Abstract: An electronic device includes a body having a front compartment and a rear compartment, at least one heat source, a circuit board, at least one first fan, and at least one second fan. The rear compartment extends from and is higher than the front compartment. The heat source, the circuit board, and the first fan are disposed within the front compartment. The first fan has first and second air outlets facing different directions. The circuit board, the first fan, and the body form an air chamber space communicated with an external environment through a first opening of the rear compartment and in which the heat source is located. The first fan provides a first airflow via the first air outlet adjacently connected to and facing the air chamber space, and generates a second airflow via the second outlet facing at least one second opening of the rear compartment to be discharged from the body.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

Abstract: A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.

Abstract: Disclosed are a ketoreductase mutant and a method for producing a chiral alcohol. The ketoreductase mutant has an amino acid sequence obtained by the mutation of the amino acid sequence shown in SEQ ID NO: 1, and the mutation includes a mutation siteK200H. In the present disclosure, the mutant obtained by mutation takes a ketone compound as a raw material, the chiral alcohol may be efficiently produced by stereoselective reduction, and the stability is greatly improved, which is suitable for popularization and application to the industrial production of the chiral alcohol.

Abstract: A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A semiconductor device is provided, which includes a base, a semiconductor structure and a conductive reflective structure. The base has a first surface and a second surface opposite to the first surface. The semiconductor structure is located on the first surface. The conductive reflective structure is located on the second surface and includes a metal oxide structure and a metal structure. The metal oxide structure is located between the metal structure and the base. The metal oxide structure physically contacts the second surface.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A semiconductor device and a package structure are provided. The semiconductor device includes a substrate, a light-emitting structure, a first semiconductor layer, a second semiconductor layer and a first electrode. The light-emitting structure is on the substrate. The first semiconductor layer is on the light-emitting structure. The second semiconductor layer is between the first semiconductor layer and the light-emitting structure. The first electrode is on the second semiconductor layer. At least a portion of the first electrode is separated from the first semiconductor layer.

Abstract: A semiconductor structure includes a carrier having a surface, a supporting element, a semiconductor stack and a bridge layer. The supporting element is on the surface. The semiconductor stack is on the surface and has a side surface. The bridge layer includes a first portion connecting to the supporting element, a second portion, and a third portion connecting to the semiconductor stack. The second portion is extended from the third portion toward the first portion and is protruded from the side surface.

Abstract: Formic acid or derivatives thereof are produced from non-toxic carbon dioxide in the supercritical state, using it as raw materials, without using solvents, and at a high efficiency owing to a high reaction velocity, by reacting said carbon dioxide and an active hydrogen group-containing compound.

Abstract: Formic acid or derivatives thereof are produced from non-toxic carbon dioxide in the supercritical state, using it as raw materials, without using solvents, and at a high efficiency owing to a high reaction velocity, by reacting said carbon dioxide and an active hydrogen group-containing compound.