrical connection between the first and second gates.

Abstract: The present disclosure provides a low dropout (LDO) circuit. The LDO circuit includes an input terminal, an output terminal, a cascode operational amplifier, and a power stage. The cascode operational amplifier is electrically connected to the input terminal. The power stage has a first terminal electrically connected to the input terminal, a second terminal electrically connected to an output node of the cascode operational amplifier, and a third terminal electrically connected to the output terminal.

Abstract: A method includes fabricating a first transistor and a second transistor on a substrate and fabricating a first conducting line and a second conducting line in a first metal layer. The method also includes connecting a gate of the first transistor to the first conducting line and connecting a gate of the second transistor to the second conducting line. The first conducting line and the second conducting line are parallel and adjacent to each other in the first metal layer above the first transistor and the second transistor. The method still includes connecting a source and a drain of the first transistor to a third conducting line.

Abstract: A method (of decoupling from voltage variations in a first voltage drop between first and second reference voltage rails) includes: electrically coupling one or more components to form a decoupling capacitance (decap) circuit; electrically coupling one or more components to form a filtered biasing circuit; and making an unswitched series electrical coupling of the decap circuit and the filtered biasing circuit between the first and second reference voltage rails.

Abstract: A non-diffusion type photodiode is described and has: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micrometer. The non-diffusion type photodiode can reduce generation of dark current.

Abstract: A method of biasing a guard ring structure includes biasing a gate of a MOS transistor to a first bias voltage level, biasing first and second S/D regions of the MOS transistor to a power domain voltage level, biasing a gate of the guard ring structure to a second bias voltage level, and biasing first and second heavily doped regions of the guard ring structure to the power domain voltage level. Each of the first and second S/D regions has a first doping type, each of the first and second heavily doped regions has a second doping type different from the first doping type, and each of the first and second S/D regions and the first and second heavily doped regions is positioned in a substrate region having the second doping type.