Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: Provided are a noise cancellation method and apparatus, an electronic device, a noise cancellation earphone, and a storage medium. The method includes acquiring original sound source information; performing noise reduction (NR) processing on the original sound source information using active noise cancellation (ANC) to obtain first sound information and performing the NR processing on the original sound source information using environmental noise cancellation (ENC) to obtain second sound information; and mixing and adding the first sound information and the second sound information to obtain target sound information and playing the target sound information. In this method, the NR processing can be performed on the sound using the ANC and the ENC, thereby distinguishing environmental noise from human voice, improving the noise cancellation performance, and enabling a user to hear clearer sound.

Abstract: The present invention relates to an organic semiconducting compound and organic optoelectronic components using the same. The organic semiconducting compound own a novel chemical structure. By using the organic semiconducting compound to prepare organic optoelectronic compounds, environmentally friendly non-halogen solvent can be used. In addition, the photoresponsivity and detectivity are excellent in the near-infrared region.

Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.

Abstract: An organic semiconductor mixture and an organic optoelectronic device containing the same are provided. A n-type organic semiconductor compound in the organic semiconductor mixture has a novel chemical structure so that the mixture has good thermal stability and property difference during batch production is also minimized. The organic semiconductor mixture is applied to organic optoelectronic devices such as organic photovoltaic devices for providing good energy conversion efficiency while in use.

Abstract: An imaging lens assembly module includes a lens carrier, a rotatable component, an imaging surface and a holder portion. At least one lens element of the imaging lens assembly module is disposed on the lens carrier, and the lens carrier includes an assembling structure. The rotatable component includes a blade set and a rotating element. The blade set includes rotatable blades surrounding an optical axis to form a through hole. The rotating element is connected to the blade set. The imaging surface is located on an image side of the lens carrier. The holder portion is configured to keep a fixed distance between the lens carrier and the imaging surface. The blade set and the rotating element are disposed on the assembling structure, and the blade set and the rotating element rotate relatively to the assembling structure, so that the dimension of the through hole is variable.

Abstract: An optical probe package structure is provided, used in a test environment for testing a plurality of optical chips on a wafer, including: a main body, an optical fiber, an optical fiber positioning area, a mode field conversion waveguide structure, and an optical waveguide. Wherein, the mode field conversion waveguide structure is used to convert the propagation field of the optical signal, and the optical signal transmitted by the mode field conversion waveguide structure enters the optical waveguide. The optical waveguide has an emitting end, and the emitting end is provided with a facet, the facet has a facet angle, and the facet angle makes the optical signal after field conversion mode field conversion to produce total reflection and output along a second direction. The optical signal after total reflection enters the optical chips. Thereby, an optical probe package structure that can test before wafer cutting and polishing is provided.

Abstract: A handwriting data processing method is applied to a pen display having wireless communication function and a data processing device. The handwriting data processing method includes the steps of: the data processing device obtaining a handwriting data from the pen display in a wireless communication manner; the data processing device generating a compressed screen image and transmitting the data of the compressed screen image and the handwriting data, which is not compressed, to the pen display in the wireless communication manner; the pen display uncompressing the data of the compressed screen image and overlapping the uncompressed screen image and the handwriting data to form a complete screen image and displaying the complete screen image. By the handwriting processing method, the machine time of the processor of the pen display is effectively lowered, significantly reducing the delay phenomenon of the displayed handwriting.

Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. An active layer material of the active layer comprises a near-infrared organic small molecule with vinyl groups which includes a structure of formula I: Wherein o and p are independently selected from any integer from 0 to 2, and o+p>0. Ar1 is an electron-withdrawing group with a unilateral fused ring structure. Ar2 is a monocyclic or polycyclic structure containing ketone and an electron-withdrawing group, and has a double bond to bond other groups. R1 is different from R2. The active layer material of the organic optoelectronic device comprises an organic small molecule with an asymmetric carbon chain, and has adjustable material solubility, arrangement and conductivity. The present invention also provides an active layer material comprising organic small molecules with asymmetric carbon chains and with symmetrical carbon chains independently, which improve production efficiency.

Abstract: A variable aperture module includes a blade assembly, a positioning element, a driving part and pressing structures. The blade assembly includes movable blades disposed around an optical axis to form a light passable hole with an adjustable size. Each movable blade has a positioning hole and a movement hole adjacent thereto. The positioning element includes positioning structures disposed respectively corresponding to the positioning holes. The driving part includes a rotation element disposed corresponding to the movement holes and is rotatable with respect to the positioning element. The pressing structures are disposed respectively corresponding to the movable blades. Each pressing structure is at least disposed into at least one of the positioning hole and the movement hole of the corresponding movable blade. Each pressing structure at least presses against at least one of the corresponding one positioning structure and the rotation element.

Abstract: An electronic device is provided. The electronic device includes a touch module, a motion sensor, a memory, and a control unit. The touch module is configured to generate a touch signal. The motion sensor is configured to detect motion of the electronic device to generate motion data. The memory stores a preset motion condition. The control unit is electrically connected to the touch module, the motion sensor, and the memory, and configured to: receive the motion data; and determine whether the motion data meets the preset motion condition or not, and generate a virtual touch signal when the motion data meets the preset motion condition. A control method applied to the electronic device is further provided.

Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: An organic semiconducting compound and an organic photoelectric component containing the same are provided. The organic semiconducting compound has a novel chemical structure to make the organic semiconducting compound have good response to the infrared light. The organic semiconducting compound can be applied to the organic photoelectric components such as organic photodetector (OPD), organic photovoltaic (OPV) cell, and organic field-effect transistor (OFET). Thus, the organic photoelectric components have better light absorption range and photoelectric response while in use.

Abstract: An alignment structure of optical element is provided, including: an optical fiber, having a parallel fiber segment and a plurality of bare fiber segments; a cover plate, provided with a plurality of side-by-side guide grooves and a plurality of first coupling parts, the bare fiber segments of the optical fiber being arranged in the corresponding guide grooves, cross-sectional shapes of the guide grooves being at least one of U-shaped or V-shaped; and a silicon chip, provided with lines and a plurality of second coupling parts; when the cover plate is matched with the silicon chip, the first coupling parts and the second coupling parts being coupled and positioned with each other respectively, and the optical fiber being fixed between the silicon chip and the cover plate. As such, precise positioning and rapid assembly are achieved.

Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.

Abstract: A handwriting data processing method is applied to a pen display having wireless communication function and a data processing device. The handwriting data processing method includes the steps of: the data processing device obtaining a handwriting data from the pen display in a wireless communication manner; the data processing device generating a compressed screen image and transmitting the data of the compressed screen image and the handwriting data, which is not compressed, to the pen display in the wireless communication manner; the pen display uncompressing the data of the compressed screen image and overlapping the uncompressed screen image and the handwriting data to form a complete screen image and displaying the complete screen image. By the handwriting processing method, the machine time of the processor of the pen display is effectively lowered, significantly reducing the delay phenomenon of the displayed handwriting.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H1, the light-receiving surface is separated from the topmost surface by a second distance H2, and H1 is different from H2.